Datasheet irf7491 Datasheet

A

PD - 94537

IRF7491

HEXFET® Power MOSFET

Applications

 High frequency DC-DC converters

V

80V

Benefits

 Low Gate to Drain Charge to Reduce

Switching Losses

 Fully Characterized Capacitance Including

Effective C App. Note AN1001)

 Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

V

DS

V

GS

I

@ TA = 25°C

D

I

@ TA = 100°C

D

I

DM

P

@TA = 25°C

D

dv/dt Peak Diode Recovery dv/dt T

J

T

STG

to Simplify Design, (See

OSS

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation W

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range



@ 10V

GS

@ 10V

GS



DSS

S

R

DS(on)

16mΩ@V

1

2

3

4

Top View

-55 to + 150

max I

= 10V

GS

A

8

D

7

D

6

D

5

DG

Max.

80

± 20



9.7

6.1

77

2.5

0.02

4.4

D

9.7A

SO-8

A

V/ns

Thermal Resistance

Parameter Typ. Max. Units

R

θJL

R

θJA

Notes  through  are on page 8

www.irf.com 1

Junction-to-Drain Lead ––– 20 °C/W

Junct ion-to-Ambient (PCB Mount) * ––– 50

08/30/02

IRF7491

/

gy

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

gfs Forward Transconductance 9.6 ––– ––– S

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Avalanche Characteristics

E

AS

I

AR

Drain-to-Source Breakdown Voltage 80 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 14 16

Gate Threshold Voltage 3.5 ––– 5.5 V

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Parameter Min. Typ. Max. Units

Total Gate Charge ––– 51 76

Gate-to-Source Charge ––– 18 ––– nC

Gate-to-Drain ("Miller") Charge ––– 18 –––

Turn-On Delay Time ––– 22 –––

Rise Time ––– 19 –––

Turn-Off Delay Time ––– 32 ––– ns

Fall Time ––– 10 –––

Input Capacitance ––– 2940 –––

Output Capacitance ––– 290 –––

Reverse Transfer Capacitance ––– 160 ––– pF

Output Capacitance ––– 980 –––

Output Capacitance ––– 210 –––

Effective Output Capacitance ––– 310 –––

Parameter Units

Single Pulse Avalanche Ener

Avalanche Current





Typ.

–––

VGS = 0V, ID = 250µA

Reference to 25°C, I

V

mΩ

= 10V, ID = 5.8A

GS

V

= VGS, ID = 250µA

DS

V

= 64V, VGS = 0V

DS

= 64V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

= -20V

V

GS

VDS = 25V, ID = 5.8A

I

= 5.8A

D

= 40V

V

DS

V

= 10V

GS

V

= 40V

DD

I

= 5.8A

D

= 6.2Ω

R

G

VGS = 10V

V

= 0V

GS

V

= 25V

DS

ƒ = 1.0MHz

= 0V, VDS = 1.0V, ƒ = 1.0MHz

V

GS

= 0V, VDS = 64V, ƒ = 1.0MHz

V

GS

V

= 0V, VDS = 0V to 64V

GS

Conditions



Max.

130

5.8

= 1mA

D





mJ

A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current ––– ––– 9.7

(Body Diode) A Pulsed Source Current ––– ––– 77

(Body Diode)



Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 47 ––– ns

Reverse Recovery Charge ––– 110 ––– nC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

MOSFET symbol

showing the integral reverse

p-n junction diode.

= 25°C, IS = 5.8A, VGS = 0V

T

J

T

= 25°C, IF = 5.8A, VDD = 25V

J

di/dt = 100A/µs

Conditions

D

G

S



2 www.irf.com

IRF7491

100

TOP 15V

) A

(

10

t n e

r

r u

C e

c

r

1

u o

S

o

t

n

i a

r

0.1

D ,

D

I

6.0V

BOTTOM 6.0V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

100.00

VGS

12V 10V

8.0V

7.5V

7.0V

6.5V

100

TOP 15V

) A

( t n e

r

r u

C e

c

r

10

u o

S

o

t

n

i a

r D

,

D

I

6.0V

20µs PULSE WIDTH

BOTTOM 6.0V

Tj = 150°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

9.7A

VGS

12V 10V

8.0V

7.5V

7.0V

6.5V

)

