Datasheet irf7484 Datasheet

PD - 94446A

A

Typical Applications

O Relay replacement O Anti-lock Braking System O Air Bag

Benefits

O Advanced Process Technology O Ultra Low On-Resistance O Fast Switching O Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET

®

Power MOSFETs

HEXFET® Power MOSFET

V

DSS RDS(on)

40V 10@VGS = 7.0V 14A

1

S

2

S

3

S

4

IRF7484

max (mW) I

A

8

D

7

D

6

D

5

DG

D

utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C

Top View

SO-8

junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

E

AS

I

AR

E

AR

T

J, TSTG

Pulsed Drain Current  110

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 8.0 V Single Pulse Avalanche Energy 230 mJ Avalanche Current See Fig.16c, 16d, 19, 20 A Repetitive Avalanche Energy mJ Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

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Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 50 °C/W

03/12/03

IRF7484

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 40 ––– – –– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient – –– 0.040 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 10 m Ω VGS = 7.0V, ID = 14A  Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA Forward Transconductance 40 ––– ––– S VDS = 10V, ID = 14A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 200 V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -8.0V

––– ––– 20 V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 125°C

µA

nA

= 40V, VGS = 0V

DS

= 8.0V

GS

Total Gate Charge ––– 69 100 ID = 14A Gate-to-Source Charge ––– 9.0 ––– nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– 16 ––– VGS = 7.0V Turn-On Delay Time ––– 9. 3 ––– VDD = 20V  Rise Time ––– 5.0 ––– ID = 1.0A Turn-Off Delay Time ––– 18 0 ––– RG = 6.2Ω

ns

Fall Time ––– 58 ––– VGS = 7.0V Input Capacitance ––– 3520 ––– VGS = 0V Output Capacitance ––– 66 0 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 76 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.



2.3

110

A

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.3A, VGS = 0V  Reverse Recovery Time ––– 59 89 ns TJ = 25°C, IF = 2.3A Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in square Cu board.  Starting T

I

AS

= 25°C, L = 2.3mH, RG = 25Ω,

J

= 14A. (See Figure 12).

 I

≤ 14A, di/dt ≤ 140A/µs, V

SD

TJ ≤ 150°C.

 Limited by T

, see Fig.16c, 16d, 19, 20 for typical repetitive

Jmax

avalanche performance.

DD

≤ V

(BR)DSS

,

2 www.irf.com

D

S

IRF7484

100000

10000

) A

(

t

n

1000

e

r

u C

100

e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

0.1

10

1

VGS

TOP 7.5V

7.0V

4.5V

3.0V

2.5V

2.3V

2.0V BOTTOM 1.8V

1.8V 20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V )

Fig 1. Typical Output Characteristics

1000.00

10000

) A

1000

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

100

10

1

VGS

TOP 7.5V

7.0V

4.5V

3.0V

2.5V

2.3V

2.0V BOTTOM 1.8V

1.8V

20µs PULSE WIDTH Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V )

Fig 2. Typical Output Characteristics

2.0

I =

D

14A

)

Α

(

t

100.00

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

10.00

1.00

0.10

TJ = 150°C

TJ = 25°C

V

= 15V

DS

20µs PULSE WIDTH

1.0 2.0 3.0 4.0

VGS, Gate-t o-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF7484

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

Ciss

Coss

Crss

+ Cgd, C

gd

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10.00

) A

(

t

n

e

r

u C n

i

a

r

1.00

D e

s

r

e

v

e R

,

D S

I

0.10

0.0 24.0 48.0 72.0 96.0 120.0

TJ = 25°C

TJ = 150°C

VSD, Source-toDrain V oltage (V)

SHORTED

ds

V

= 0V

GS

8

D

I =

14A

7

6

5

4

3

2

GS

V , Gate-to-Source Voltage (V)

1

0

0 10 20 30 40 50 60 70 80

Q , Total G a te Charg e (n C)

G

V = 32V

DS

V = 20V

DS

V = 8V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r

1

D ,

D

I

Tc = 25°C Tj = 150°C Single Pulse

0.1 0 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF7484

0

15

12

9

6

D

I , Drain Current (A)

3

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

0.20

10

0.10

0.05

P

1 2

DM

t

1

t

2

0.02

1

0.01

Thermal Response (Z )

0.1

0.0001 0.001 0.01 0.1 1 10 100 10

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7484

)

