Page 1
A
PD - 93883B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
HEXFET® Power MOSFET
V
DSS RDS(on)
30V 12mΩ 11A
IRF7467
max I
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 90
Junction and Storage Temperature Range -55 to + 150 °C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
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IRF7467
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Avalanche Characteristics
E
AS
I
AR
Drain-to-Source Breakdown Voltage 30 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 9. 4 12 VGS = 10V, ID = 11A
Static Drain-to-Source On-Resistance
––– 10.6 13.5 mΩ VGS = 4.5V, ID = 9.0A
––– 17 35 VGS = 2.8V, ID = 5.5A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 9.0A
Total Gate Charge ––– 2 1 32 ID = 9.0A
Gate-to-Source Charge ––– 6.7 10 nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 5.8 8.7 VGS = 4.5V
Output Gate Charge ––– 21 29 VGS = 0V, VDS = 15V
Turn-On Delay Time ––– 7.8 ––– VDD = 15V,
Rise Time ––– 2.5 ––– ID = 9.0A
Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω
ns
Fall Time ––– 4.0 ––– VGS = 4.5V
Input Capacitance ––– 2530 ––– VGS = 0V
Output Capacitance ––– 706 ––– VDS = 15V
Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 223 mJ
Avalanche Current ––– 11 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.79 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 9.0A, VGS = 0V
2.3
90
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 40 60 ns TJ = 25°C, IF = 9.0A, VR= 15V
Reverse Recovery Charge ––– 56 84 nC di/dt = 100A/µs
Reverse Recovery Time – –– 43 65 ns TJ = 125°C, IF = 9.0A, VR=15V
Reverse Recovery Charge ––– 64 96 nC di/dt = 100A/µs
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D
S
Page 3
IRF7467
1000
100
10
1
, Drain-to-Source Current (A)
D
I
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
°
T = 150 C
J
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1000
100
10
2.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
11A
I =
D
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1.5
10
°
T = 25 C
J
1.0
1
D
I , Drain-to-Source Current (A)
V = 15V
DS
0.1
2.0 2.4 2.8 3.2 3.6
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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Page 4
IRF7467
4000
3200
2400
1600
C, Capacitance (pF)
800
0
1 10 100
V
=
0V,
C
C
C
iss
oss
rss
f = 1MHz
+ C
+ C
C SHORTED
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
C
C
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
I =
9.0A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 8 16 24 32 40
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.3 0.6 0.9 1.2 1.5 1.8 2.1
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRF7467
)
R
D.U.T.
D
+
V
DD
-
12
10
8
V
DS
V
GS
R
G
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
D
I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
thJA
0.10
0.05
0.02
1
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec
1
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
P
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
DM
t
d(off)tf
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 6
IRF7467
(BR)
A
)
0.020
Ω
0.019
0.018
0.017
0.016
0.015
0.014
VGS = 4.5V
0.013
, Drain-to-Source On Resistance (
0.012
VGS = 10V
0.011
DS ( on )
0.010
R
0 20406080100
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.020
Ω
0.018
0.016
0.014
ID = 11A
0.012
, Drain-to -Source On Resistance (
DS(on)
0.010
R
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
600
TOP
500
400
BOTTOM
I
D
4.0A
7.2A
9.0A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERA NCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIO NS ARE SHOWN IN MILLIM E TERS ( INCH ES).
4. OUTL IN E CONFOR M S TO J E DE C OUTLINE MS-01 2AA .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D P ROTRU S IONS NOT TO EXCEE D 0.2 5 ( .0 06).
DIMENSION S IS T HE LENGTH OF LEA D FOR S OLD E R IN G TO A SUBSTRATE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7467
IN CH ES MILL IMET E RS
DIM
MIN MA X MIN M A X
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .007 5 .00 9 8 0 .1 9 0 .2 5
D .189 .1 9 6 4 .8 0 4 .9 8
E .150 .157 3 .81 3.99
e .0 5 0 BASIC 1 .27 B ASIC
e1 .02 5 BASIC 0 .6 3 5 BA SIC
H .228 4 .24 4 0 5 .8 0 6 .2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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Page 8
IRF7467
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM E TERS
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 5.5mH
J
= 9.0A.
AS
This product has been designed and qualified for the Industrial market.
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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