Α

(

t n e

r

10.00

r u

C e

c

r u o S

o

t

n

1.00

i a

r D

,

D

I

0.10

Fig 3. Typical Transfer Characteristics

TJ = 150°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF7491

100000

10000

) F p

( e c n a

t

i

1000

c a p a

C ,

C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

gs

gd

ds

C

rss

+ Cgd, C

+ C

iss

C

rss

C

oss

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

C

iss

C

oss

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100.00

12.0 ID= 5.8A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

0.0 0 102030405060

Q

VDS= 64V

VDS= 40V

VDS= 16V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA

) A

( t n e

r

r u

C n

i

a

r D e

s

r e v e

R ,

D

I

10.00

1.00

S

0.10

0.0 0.2 0.4 0.6 0.8 1.0

TJ = 150°C

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

TJ = 25°C

V

GS

= 0V

) A

( t

100

n e

r

r u

C e

c

r

10

u o

S

o

t

n

i a

r D

1

, I

TA = 25°C

D

Tj = 150°C Single Pulse

0.1 0 1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Forward Voltage

4 www.irf.com

IRF7491

+

-

12

9

6

D

I , Drain Current (A)

3

0

25 50 75 100 125 150

TA , Ambient Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

0.20

10

thJA

Thermal Response (Z )

0.01

0.10

0.05

0.02

1

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF7491

A

)

20

Ω

m

(

19

e c n

18

a

t s

i s

17

e R n

16

O e

c

r

15

u o

S

14

o

t

n

i

13

a

r D

12

,

) n o

11

( S

D

10

R

0 1020304050607080

V

GS

= 10V

ID , Drain Current (A)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

)

45

Ω

m

(

40

e c n a

t

35

s

i s e

30

R n O

25

e c

r u o

20

S

o

t

15

n

i a

r

10

D ,

) n

5

o

( S D

0

R

6 7 8 9 10 11 12 13 14 15 16

V

Gate -to -Source Voltage (V)

GS,

ID = 9.7A

Fig 13. On-Resistance Vs. Gate Voltage

300

TOP

240

BOTTOM

I

D

2.6A

4.7A

5.8A

Fig 14a&b. Basic Gate Charge Test Circuit

180

and Waveform

120

15V

V

(BR)D SS

t

p

I

AS

V

R

G

20V

L

DS

D.U.T

I

AS

Ω

0.01

t

p

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

DRIVER

+

V

DD

-

60

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

°

6 www.irf.com

SO-8 Package Details

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

7

1

0

1

(

M

O

S

F

E

T

)

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

F

7

1

0

1

Y

W

X

P

A

R

T

N

U

M

B

E

R

L

O

T

C

O

D

E

W

=

W

E

K

Y

=

L

A

S

T

D

I

G

I

T

O

F

T

H

E

Y

E

A

R

D

A

T

E

C

O

D

E

(

Y

W

)

D B

A

87

6

E

e

6X

5

65

4312

e1

H

0.25 [.010] A

A

C

IRF7491

.0688

.0098

.020

.1968

.1574

.2440

.0196

.050

8°

MILLIMETERSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27

8°

0°

DIM

MIN MAX

A

.0532

A1

.0040

b

.013

c .0075 .0098 0.19 0.25

D

.189

E

.1497

e

.050 BASIC

e1

.025 BASIC 0.635 BASIC

H

.2284

K

.0099

L

.016

y

0°

K x 45°

y

8X b

0.25 [.010]

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOL D PROTRU SIO NS NO T TO EXCEE D 0.1 5 [ .00 6] .

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOL D PROTRU SIO NS NO T TO EXCEE D 0.2 5 [ .01 0] .

7 DI MENSI ON IS THE L ENGTH OF LEAD FOR SO LD ERI NG TO A SUBSTRATE.

A1

CAB

SO-8 Part Marking

0.10 [.004] 8X L

7

6.46 [.255]

3X 1.27 [.050]

8X c

FOOTPRINT

8X 0.72 [.028]

8X 1.78 [.070]

www.irf.com 7

IRF7491

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONT ROLLING DIMENSION : M ILLIMET ER.

2. ALL DIMENS IONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONF ORMS TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 7.4mH

J

= 5.8A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

FEED DIRECTION

330.00 (12.992) MAX.

14.40 ( .566 )

12.40 ( .488 )

 When mounted on 1 inch square copper board.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 I

while V

oss

≤ 5.8A, di/dt ≤ 250A/µs, V

SD

is rising from 0 to 80% V

DS

DD

≤ V

(BR)DSS

.

DSS

, TJ ≤ 150°C.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/02

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