Page 1
A
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
V
DSS
100V 39mW@V
1
S
2
S
3
S
4
Top View
R
8
7
6
5
DS(on)
A
D
D
D
DG
PD - 94508
IRF7490
max Q
=10V 37nC
GS
SO-8
g
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.3 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
T
J
T
STG
Drain-Source Voltage 100 V
Gate-to-Source Voltage ± 20
Pulsed Drain Current 43
Operating Junction and -55 to + 150 °C
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 9
www.irf.com 1
9/23/02
Page 2
IRF7490
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 80V
oss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– 33 39 mΩ VGS = 10V, ID = 3.2A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 8.0 ––– ––– S VDS = 50V, ID = 3.2A
Total Gate Charge ––– 37 56 ID = 3.2A
Gate-to-Source Charge ––– 8.0 nC VDS = 50V
Gate-to-Drain ("Miller") Charge ––– 10 VGS = 10V,
Turn-On Delay Time ––– 13 ––– VDD = 100V
Rise Time ––– 4.2 ––– ID = 3.2A
Turn-Off Delay Time ––– 51 ––– RG = 9.1Ω
ns
Fall Time ––– 11 ––– VGS = 10V
Input Capacitance ––– 1720 ––– VGS = 0V
Output Capacitance ––– 220 ––– VDS = 25V
Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 1650 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 130 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 91 mJ
Avalanche Current ––– 3.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
43
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.2A, VGS = 0V
Reverse Recovery Time ––– 67 100 ns TJ = 25°C, IF = 3.2A
Reverse RecoveryCharge ––– 220 330 nC di/dt = 100A/µs
2 www.irf.com
D
S
Page 3
IRF7490
100
V
TOP 15V
D
10
1
0.1
0.01
10V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
GS
7.0V
3.7V
20µs PULSE WIDTH
0.001
0.1 1 10 100
Tj = 25°C
VDS, Dr ain- to-Source Voltage (V)
100.00
)
Α
(
t
10.00
n
e
r
r
u
C
e
c
r
1.00
u
o
S
-
o
t
-
n
i
a
r
0.10
D
,
D
I
0.01
3.0 4.0 5.0 6.0
TJ = 150°C
TJ = 25°C
V
= 50V
DS
20µs PULSE WIDTH
VGS, Gate-t o-Source Voltage (V)
100
V
TOP 15V
D
10
1
10V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
GS
7.0V
3.7V
20µs PULSE WIDTH
0.1
0.1 1 10 100
Tj = 150°C
VDS, Dr ain- to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 5.4A
V
= 10V
GS
2.0
)
d
e
z
i
l
1.5
a
m
r
o
N
(
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 16 0
TJ , Junction Temperature ( °C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Page 4
IRF7490
100000
10000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
1000
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
iss
C
rss
C
oss
VDS, Drain-to-Source Vol t age (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.0
20
SHORTED
ds
gd
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
G
,
V
ID= 3.2A
VDS= 80V
16
12
8
S
4
G
0
0 102030405060
Q
VDS= 50V
VDS= 20V
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITE D BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
)
A
(
t
n
e
r
r
10.0
u
C
n
i
a
r
D
e
s
r
e
v
1.0
e
R
,
D
S
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150°C
VSD, Source-toDrain Vol tage (V)
Fig 7. Typical Source-Drain Diode
TJ = 25°C
V
GS
= 0V
)
A
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
-
o
t
-
n
i
a
r
1
D
,
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
0.1
1 10 100 1000
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
Page 5
IRF7490
+
-
6
5
)
A
(
4
t
n
e
r
r
u
3
C
n
i
a
r
D
,
2
D
I
1
0
25 50 75 100 125 150
TC , Case Tem perature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7490
A
)
0.045
Ω
(
e
c
n
a
t
s
i
s
e
R
0.040
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
)
n
o
(
S
D
R
0.035
0.030
V
= 10V
GS
0 1020304050
ID , Dr ain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
t
p
I
AS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
DRIVER
)
0.06
Ω
(
e
c
n
a
t
s
i
s
e
R
0.05
n
O
e
c
r
u
o
S
o
t
-
0.04
n
i
a
r
D
,
)
n
o
(
S
D
0.03
R
4.0 8. 0 12.0 16.0
V
Gate -to -Source Voltage (V)
GS,
ID = 3. 2A
Fig 13. On-Resistance Vs. Gate Voltage
240
)
J
m
(
200
y
g
r
e
n
E
160
e
h
c
n
a
l
a
120
v
A
e
s
l
u
80
P
e
l
g
n
i
S
40
,
S
A
E
+
V
DD
-
0
25 50 75 100 125 150
Starting TJ, Junc tion Temperature (°C)
I
TOP
D
1.4A
2.6A
BOTTOM
3.2A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com
Page 7
IRF7490
+
-
Reverse
Recovery
Current
Driver Gate Drive
P.W.
D.U.T. ISDWaveform
D.U.T. VDSWaveform
D.U.T
+
-
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-
+
V
DD
R
G
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
controlled by Duty Factor "D"
SD
• D.U.T. - Device Under Test
G
Re-Applied
Voltage
Inductor Curent
* V
GS
Period
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
= 5V for Logic Level Devices
D =
P.W.
Period
VGS=10V
V
DD
I
SD
*
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 17. Gate Charge Waveform
www.irf.com 7
Page 8
IRF7490
E
X
A
M
P
L
E
:
T
H
I
S
I
S
A
N
I
R
F
7
1
0
1
(
M
O
S
F
E
T
)
I
N
T
E
R
N
A
T
I
O
N
A
L
R
E
C
T
I
F
I
E
R
L
O
G
O
F
7
1
0
1
Y
W
W
X
X
X
X
P
A
R
T
N
U
M
B
E
R
L
O
T
C
O
D
E
W
W
=
W
E
E
K
Y
=
L
A
S
T
D
I
G
I
T
O
F
T
H
E
Y
E
A
R
D
A
T
E
C
O
D
E
(
Y
W
W
)
0]
SO-8 Package Details
D B
A
87
6
E
e
6X
5
65
4312
e1
H
0.25 [.010] A
A
C
.0688
.0098
.020
.1968
.1574
.2440
.0196
.050
8°
MILL IME T ER SINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
8°
0°
DIM
MIN MAX
A
.0532
A1
.0040
b
.013
c .0075 .0098 0.19 0.25
D
.189
E
.1497
e
.050 BASIC
e1
.025 BASIC 0.635 BASIC
H
.2284
K
.0099
L
.016
y
0°
K x 45°
y
8X b
0.25 [.010]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF ORMS TO JEDEC OUT L INE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PRO TRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PRO TRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
A1
CAB
SO-8 Part Marking
0.10 [.004]
8X L
7
6.46 [.255]
3X 1.27 [.050]
8X c
FOOT PR INT
8X 0.72 [.02 8]
8X 1.78 [.07
8 www.irf.com
Page 9
SO-8 Tape and Reel
TERM INAL NUM BER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7490
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLL ING DIMENSION : MILLIMET ER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 17mH
J
= 3.2A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
330.00
(12.992)
MAX.
FEED DIRE CTION
14.40 ( .566 )
12.40 ( .488 )
When mounted on 1 inch square copper board
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/02
www.irf.com 9
Loading...