Page 1
A
PD- 93951A
SMPS MOSFET
IRF7469
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
40V 17@VGS = 10V 9.0A
R
DS(on)
max(m
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 40 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 73
Junction and Storage Temperature Range -55 to + 150 °C
Ω)Ω)
Ω) I
Ω)Ω)
SO-8
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
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IRF7469
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 12 17 VGS = 10V, ID = 9.0A
––– 15.5 21 VGS = 4.5V, ID = 7.2A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 32V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 17 ––– ––– S VDS = 20V, ID = 7.2A
Total Gate Charge – –– 15 23 ID = 7.2A
Gate-to-Source Charge ––– 7.0 11 nC VDS = 20V
Gate-to-Drain ("Miller") Charge ––– 5.0 8.0 VGS = 4.5V
Output Gate Charge ––– 16 24 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 11 ––– VDD = 20V
Rise Time ––– 2.2 ––– ID = 7.2A
Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
ns
Fall Time ––– 3.5 ––– VGS = 4.5V
Input Capacitance ––– 2000 ––– VGS = 0V
Output Capacitance ––– 480 ––– VDS = 20V
Reverse Transfer Capacitance ––– 28 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 210 mJ
Avalanche Current ––– 7.2 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 7.2A, VGS = 0V
2.3
73
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 47 71 ns TJ = 25°C, IF = 7.2A, VR=15V
Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs
Reverse Recovery Time – –– 77 120 ns TJ = 125°C, IF = 7.2A, VR=20V
Reverse Recovery Charge ––– 15 0 230 nC di/dt = 100A/µs
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D
S
Page 3
IRF7469
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
100
VGS
TOP
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM
3.5V
3.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM
3.5V
3.5V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
9.0A
I =
D
2.0
°
T = 150 C
J
1.5
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
3.5 4.0 4.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF7469
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
SHORTED
ds
10
I =
7.2A
D
V = 32V
DS
V = 20V
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.8 1.2 1.6 2.0
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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Page 5
IRF7469
10.0
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
100
°
R
V
DS
V
GS
R
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7469
(BR)
A
)
0.03
Ω
V
= 4.5V
GS
0.02
, Drain-to-Source On Resistance (
DS (on)
R
0.01
V
GS
= 10V
0 20406080
I
, Drain Current (A)
D
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.03
Ω
0.02
ID = 9.0A
, Drain-to -Source On Resistance (
DS(on)
0.01
R
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
500
TOP
400
BOTTOM
I
D
3.2A
5.8A
7.2A
Fig 13a&b. Basic Gate Charge Test Circuit
300
and Waveform
200
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
DRIVER
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
+
V
DD
-
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 ( .0 1 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O N T R O L L ING DIM E N S ION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U TLINE C O N F O R M S TO J E DE C O U TLINE M S - 0 12 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O L D P R O T R U S ION S N O T T O E XC E E D 0 .2 5 (.0 0 6 ).
DIM E NSIO N S IS T H E L EN G TH O F L E AD F OR S O L D E R ING T O A SUB S TR A T E ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0 ) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7469
IN CHE S MIL L IMET ERS
DIM
M IN M A X MIN MA X
A .0 53 2 .0 68 8 1 .35 1 .7 5
A1 .0 04 0 .0 09 8 0 .10 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 B AS IC
e1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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IRF7469
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER .
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLINE CONFORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE C ONFORMS TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 8.1mH
J
= 7.2A.
AS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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