Page 1
A
PD - 94654
y
PROVISIONAL
Applications
l High frequency DC-DC converters
V
80V
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
V
DS
V
GS
I
@ TA = 25°C
D
@ TA = 100°C
I
D
I
DM
PD @TA = 25°C
dv/dt Peak Diode Recover
T
J
T
STG
to Simplify Design, (See
OSS
Parameter Units
Drain-t o-Source Vo ltage V
Gate-to-Source Voltage
Conti n uous Drai n Cur r e nt, V
Conti n uous Drai n Cur r e nt, V
Pulsed Drain Curre nt
Maximum Power Dissipation W
Linear D er ating Factor W/°C
Operating Junction and °C
Stor ag e Temperat ur e Ra ng e
c
dv/dt
@ 10V
GS
@ 10V
GS
e
DSS
S
S
S
R
15m
1
2
3
4
Top View
IRF7493
HEXFET® Power MOSFET
DS(on)
:
-55 to + 150
max I
@VGS = 10V
A
8
D
7
D
6
D
5
DG
Max.
80
± 20
9.2
5.8
74
2.5
0.02
4.9
D
9.2A
SO-8
A
V/ns
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
R
θJA
Notes through are on page 4
www.irf.com 1
Junction- to-Drain Lead ––– 20 °C/W
Junction-to-Ambient (PCB Mount)
f
––– 50
03/25/03
Page 2
IRF7493
/
gy
PROVISIONAL
Static @ TJ = 25°C (unless otherwi se specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forwa rd Tr a nsconductanc e 12 ––– ––– S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff.
oss
Avalanche Characteristics
E
AS
I
AR
Drain-t o-Source Breakdown Vol tage 80 ––– ––– V
∆
T
Breakdown Voltage Tem p. Coeffi cient ––– 0.08 ––– V/°C
J
Static Drai n-to-Source On-Resistance ––– 12 15
Gate Threshold Voltag e 2.0 ––– 4.0 V
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reve rse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units
Total Gate Charge ––– 31 46
Gate-to-Source Charge ––– 6.5 ––– nC
Gate -t o - D rain ("Miller") Char g e ––– 12 –––
Turn- On D elay Time ––– 11 –––
Rise Time –––14–––
Turn-Off Delay Time – –– 27 ––– ns
Fall Time –––14–––
Input Capacitance ––– 1370 –––
Output Capacitance ––– 310 –––
Reverse Transfer Capaci tance ––– 130 ––– pF
Output Capacitance ––– 1180 –––
Output Capacitance ––– 210 –––
Effective Output Capacitance ––– 310 –––
Parameter Units
Single Pulse Avalanche Ener
Avalanche Current
c
dh
Typ.
–––
–––
VGS = 0V, ID = 250µA
Reference to 25°C, I
= 10V, ID = 5.5A
V
Ω
m
GS
VDS = VGS, ID = 250µA
= 80V, VGS = 0V
V
DS
V
= 80V, VGS = 0V, TJ = 125°C
DS
= 20V
V
GS
V
= -20V
GS
VDS = 25V, ID = 5.5A
= 5.5A
I
D
V
= 40V
DS
VGS = 10V
VDD = 40V
= 5.5A
I
D
R
= 8.1
G
VGS = 10V
VGS = 0V
= 25V
V
DS
ƒ = 1.0MHz
= 0V, VDS = 1.0V, ƒ = 1.0 M H z
V
GS
V
= 0V, VDS = 64V, ƒ = 1. 0M Hz
GS
= 0V, VDS = 0V to 64V
V
GS
Conditions
Conditions
f
Ω
f
Max.
180
5.5
= 1mA
D
f
e
mJ
A
Diode Characteristics
Parameter Min. Typ. Max. Un its
I
S
Conti n uous Source Curren t –– – ––– 2.3
(Body Diode) A
I
SM
V
SD
t
rr
Q
rr
t
on
Pulsed Source Current ––– ––– 74
(Body Diode)
ch
Diode Fo r w ard Voltage ––– ––– 1.3 V
Reverse Reco very Time ––– 41 ––– ns
Reverse Recovery Charge ––– 68 ––– nC
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
showing the
integral reverse
p-n junct ion diode.
T
= 25°C, IS = 5.5A, VGS = 0V
J
TJ = 25°C, IF = 5.5A, VDD = 25V
di/dt = 100A/µs
Conditions
D
G
S
f
f
2 www.irf.com
Page 3
SO-8 Package Details
E
X
A
M
P
L
E
:
T
H
I
S
I
S
A
N
I
R
F
7
1
0
1
(
M
O
S
F
E
T
)
I
N
T
E
R
N
A
T
I
O
N
A
L
R
E
C
T
I
F
I
E
R
L
O
G
O
F
7
1
0
1
Y
W
W
X
X
X
X
P
A
R
T
N
U
M
B
E
R
L
O
T
C
O
D
E
W
W
=
W
E
E
K
Y
=
L
A
S
T
D
I
G
I
T
O
F
T
H
E
Y
E
A
R
D
A
T
E
C
O
D
E
(
Y
W
W
)
D B
A
87
6
E
e
6X
5
65
4312
e1
H
0.25 [.010] A
A
C
PROVISIONAL
y
IRF7493
.0688
.0098
.020
.1968
.1574
.2440
.0196
.050
8°
MI L L I ME T E R SINCHES
MIN MAX
1.35
0.10
0.33
4.80
3.80
1.27 BASI C
5.80
0.25
0.40
0°
DIM
MIN MAX
A
.0532
A1
.0040
b
.013
c .0075 .0098 0.19 0.25
D
.189
E
.1497
e
.050 BAS IC
e1
.025 BAS IC 0.635 BASIC
H
.2284
K
.0099
L
.016
y
0°
K x 45°
1.75
0.25
0.51
5.00
4.00
6.20
0.50
1.27
8°
8X b
0.25 [.010]
NOTES:
1. DIME NSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMET ER
3. DIMENSI ONS ARE S HOWN IN MILLIMET ERS [INCHE S].
4. OU T L IN E CONF OR MS T O JE DE C OU T L I NE MS -0 12AA.
5 DIMENS ION DOES NOT INCLUDE MOL D PROTRU SIONS .
MOLD PROTRU SIONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOL D PROTRU SIONS .
MOLD PROTRU SIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UB S T RATE.
A1
CAB
SO-8 Part Marking
0.10 [.004]
8X L
7
6.46 [.255]
3X 1.27 [.050]
8X c
F OOT P R I NT
8X 0.72 [.028]
8X 1.78 [.070]
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Page 4
IRF7493
SO-8 Tape and Reel
PROVISIONAL
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS T O EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MIL L IMETER.
2. OUTLINE CO NF O RMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 12mH
J
= 5.5A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
FEED DIRECTION
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
When mounted on 1 inch square copper board, t ≤ 10 sec.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
I
while V
oss
≤ 5.5A, di/dt ≤ 110A/µs, V
SD
is rising from 0 to 80% V
DS
DD
≤ V
(BR)DSS
.
DSS
, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/03
4 www.irf.com
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