Datasheet irf7492 Datasheet

PD - 94498

A

IRF7492

HEXFET® Power MOSFET

Applications

l High frequency DC-DC converters

V

DSS

200V 79m

R

DS(on)

ΩΩ

Ω@V

ΩΩ

max I

= 10V 3.7A

GS

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

SO-8

Absolute Maximum Ratings

Parameter Max. Units

V

DS

V

GS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.0 A I

DM

PD @TA = 25°C Power Dissipation 2.5 W

dv/dt Peak Diode Recovery dv/dt  9.5 V/ns T

J

T

STG

Drain-Source Voltage 200 V Gate-to-Source Voltage ± 20 V

Pulsed Drain Current  30

Linear Derating Factor 0.02 W/°C

Operating Junction and -55 to + 150 Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

D

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 50

°C/W

Notes  through  are on page 8

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06/27/02

IRF7492

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

BV

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 15 0 ––– VGS = 0V, VDS = 0V to 160V 

oss

Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA  Static Drain-to-Source On-Resistance ––– 64 79 mΩ VGS = 10V, ID = 2.2A  Gate Threshold Voltage 2.5 ––– ––– V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 160V, VGS = 0V

DS

= 20V

GS

V

= -20V

GS

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 7.9 ––– ––– S VDS = 50V, ID = 3.7A Total Gate Charge ––– 39 59 ID = 2.2A Gate-to-Source Charge ––– 9.2 ––– nC VDS = 100V Gate-to-Drain ("Miller") Charge ––– 15 ––– VGS = 10V Turn-On Delay Time ––– 15 ––– VDD = 100V Rise Time ––– 13 ––– ID = 2.2A Turn-Off Delay Time ––– 27 ––– RG = 6.5Ω

ns

Fall Time ––– 14 ––– VGS = 10V  Input Capacitance ––– 1820 ––– VGS = 0V Output Capacitance ––– 190 ––– VDS = 25V Reverse Transfer Capacitance ––– 94 –– – pF ƒ = 1.0MHz Output Capacitance ––– 780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 89 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 130 mJ Avalanche Current ––– 4.4 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

2.3

30

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.2A, VGS = 0V  Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 2.2A Reverse RecoveryCharge ––– 200 310 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF7492

100

TOP 15V

10

1

0.1

, Drain-to-Source Current (A)

0.01

D

I

5.5V

BOTTOM 5.5V

20µs PULSE WIDTH

0.001

0.1 1 10 100 1000

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

100.00

VGS 12V

10V

8.0V

7.0V

6.5V

6.0V

100

TOP 15V

10

BOTTOM 5.5V

5.5V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 150°C

0.1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

3.7A

I =



D

VGS 12V

10V

8.0V

7.0V

6.5V

6.0V

)

(Α

2.5

TJ = 150°C

10.00

TJ = 25°C

1.00

, Drain-to-Source Current

D

I

0.10

4.0 5.0 6.0 7.0 8.0

V

= 50V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

R

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160



Tj, Junction Temperature (°C)

Fig 4. Normalized On-Resistance

V =

GS

10V

Vs. Temperature

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IRF7492

)

100000

10000

1000

C, Capacitance(pF)

100

10

1 10 100 1000

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

SHORTED

ds

gd

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

12

ID= 2.2A

10

VDS= 160V VDS= 100V VDS= 40V

8

6

4

, Gate-to-Source Voltage (V)

GS

2

V

0

0 1020304050

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

100µsec



1

SD

I , Reverse Drain Current (A)

°

T = 150 C

J

°



T = 25 C

J

1

, Drain-to-Source Current (A)

D

I

Tc = 25°C

1msec

Tj = 150°C

V = 0 V



0.1

0.2 0.4 0.6 0.8 1.0

V ,Source-to-Drain Voltage (V

SD

GS

Fig 7. Typical Source-Drain Diode

Single Pulse

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

10msec

Forward Voltage

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IRF7492

0

+

-

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

TA , Ambient Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

P

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)



0.1

0.0001 0.001 0.01 0.1 1 10 100 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF7492

(BR)

A

)

100

Ω

90

80

V

= 10V

GS

70

60

, Drain-to-Source On Resistance (m

50

DS (on)

40

R

0 5 10 15 20 25 30

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

)

500

Ω

400

300

200

ID = 3.7A

100

, Drain-to -Source On Resistance (m

DS(on)

0

R

5 6 7 8 9 10 11 12 13 14 15

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

300

TOP

250

200

150



BOTTOM

I

D

2.0A

3.5A

4.4A

100

15V

V

t

p

I

AS

DSS

R

V

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting Tj, Junction Temperature( C

°

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 (.0 1 0 ) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. C O NTR OLL ING D IM ENS IO N : INCH .

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. O U T LINE C O N FO R M S TO JE DEC OU T L INE M S-012A A . DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 M O LD P R O TRU SION S NO T TO E X CEE D 0.2 5 (.0 06). DIM E N S ION S IS T H E L EN G T H O F LEAD F O R S OLDER IN G T O A S U B S T R ATE..

6

B 8X

e1

A1

H

0 .2 5 (.0 1 0) M A M

A

0.10 (.004)

θ

L 8X

K x 45°

6

C 8X

IRF7492

IN CHES MILLIME T ER S

DIM

M IN MAX MIN MAX A .0 532 .0 688 1 .35 1 .7 5 A1 .0 040 .0 098 0 .10 0 .2 5 B .0 14 .0 18 0 .36 0 .4 6 C .0 075 .0 0 98 0 .1 9 0.2 5 D .1 89 .1 9 6 4.8 0 4.9 8 E .1 50 .1 57 3 .81 3 .9 9 e .0 5 0 BAS IC 1 .2 7 BASIC e1 .0 2 5 BAS IC 0 .6 3 5 BASIC H .2 284 .2 4 40 5 .80 6 .2 0 K .0 11 .0 19 0 .28 0 .4 8 L 0 .1 6 .0 50 0 .41 1 .2 7

θ

0 ° 8 ° 0 ° 8 °

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.070) 8X

SO-8 Part Marking

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IRF7492

(

)

(

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER .

2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS

3. OUTLINE CONFORM S TO EIA-481 & EIA-541.

NOT ES :

1. CONTRO LL ING DIMEN SION : MILLIMETER.

2. OUTLINE CO NF O RM S TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 14mH

J

= 4.4A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

FEED DIRECTION

INC HE S).

330.00

12.992

MAX.

14.40 ( .566

12.40 ( .488

 When mounted on 1 inch square copper board.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 I

TJ ≤ 150°C.

while V

oss

≤ 2.2A, di/dt ≤ 210A/µs, V

SD

is rising from 0 to 80% V

DS

DD

≤ V

(BR)DSS

DSS

,

.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/02

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