Datasheet IRF7495PBF Datasheet

D

DG

A

PD - 95288

V

R

max

I

Absolute Maximum Ratings

Parameter

Units

V

Thermal Resistance

Parameter

Typ.

Max.

Units

R

Junction-to-Ambient (PCB Mount)

e

IRF7495PbF

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters l Lead-Free

100V

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

DS GS

I

@ TA = 25°C

D

I

@ TA = 100°C

D

I

DM

PD @TA = 25°C

dv/dt Peak Diode Recovery dv/dt T

J

T

STG

Drain-to-Source Voltage V Gate-to-Source Voltage Continuous Drain Current, V Continuous Drain Current, V Pulsed Drain Current Maximum Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C Storage Temperature Range

c

@ 10V

GS

@ 10V

GS

h

DSS

S

22m

1

2

3

4

Top View

DS(on)

@VGS = 10V

:

8

7

6

5

Max.

100

± 20

7.3

4.6 58

2.5

0.02

7.3

-55 to + 150

D

7.3A

SO-8

A

W

V/ns

θ

JL

θ

JA

Notes  through  are on page 8

www.irf.com 1

Junction-to-Drain Lead ––– 20 °C/W

––– 50

9/21/04

IRF7495PbF

S

D

G

V

/∆T

R

V

I

Q

t

C

eff.

Avalanche Character istics

EASSingle Pulse A v alanch e E n er g y

IARAvalanche Current

Diode Characterist ics

z

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

(BR)DSS

∆

(BR)DSS DS(on) GS(th)

DSS

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

gfs Forwa r d Transconductance 11 ––– ––– S

g gs

gd d(on) r d(off) f

iss oss rss oss oss oss

Drain-to-Sou r c e B reakdown Volta ge 100 ––– ––– V Breakdown Voltag e Temp. Coef ficient ––– 0.10 ––– V/°C

J

Stat ic D r ai n- to-Sou r c e O n- Resistance – –– 18 22 Gate Threshold Voltage 2.0 ––– 4.0 V Drain-to-Sou r c e Leakage Cu rr ent ––– ––– 20 µA

––– ––– 250 Gate-to-Sou rce Forward Leakage ––– ––– 200 nA Gate-to-Sou r c e R ev e r s e Leakage ––– ––– -200

Parameter Min. Typ. Max. Units

Total Gate Charge ––– 34 51 Gate-to-Source Charge ––– 6.3 ––– nC Gate-to-Drai n ( " M iller") Ch arge ––– 11.7 ––– Turn- O n Delay Time ––– 8.7 ––– Rise Time ––– 13 ––– Turn-Off Delay Time ––– 10 ––– ns Fall Time ––– 36 ––– Input Capacitance ––– 1530 ––– Output Capacitance ––– 250 ––– Reverse Transfer Capac itance ––– 110 ––– pF Output Capacitance ––– 980 ––– Output Capacitance ––– 160 ––– Effe c tive Out put Capac itance ––– 240 –––

Conditions

VGS = 0V, ID = 250µA Referen ce to 25°C, I

= 10V, ID = 4.4A

V

Ω

m

GS

D

VDS = VGS, ID = 250µA

= 100V, VGS = 0V

V

DS

V

= 80V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

V

= -20V

GS

Conditions

VDS = 25V, ID = 4.4A

= 4.4A

I

D

V

= 50V

DS

VGS = 10V VDD = 50V

= 4.4A

I

D

R

G

VGS = 10V VGS = 0V V

DS

ƒ = 1.0MHz V

GS

VGS = 0V, VDS = 80V, ƒ = 1. 0M Hz V

GS

f

Ω

= 6.2

f

= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MH

= 0V, VDS = 0V to 80V

= 1mA

f

g

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

2 www.irf.com

Parameter Units

d

c

Paramete r Min . Typ. Ma x . Units

Contin uous Source Current ––– ––– 2.3 (Body Diode) A

Pulsed Source Current ––– ––– 58 (Body Diode)

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 42 ––– ns Rever s e Recovery Charge ––– 73 ––– nC

c

Typ.

––– –––

Max.

180

4.4

Conditions

MOSFET symbol

mJ

A

showing the integral reverse

p-n junct ion diode. T

= 25°C, IS = 4.4A, VGS = 0V

J

TJ = 25°C, IF = 4.4A, VDD = 25V di/dt = 100A/µ s

f

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

f

IRF7495PbF

100

TOP 15V

) A

(

t

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r D

,

D

I

4.5V

BOTTOM 4.5V

20µs PULSE WIDTH Tj = 25°C

1

0.1 1 10 100 1000 VDS, Drain-to-Sour ce Voltage (V)

100

)

Α

(

t

n

e

r

10

r

u C e

c

r

u

o S

-

o

t

-

n

1

i

a

r D

,

D

I

0.1

TJ = 150°C

TJ = 25°C

V

= 50V

DS

20µs PULSE WIDTH

2 3 4 5

VGS, Gate-to-Source Voltage (V)

