Page 1
SMPS MOSFET
A
PD- 94055A
IRF7478
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max (m
60V 26@VGS = 10V 4.2A
Ω)Ω)
Ω) I
Ω)Ω)
D
30@VGS = 4.5V 3.5A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top V iew
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
3/13/01
Page 2
IRF7478
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, VDS = 0V to 48V
oss
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
––– 20 26 VGS = 10V, ID = 4.2A
––– 23 30 VGS = 4.5V, ID = 3.5A
mΩ
Gate Threshold Voltage 1.0 – –– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 48V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 4.2A
Total Gate Charge ––– 21 31 ID = 4.2A
Gate-to-Source Charge ––– 4.3 ––– nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– 9 .6 ––– VGS = 4.5V
Turn-On Delay Time ––– 7 .7 ––– VDD = 30V
Rise Time ––– 2.6 ––– ID = 4.2A
Turn-Off Delay Time ––– 44 ––– RG = 6.2Ω
ns
Fall Time ––– 13 ––– VGS = 10V
Input Capacitance ––– 1740 ––– VGS = 0V
Output Capacitance ––– 300 ––– VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 1590 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 220 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 140 mJ
Avalanche Current ––– 4.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
56
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.2A, VGS = 0V
Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.2A
Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs
2 www.irf.com
D
S
Page 3
IRF7478
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
7.0A
I =
D
)
(Α
10
, Drain-to-Source Current
D
I
Fig 3. Typical Transfer Characteristics
TJ = 150°C
TJ = 25°C
V
= 25V
DS
1
2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
20µs PULSE WIDTH
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
Page 4
IRF7478
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
SHORTED
ds
10
I =
4.2A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
V = 48V
DS
V = 30V
DS
V = 12V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRF7478
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.01
0.10
0.05
0.02
1
0.01
P
DM
SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
1 2
J DM thJA A
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7478
(BR)
A
0.028
Ω)
0.026
)
0.04
Ω
0.024
V
GS
= 4.5V
0.022
0.020
0.018
(on) , Drain-to-Source On Resistance (
DS
0.016
R
V
GS
= 10V
0 102030405060
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.03
0.02
ID = 7.0A
, Drain-to -Source On Resistance (
DS(on)
0.01
R
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
400
TOP
300
200
BOTTOM
I
D
1.9A
3.4A
4.2A
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
DRIVER
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
+
V
DD
-
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
6 www.irf.com
Page 7
SO-8 Packag e Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O NTR O L LING DIM E NS IO N : IN C H .
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U T LINE C O N F O R M S T O JE D EC OU T L INE M S - 0 1 2 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD PR O T RU S ION S N O T TO E X CEE D 0 .2 5 (.00 6 ).
DIM E N SIO N S IS T H E L EN GTH O F LEAD F OR S O L D ER IN G TO A S UB S T R ATE..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7478
IN CHE S M IL L IME T ERS
DIM
M IN M AX MIN MAX
A .0 532 .0 6 8 8 1 .35 1 .7 5
A1 .0 040 .0 0 9 8 0 .10 0 .2 5
B .0 14 .0 1 8 0 .36 0 .4 6
C .0 075 .0 0 98 0 .1 9 0.2 5
D .1 89 .1 9 6 4.8 0 4.9 8
E .1 50 .1 5 7 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e1 .0 2 5 BAS IC 0 .6 3 5 BAS IC
H .2 284 .2 4 40 5 .80 6 .2 0
K .0 11 .0 1 9 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070 )
8X
SO-8 Part Marking
www.irf.com 7
Page 8
IRF7478
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CON FORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 16mH
J
= 4.2A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
When mounted on 1 inch square copper board
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
I
TJ ≤ 150°C
while V
oss
≤ 4.2A, di/dt ≤ 160A/µs, V
SD
is rising from 0 to 80% V
DS
DD
≤ V
(BR)DSS
DSS
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
8 www.irf.com
Loading...