16.0

Ω

m

( e

15.0

c

n

a

t

s

i

14.0

s

e R n

13.0

O e

c

r

12.0

u

o S

-

11.0

o

t

-

n

i

a

r

10.0

D ,

)

n

9.0

o

( S D

8.0

R

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V

GS,

ID = 14A

Gate -to - Source Voltage (V)

Fig 12. Typical On-Resistance Vs. Gate

Voltage

1.8

1.7

) V

( e

1.6

g

a

t

l

1.5

o V

d

l

1.4

o

h

s

1.3

e

r

h

t

1.2

e

t

a G

1.1

)

h

t

(

1.0

S G

V

0.9

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

ID = 250µA

)

9.40

Ω

m

( e

9.30

c

n

a

t

s

i

9.20

s

e R n

9.10

O e

c

r

9.00

u

o S

-

o

8.90

t

-

n

i

a

r

8.80

D

,

)

n

8.70

o

( S

D

8.60

R

V

GS

= 7.0V

0 20406080100120

ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

50

40

)

30

W

( r

e w

o

20

P

10

0

1.00 10.00 100.00 1000.00

Time (sec)

Fig 14. Typical Threshold Voltage Vs.

Fig 15. Typical Power Vs. Time

Junction Temperature

6 www.irf.com

IRF7484

A

520

TOP

416

312

208

104

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting Tj, Junction Temperature ( C)

BOTTOM

°

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

I

D

6.3A 11A 14A

15V

DRIVER

+

-

V

R

G

20V

V

DS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 16c. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

DD

I

AS

Fig 16d. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

D

Fig 17. Gate Charge Test Circuit

V

GS

+

V

DS

-

Q

GS

V

G

Fig 18. Basic Gate Charge Waveform

G

Q

GD

Charge

www.irf.com 7

IRF7484

100

Duty Cycle = Single Pulse

10

) A

(

t

n

e

r

u C

1

e

h

c

n

a

l

a

v A

0.1

0.01

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

0.01

0.05

0.10

tav (sec)

Fig 19. Typical Avalanche Current Vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

250 225

)

J

200

m

( y

175

g

r

e

n

150

E e

h

125

c

n

a

l

100

a

v A

,

75

R A

50

E

25

0

25 50 75 100 125 150

TOP Single Pulse BOTTOM 10% Duty Cycle ID = 14A

Starting TJ , Junction Temperature (°C)

Fig 20. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

8 www.irf.com

is

SO-8 Package Details

IRF7484

D B

8X b

5

65

4312

e1

A1

H

0.25 [.010]

A

C

0.10 [.004 ]

A

87

6

E

e

6X

0.25 [.010 ] C A B

NOTES :

1. DIMENSIONING & TOL ERANCING PER ASME Y14.5M-1994.

2. CONTROL L ING DIMENS ION: MIL L IMET ER

3. DI MENS IONS ARE SH OWN IN MILL IME T ER S [INCHE S ].

4. OUT L I N E CONF ORMS T O JE DE C OU TL I NE MS - 01 2 AA.

5 DIME NS ION DOE S NOT I NCLU DE MOLD PR OT RUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].

6 DIME NS ION DOE S NOT I NCLU DE MOLD PR OT RUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].

7 DIMENSION IS T HE L ENGT H OF LEAD F OR SOL DERING T O A S UB S T RATE.

y

3X 1.27 [.050]

DIM

MI N MAX

A

.0532

A1

b

c .007 5 .0098 0.19 0.25

D

E

e

e1

H

K

L

y

K x 45°

8X L

7

6.46 [.255]

.0688

.0040

.0098

.013

.020

.189

.1968

.1497

.1574

.050 BASIC

.025 BASIC 0.635 BASIC

.2284

.2440

.0099

.0196

.016

.050

0°

8°

8X c

F OOT P R I NT

8X 0.72 [.028]

MILLIMETERSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 B ASI C

5.80

6.20

0.25

0.50

0.40

1.27

0°

8°

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE : THIS IS AN IRF 7101 (MOS F ET )

DAT E CODE (YWW) Y = LAST DIGIT OF T HE YE AR

YWW XXXX

INTERNAT IONAL

F7101

RECTIFIER

LOGO

www.irf.com 9

WW = WE E K

LOT CODE

PART NUMBER

IRF7484

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTR OLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/03

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