Datasheet IRF7555 Datasheet (International Rectifier)

● Trench Technology

● Ultra Low On-Resistance

● Dual P-Channel MOSFET

● Very Small SOIC Package

● Low Profile (<1.1mm)

● Available in Tape & Reel

Description

New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

S1

G1

S2

G2

1

2

3

4

Top View

PD -91865B

IRF7555

HEXFET® Power MOSFET

8

7

6

5

D1

D2

Micro8

R

DS(on)

V

DSS

= -20V

= 0.055Ω

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A I

DM

PD @TA = 25°C Maximum Power Dissipation 1.25 W PD @TA = 70°C Maximum Power Dissipation 0.8 W

Linear Derating Factor 10 mW/°C

V

GS

E

AS

dv/dt Peak Diode Recovery dv/dt  1.1 V/ns TJ , T

STG

Soldering Temperature, for 10 seconds 240 (1.6mm from case)

Drain-Source Voltage -20 V

Pulsed Drain Current -34

Gate-to-Source Voltage ± 12 V

Single Pulse Avalanche Energy 36 mJ

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient  100 °C/W

www.irf.com 1

2/2/00

IRF7555

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.055 VGS = -4.5V, ID = -4.3A  ––– ––– 0.105 VGS = -2.5V, ID = -3.4A 

Ω

Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 2.5 ––– ––– S VDS = -10V, ID = -0.8A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 10 15 ID = -3.0A Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -10V Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -5.0V Turn-On Delay Time ––– 10 ––– VDD = -10V Rise Time ––– 46 ––– ID = -2.0A Turn-Off Delay Time ––– 60 ––– RG = 6.0Ω

ns

Fall Time ––– 64 ––– RD = 5.0Ω  Input Capacitance ––– 1066 ––– VGS = 0V Output Capacitance ––– 402 ––– pF VDS = -10V Reverse Transfer Capacitance ––– 126 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

-1.3

––– ––– -34

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V  Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -2.5A Reverse Recovery Charge ––– 41 61 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on FR-4 board, t

≤ 10sec.

max. junction temperature.

 I

≤ -2.0A, di/dt ≤ -140A/µs, V

SD

TJ ≤ 150°C

DD

≤ V

(BR)DSS

,

 Starting T

RG = 25Ω, I

= 25°C, L = 8.0mH

J

= -3.0A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF7555

100

10

1

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

100

J

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

BOTTOM

-1.50V

20µs PULSE WIDTH T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

-4.3A

°

T = 25 C

10

J

°

T = 150 C

J

1.5

1.0

(Normalized)

0.5

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 2.0 3.0 4.0 5.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

www.irf.com 3

IRF7555

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

15

-4.3A

I =

-4.5A

D

GS

12

9

6

3

V =-10V

DS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20 24

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

10

°

T = 150 C

J

°

T = 25 C

1

SD

-I , Reverse Drain Current (A)

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF7555

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000

100

TOP

80

60

40

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D

-1.3A

-2.4A

-3.0A

°

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7555

Package Outline



Micro8

 Outline



Dimensions are shown in millimeters (inches)

D

3

- B -

3

- A -

- C B 8 X

NOTES: 1 DIMENSION ING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSION S DO NOT INCLUDE MOLD FLASH.

8 7 6 5

E

1 2 3 4

e

6X

e 1

A

A 1

0.0 8 (.0 0 3 ) M C A S B S

H

0.2 5 (.0 1 0 ) M A M

0.10 (.004)

Part Marking Information

LEAD ASSIG NM ENTS

D D D D D1 D1 D2 D2

8 7 6 5

SIN GLE

1 2 3 4

S S S G

θ

8 7 6 5

DUAL

1 2 3 4

S1 G1 S2 G2

L

8X

IN CHE S M IL L IME T E R S

DIM

M IN M AX M IN M AX A .0 3 6 .0 4 4 0 .9 1 1 .1 1 A1 .0 0 4 .0 0 8 0 .1 0 0 .2 0 B .0 1 0 .0 1 4 0 .2 5 0 .3 6 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 BASIC 0.65 BASIC e1 .0128 BASIC 0 .33 BASIC E .1 1 6 .1 2 0 2 .9 5 3 .0 5 H .188 .198 4.78 5 .03 L .0 1 6 .0 2 6 0 .4 1 0 .6 6

0 ° 6° 0 ° 6 °

θ

RECOMMENDED FOOTPRINT

1.04 ( .0 41 )

C

8X

3.20 ( .1 26 )

0.38 ( .015 )

4.24 ( .167 )

0.65 ( .0256 )

8X

6X

5.28 ( .2 08 )

Micro8







EXAMP L E : TH IS IS AN IRF7 50 1

DATE CO DE (YW W) Y = LAST D IGIT OF YEAR W W = WEEK

451 7501

PART NUMBER

TOP

6 www.irf.com

A

Tape & Reel Information

Micro8

Dimensions are shown in millimeters (inches)







TERM INAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

IRF7555

8.1 ( .318 )

7.9 ( .312 )

NOT ES:

1. OUTLINE CONFOR MS T O E IA-481 & EIA-541.

2. CONTROLLING DIMENSION : MILLIMETER.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIM ENSION : MILLIMETER.

2. OU TL INE C O N F ORM S TO E IA-481 & E IA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

Data and specifications subject to change without notice. 2/2000

www.irf.com 7