Page 1
A
PD- 93913C
SMPS MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
V
DSS
HEXFET® Power MOSFET
R
DS(on)
IRF7470
max I
D
40V 13mΩ 10A
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 40 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 85
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
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IRF7470
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 13 VGS = 10V, ID = 10A
Static Drain-to-Source On-Resistance
––– 10 15 mΩ VGS = 4.5V, ID = 8.0A
––– 14.5 30 VGS = 2.8V, ID = 5.0A
Gate Threshold Voltage 0.8 ––– 2 .0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage ––– – –– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 32V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A
Total Gate Charge ––– 29 44 ID = 8.0A
Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V
Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = 4.5V
Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 10 ––– VDD = 20V
Rise Time ––– 1.9 ––– ID = 8.0A
Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω
ns
Fall Time ––– 3.2 ––– VGS = 4.5V
Input Capacitance ––– 3430 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 20V
Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 300 mJ
Avalanche Current ––– 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V
2.3
85
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 72 110 ns TJ = 25°C, IF = 8.0A, VR= 20V
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Reverse Recovery Time – –– 76 110 ns TJ = 125°C, IF = 8.0A, VR=20V
Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs
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D
S
Page 3
IRF7470
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
10A
I =
D
°
T = 150 C
J
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
2.0 2.2 2.4 2.6 2.8 3.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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Page 4
IRF7470
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ C
+ Cgd, C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
SHORTED
ds
10
I =
8.0A
D
V = 32V
DS
V = 20V
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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Page 5
Fig 6. On-Resistance Vs. Drain Current
IRF7470
10.0
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
100
°
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.01
0.10
0.05
0.02
1
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 6
IRF7470
(BR)
A
)
0.030
Ω
0.025
0.020
V
= 2.7V
GS
0.015
, Drain-to-Source On Resistance (
DS (on)
R
0.010
V
GS
= 4.5V
V
GS
= 10V
0 102030405060
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.020
Ω
0.018
0.016
0.014
ID = 10A
0.012
, Drain-to -Source On Resistance (
DS(on)
0.010
R
2 4 6 8 10 12 14 16
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
800
TOP
600
BOTTOM
I
D
3.6A
6.4A
8.0A
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
t
p
I
AS
DSS
R
V
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 ( .0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C ONTR OL LING DIME NS IO N : IN C H .
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. O UT LINE C ON FO R MS TO J E DEC O UT LINE M S- 0 12 A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD PR OTRU S IO N S NO T T O E XC EE D 0 .2 5 (.00 6 ).
DIM EN SION S IS T H E L EN GT H O F L E AD F OR SO LD ER ING T O A S UB ST R AT E ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7470
IN CHES MIL L IMETER S
DIM
M IN MAX MIN MA X
A .0 53 2 .0 6 8 8 1 .35 1 .7 5
A1 .0 04 0 .0 0 9 8 0 .10 0 .2 5
B .0 14 .0 1 8 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 5 7 3 .81 3 .9 9
e .0 5 0 BASIC 1 .2 7 BAS IC
e1 .0 2 5 BASIC 0.6 3 5 B ASIC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 1 9 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .2 55 )
1.27 ( .050 )
3X
1.78 (.0 70)
8X
SO-8 Part Marking
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Page 8
IRF7470
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CO N FORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 9.4mH
J
= 8.0A.
AS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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