Page 1
A
PD- 93884C
SMPS MOSFET
IRF7466
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
30V 12.5@VGS = 10V 11A
R
DS(on)
max(m
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 90
Junction and Storage Temperature Range -55 to + 150 °C
Ω)Ω)
Ω) I
Ω)Ω)
SO-8
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
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IRF7466
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.8 12.5 VGS = 10V, ID = 11A
––– 13 17 VGS = 4.5V, ID = 8.8A
mΩ
Gate Threshold Voltage 1 .0 ––– 3. 0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 22 – –– ––– S VDS = 15V, ID = 8.8A
Total Gate Charge – –– 16 23 ID = 8.8A
Gate-to-Source Charge ––– 7.4 11 nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 5.3 8.0 VGS = 4.5V
Output Gate Charge ––– 19 29 VGS = 0V, VDS = 15V
Turn-On Delay Time ––– 10 ––– VDD = 15V
Rise Time ––– 2 .8 ––– ID = 8.8A
Turn-Off Delay Time ––– 13 ––– RG = 1.8Ω
ns
Fall Time ––– 3 .6 ––– VGS = 4.5V
Input Capacitance ––– 2100 ––– VGS = 0V
Output Capacitance ––– 710 ––– VDS = 15V
Reverse Transfer Capacitance ––– 52 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 230 mJ
Avalanche Current ––– 8.8 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.8 1.3 V TJ = 25°C, IS = 8.8A, VGS = 0V
––– 0.66 ––– TJ = 125°C, IS = 8.8A, VGS = 0V
2.3
90
showing the
A
p-n junction diode.
G
Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 59 89 nC di/dt = 100A/µs
Reverse Recovery Time ––– 42 63 ns TJ = 125°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs
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D
S
Page 3
IRF7466
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
11A
I =
D
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 15V
DS
0.1
2.5 3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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Page 4
IRF7466
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
SHORTED
ds
10
I =
8.8A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
1ms
10ms
Forward Voltage
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Page 5
Fig 6. On-Resistance Vs. Drain Current
IRF7466
12
10
8
6
4
D
I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
100
°
R
V
DS
V
GS
R
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRF7466
(BR)
A
)
0.06
Ω
0.04
0.02
V
= 4.5V
GS
, Drain-to-Source On Resistance (
V
= 10V
DS (on)
R
0.00
GS
0 20406080100
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
)
0.025
Ω
0.020
0.015
ID = 11A
0.010
0.005
, Drain-to -Source On Resistance (
DS(on)
0.000
R
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
600
TOP
500
400
300
BOTTOM
I
D
3.9A
7.0A
8.8A
200
15V
V
t
p
I
AS
DSS
V
DS
R
G
20V
L
D.U.T
I
AS
Ω
0.01
t
p
DRIVER
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
+
V
DD
-
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 ( .0 1 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O N T R O L L ING DIM E N S ION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. O U TLINE C O N F O R M S TO J E DE C O U TLINE M S - 0 12 A A .
5
DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O L D P R O T R U S ION S N O T T O E XC E E D 0 .2 5 (.0 0 6 ).
DIM E NSIO N S IS T H E L EN G TH O F L E AD F OR S O L D E R ING T O A SUB S TR A T E ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0 ) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7466
IN CHE S MIL L IMET ERS
DIM
M IN M A X MIN MA X
A .0 53 2 .0 68 8 1 .35 1 .7 5
A1 .0 04 0 .0 09 8 0 .10 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 B AS IC
e1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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Page 8
IRF7466
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER .
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE C ONFORMS TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 5.9mH
J
= 8.8A.
AS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
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