Page 1
PD - 9.1268F
IRF7506
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
S1
G1
S2
G2
1
2
3
4
To p V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -1.7
@ TA = 70°C Continuous Drain Current, VGS @ -10V -1.4 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 1.25 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current -9.6
Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
8
7
6
5
D1
D1
D2
D2
MICRO8
V
R
DS(on)
DSS
= -30V
= 0.27Ω
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Maximum Junction-to-Ambient ––– 100
°C/W
8/25/97
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IRF7506
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.039 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.27 V
––– ––– 0.45 V
Ω
= -10V, ID = -1.2A
GS
= -4.5V, ID = -0.60A
GS
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 0.92 –– – –– – S VDS = -10V, ID = -0.60A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 20V
––– ––– -1.0 V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
µA
nA
= -24V, VGS = 0V
DS
= -20V
GS
Total Gate Charge ––– 7.5 11 ID = -1.2A
Gate-to-Source Charge ––– 1.3 1.9 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -10V, See Fig. 6 and 9
Turn-On Delay Time ––– 9.7 ––– VDD = -15V
Rise Time ––– 12 ––– ID = -1.2A
Turn-Off Delay Time ––– 19 ––– RG = 6.2Ω
ns
Fall Time ––– 9.3 ––– RD = 12Ω, See Fig. 10
Input Capacitance ––– 180 ––– VGS = 0V
Output Capacitance ––– 87 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 42 –– – ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
-1.25–––
A
-9.6
Diode Forward Voltage ––– – –– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
Reverse Recovery Time ––– 30 45 ns TJ = 25°C, IF = -1.2A
Reverse RecoveryCharge ––– 37 5 5 nC di/dt = -100A/µs
≤ -1.2A, di/dt ≤ -140A/µs, V
DD
≤ V
(BR)DSS
≤ 10sec.
, TJ ≤ 150°C
D
G
S
Page 3
IRF7506
10
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0V
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
20µs PULS E WI DTH
T = 25 °C
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
10
10
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0V
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
20µs PULS E WI DTH
T = 150°C
A
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = -1 .2 A
D
T = 25°C
J
T = 150°C
J
1
D
-I , Drain-to- So u rc e C u rr e n t (A)
0.1
3.0 4.0 5.0 6.0 7.0
-V , G ate-to - S ourc e V o l ta g e (V )
GS
V = -1 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e On R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em per atu re ( °C )
J
V = -10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRF7506
400
300
200
C, C apac itance (pF)
100
0
1 10 100
V = 0V , f = 1 MH z
GS
C = C + C , C S HORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rs s
-V , Drain -to-So urc e V oltag e (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
20
I = -1.2A
D
V = -24V
16
12
8
4
GS
DS
V = -15V
DS
-V , G ate- to-S ou rce V oltag e (V)
FOR TEST CIRCUIT
A
0
024681012
Q , Tota l Gate Ch arge (nC)
G
SEE FIGURE 9
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
O PE RAT ION IN T HIS A REA LIM ITED
BY R
DS(on)
T = 150°C
J
T = 25°C
1
SD
-I , Re verse D rain C urrent (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
-V , Source-to-Drain Voltage (V)
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
10
1
D
-I , Drain C urren t (A)
T = 2 5°C
A
T = 1 50°C
J
Single Pulse
A
0.1
1 10 100
-V , D rain- to-Sour c e Volt a ge (V)
DS
10µs
100µs
1ms
10ms
A
Fig 8. Maximum Safe Operating Area
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+
-
-10V
IRF7506
R
D.U.T.
D
V
DD
V
Q
G
Q
GS
Q
GD
R
DS
V
GS
G
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Fig 9b. Gate Charge Test Circuit
1000
100
thJA
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
P
DM
t
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
t
2
Page 6
IRF7506
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
R
G
V
GS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
+
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
D =
Period
V
DD
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 12. For P-Channel HEXFETS
di/dt
Diode Recovery
dv/dt
V
[ ]
DD
[ ]
I
SD
Page 7
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
D
3
- B -
3
- A -
- C B 8X
NOTES:
1 DIMENSIONING AND T OLE RA N C ING PER AN SI Y14 .5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
8 7 6 5
E
0.25 (.010) M A M
1 2 3 4
e
6X
e 1
A
A 1
0.08 (.003) M C A S B S
H
0.10 (.004)
LEAD ASSIG N M EN T S
D D D D D1 D1 D2 D2
8 7 6 5 8 7 6 5
SIN GLE
1 2 3 4 1 2 3 4
S S S G
θ
L
8X
DUAL
S1 G1 S2 G2
C
8X
IRF7506
INCHES MILLIMETERS
DIM
M IN M AX M I N M AX
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66
θ
0 ° 6 ° 0 ° 6 °
RECOMMENDED FOOTPRINT
1.04
( .041 )
8X
3.20
( .126 )
0.38
( .015 )
4.24
( .167 )
0.6 5
( .0256 )
6X
8X
5.28
( .208 )
Part Marking Information
Micro8
EXAM PLE : THIS IS AN IR F7501
PAR T NUMBER
451
7501
TOP
DATE CODE (YW W)
A
Y = LAS T D IGI T O F YEAR
WW = WEEK
Page 8
IRF7506
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
TERM INAL NUMB E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8.1 ( .31 8 )
7.9 ( .31 2 )
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLI NG DIMENSION : MILLIMETER.
330. 00
(12.99 2)
M A X.
NOTES :
1. C O NTRO LLING DIMENSION : MILLIMETER .
2. OU T LINE C ONF O R MS T O EIA -481 & EIA -541.
FEED DIRECTION
14.40 ( .56 6 )
12.40 ( .48 8 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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