VGS 10V

8.0V

5.0V

100

) A

(

t

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r D

,

D

I

4.5V

20µs PULSE WIDTH

1

Tj = 150°C

0.1 1 10 100 1000 VDS, Drain-to-Sour ce Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 7.3A V

= 10V

GS

2.0

)

d

e

z

i

l

1.5

a m

r

o N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

TOP 15V

BOTTOM 4.5V

VGS 10V

8.0V

5.0V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRF7495PbF

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

1 10 100

VDS, Drain-to-Sour ce Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

100.00

12.0

SHORTED

ds

gd

C

iss

C

oss

C

rss

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

,

S G

V

ID= 4.4A

10.0

8.0

6.0

4.0

2.0

0.0 0 10203040

VDS= 80V VDS= 50V VDS= 20V

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA

) A

(

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

10.00 TJ = 150°C

1.00

0.10

0.01

0.0 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drai n Voltage (V)

Fig 7. Typical Source-Drain Diode

TJ = 25°C

V

GS

= 0V

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r D

1

,

TA = 25°C

D

I

Tj = 150°C Single Pulse

0.1 0 1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Sour ce Voltage (V)

Forward Voltage

4 www.irf.com

IRF7495PbF

V 9

1 V

+

-

8

7

6

) A

(

t

5

n

e

r

u C

4

n

i

a

r

3

D ,

D

I

2

1

0

25 50 75 100 125 150

TA , Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

DS

0%

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

0.1

D = 0.50

10

0.20

0.10

0.05

1

0.02

0.01

)

A

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

SINGLE PULSE ( THERMAL RESPONSE )

0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Dur ation (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF7495PbF

I

A

C

0

V

)

25

Ω

m

( e

c

n

a

t

s

i

s

e R

20

n O e

c

r

u

o S

-

o

t

-

15

n

i

a

r D

,

)

n

o

( S

D

10

R

V

GS

= 10V

0 10203040506070

ID , Drain Current (A)

Fig 12. On-Resistance vs. Drain Current

Q

QGSQ

G

GD

Charge

L

DUT

1K

V

GS

VC

G

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

15V

V

(BR)DSS

t

p

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

DRIVER

)

50

Ω

m

( e

c

n

a

t

s

i

40

s

e R n O e

c

r

30

u

o S

o

t

-

n

i

a

r

20

D ,

)

n

o

( S D

10

R

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

V

Gate -to - Source Voltage (V)

GS,

ID = 4.4A

Fig 13. On-Resistance vs. Gate Voltage

500

)

J m

( y

g

r

400

e

n E

e

h

c

300

n

a

l

a

v A

e

s

200

l

u P

e

l

g

n

i

100

S

,

S A

+

-

E

V

DD

0

25 50 75 100 125 150

TOP 2.0A

BOTTOM4.4A

Starting TJ , Junction Temperature (°C)

I

D

3.5A

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

Fig 15c. Maximum Avalanche Energy

vs. Drain Current

6 www.irf.com

SO-8 Package Outline

]

Dimensions are shown in millimeters (inches)

D B

A

87

6

E

e

6X

5

65

4312

e1

0.25 [.010]

A

IRF7495PbF

.0688 .0098 .020

.1968 .1574

.2440 .0196 .050

8°

MILLIMETERSINCHES

MIN MAX

1.75

1.35

0.25

0.10

0.51

0.33

5.00

4.80

4.00

3.80

1.27 BASIC

6.20

5.80

0.50

0.25

1.27

0.40 0°

8°

DIM

MIN MAX

A

.0532

A1

.0040 .013

b

H

A

C

y

c .0075 .0098 0.19 0.25

.189

D

.1497

E

.050 BASIC

e

e1

.025 BASIC 0.635 BASIC

H

.2284

K

.0099

L

.016

0°

y

K x 4 5°

0.25 [.010] C

NO TES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING D IMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT LINE CONFORMS TO JE DEC OUTL INE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 D IMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

SO-8 Part Marking

EX AMPLE: THI S IS AN IRF7101 (MOSFET)

INTERNATIONAL

RE CTIF IER

LOGO

8X b

A1

AB

F7101

0.10 [.004]

XXXX

8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

F OOT PRINT

8X 0.72 [.028]

8X 1.78 [.070

DA TE CODE (YWW) P = DE S IGNAT E S LEAD-FRE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF TH E YEAR WW = WEEK A = ASSEMBLY SITE CODE

LOT CODE PART NUMBER

www.irf.com 7

IRF7495PbF

N 1 2 3

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES: . CONTROLLING DIMENSION : MILLIMETER. . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). . OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 19mH

J

= 4.4A.

AS

 When mounted on 1 inch square copper

board, t ≤ 10 sec.

FEED DIRECTION

330.00 (12.992) MAX.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 I

while V

oss

≤ 5.8A, di/dt ≤ 250A/µs, V

SD

is rising from 0 to 80% V

DS

14.40 ( .566 )

12.40 ( .488 )

DD

≤ V

(BR)DSS

.

DSS

, TJ ≤ 150°C.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/04

8 www.irf.com