Page 1
A
PD- 94094A
SMPS MOSFET
IRF7477
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computers and
V
DSS
R
DS(on)
max (m
30V 8.5@VGS = 10V 14A
10@VGS = 4.5V 11A
Communications
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
l Low Charge Ratio to Eliminate False Turn
On in High Frequency Circuits
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 110
Junction and Storage Temperature Range -55 to + 150 °C
Ω)Ω)
Ω) I
Ω)Ω)
SO-8
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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6/26/01
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IRF7477
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.5 8.5 VGS = 10V, ID = 14A
––– 7. 7 10 VGS = 4.5V, ID = 11A
mΩ
Gate Threshold Voltage 1.0 – –– 2.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 11A
Total Gate Charge ––– 25 38 ID = 11A
Gate-to-Source Charge ––– 6.5 ––– nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 8.2 ––– VGS = 4.5V
Output Gate Charge ––– 30 ––– VGS = 0V, VDS = 15V
Turn-On Delay Time ––– 12 ––– VDD = 15V
Rise Time ––– 9.8 ––– ID = 11A
Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω
ns
Fall Time ––– 5.9 ––– VGS = 4.5V
Input Capacitance ––– 2710 ––– VGS = 0V
Output Capacitance ––– 1120 ––– VDS = 15V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 500 mJ
Avalanche Current ––– 8.2 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 11A, VGS = 0V
2.3
110
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 91 140 ns TJ = 25°C, IF = 11A, VR=15V
Reverse Recovery Charge ––– 130 2 00 nC di/dt = 100A/µs
Reverse Recovery Time – –– 90 140 ns TJ = 125°C, IF = 11A, VR=15V
Reverse Recovery Charge ––– 140 2 10 nC di/dt = 100A/µs
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D
S
Page 3
IRF7477
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
14A
I =
D
1.5
°
T = 25 C
100
D
I , Drain-to-Source Current (A)
10
2.5 3.0 3.5 4.0
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
T = 150 C
J
V = 50V
DS
20µs PULSE WIDTH
1.0
°
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
V =
10V
GS
°
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7477
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
Ciss
Coss
Crss
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
SHORTED
ds
12
I =
11A
D
10
8
6
4
GS
2
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
°
T = 150 C
J
10
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
100µsec
10
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1 1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
Fig 6. On-Resistance Vs. Drain Current
IRF7477
15
12
9
6
D
I , Drain Current (A)
3
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 6
IRF7477
(BR)
A
)
0.009
Ω
0.008
V
= 4.5V
GS
0.007
V
= 10V
0.006
, Drain-to-Source On Resistance (
DS (on)
R
0.005
GS
0 20406080100120
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
)
0.012
Ω
0.010
ID = 14A
0.008
, Drain-to -Source On Resistance (
DS(on)
0.006
R
3.0 3.4 3.8 4.2 4.6
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
1200
TOP
1000
800
600
BOTTOM
I
D
3.7A
6.6A
8.2A
400
15V
V
t
p
I
AS
DSS
R
V
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.0 1 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O NT R O L L ING D IM E NS IO N : INC H .
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U T LIN E CO N FORMS T O J E D E C O U T L IN E M S- 0 1 2 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O L D PROTR U S IONS N OT T O E X C EED 0 .2 5 (.0 0 6 ).
DIM E N SIONS IS T H E L ENGT H OF L E AD FOR SO L D ERIN G TO A S UB S T R A TE..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0 ) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7477
IN CHES MILL IMET ERS
DIM
M IN M AX MIN MA X
A .0 532 .0 688 1 .35 1 .7 5
A1 .0 040 .0 098 0 .10 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 9 8 0 .1 9 0 .2 5
D .1 89 .196 4 .8 0 4 .98
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BA SIC 1 .2 7 B AS IC
e1 .0 2 5 BA SIC 0 .6 35 B AS IC
H .2 28 4 .2 4 4 0 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .27
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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Page 8
IRF7477
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER .
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLINE CONFORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFO R MS T O EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 15mH
J
= 8.2A.
AS
This product has been designed and qualified for the Industrial market.
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
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