Page 1
A
PD- 94037A
IRF7473
HEXFET® Power MOSFET
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
l Uninterrutible Power Supply
V
DSS
100V 26m
R
DS(on)
ΩΩ
Ω@V
ΩΩ
max I
= 10V 6.9A
GS
D
Benefits
l Ultra Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top V iew
A
8
D
7
D
6
D
5
DG
SO-8
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
l Forward 24V input Circuit
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.5 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.8 V/ns
T
J
T
STG
Pulsed Drain Current 55
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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IRF7473
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 230 ––– VGS = 0V, VDS = 0V to 80V
oss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– 22 26 mΩ VGS = 10V, ID = 4.1A
Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 95V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 10 ––– ––– S VDS = 50V, ID = 4.1A
Total Gate Charge ––– 61 ––– ID = 4.1A
Gate-to-Source Charge ––– 21 ––– nC VDS = 50V
Gate-to-Drain ("Miller") Charge ––– 19 ––– VGS = 10V,
Turn-On Delay Time ––– 24 ––– VDD = 50V
Rise Time ––– 20 ––– ID = 4.1A
Turn-Off Delay Time ––– 29 ––– RG = 6.0Ω
ns
Fall Time ––– 11 ––– VGS = 10V
Input Capacitance ––– 3180 ––– VGS = 0V
Output Capacitance ––– 230 ––– VDS = 25V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 150 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 140 mJ
Avalanche Current ––– 4.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
55
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.1A, VGS = 0V
Reverse Recovery Time ––– 55 ––– ns TJ = 25°C, IF = 4.1A
Reverse RecoveryCharge ––– 140 ––– nC di/dt = 100A/µs
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D
S
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IRF7473
1000
100
10
1
, Drain-to-Source Current (A)
0.1
D
I
0.01
0.1 1 10 100
1000
VGS
TOP 15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
6.0V
VDS, Drain-to-Source Voltage (V)
20µs PULSE WIDTH
Tj = 25°C
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
5.5V
20µs PULSE WIDTH
V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
6.9A
I =
D
100
°
T = 150 C
J
10
1
°
T = 25 C
0.1
D
I , Drain-to-Source Current (A)
0.01
5 6 7 8 9 10 11 12
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF7473
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
20
I =
4.1A
D
V = 80V
DS
V = 50V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
DS
V = 20V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10
°
T = 150 C
J
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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IRF7473
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.01
0.10
0.05
0.02
1
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7473
(BR)
A
)
0.028
Ω
0.026
V
= 10V
GS
0.024
( on) , Drain-to-Source On Resistance (
DS
0.022
R
0 20 40 60
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.035
Ω
0.030
0.025
ID = 6.9A
, Drain-to -Source On Resistance (
DS(on)
0.020
R
6.0 8.0 10.0 12.0 14.0 16.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
400
TOP
300
BOTTOM
I
D
1.8A
3.3A
4.1A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
t
p
I
AS
DSS
R
20V
10V
V
G
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Packag e Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O NTR O L LING DIM E NS IO N : IN C H .
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U T LINE C O N F O R M S T O JE D EC OU T L INE M S - 0 1 2 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD PR O T RU S ION S N O T TO E X CEE D 0 .2 5 (.00 6 ).
DIM E N SIO N S IS T H E L EN GTH O F LEAD F OR S O L D ER IN G TO A S UB S T R ATE..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7473
IN CHE S M IL L IME T ERS
DIM
M IN M AX MIN MAX
A .0 532 .0 6 8 8 1 .35 1 .7 5
A1 .0 040 .0 0 9 8 0 .10 0 .2 5
B .0 14 .0 1 8 0 .36 0 .4 6
C .0 075 .0 0 98 0 .1 9 0.2 5
D .1 89 .1 9 6 4.8 0 4.9 8
E .1 50 .1 5 7 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e1 .0 2 5 BAS IC 0 .6 3 5 BAS IC
H .2 284 .2 4 40 5 .80 6 .2 0
K .0 11 .0 1 9 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070 )
8X
SO-8 Part Marking
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IRF7473
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CON FORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 16mH
J
= 4.1A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
When mounted on 1 inch square copper board
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
I
TJ ≤ 150°C
while V
oss
≤ 4.1A, di/dt ≤ 210A/µs, V
SD
is rising from 0 to 80% V
DS
DD
≤ V
(BR)DSS
DSS
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/01
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