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SMPS MOSFET
A
PD- 93895
IRF7464
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
200V 0.73Ω 1.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.0 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.8 V/ns
T
J
T
STG
Pulsed Drain Current 10
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 8
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4/25/00
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IRF7464
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.73 Ω VGS = 10V, ID = 0.72A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.72A
Total Gate Charge ––– 9.5 14 ID = 0.72A
Gate-to-Source Charge ––– 2.5 3.8 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 4.6 6. 9 VGS = 10V,
Turn-On Delay Time ––– 11 ––– VDD = 100V
Rise Time ––– 9. 5 ––– ID = 0.72A
Turn-Off Delay Time ––– 18 ––– RG = 24Ω
ns
Fall Time ––– 15 ––– VGS = 10V
Input Capacitance ––– 280 ––– VGS = 0V
Output Capacitance ––– 52 ––– VDS = 25V
Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 330 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 25 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 68 mJ
Avalanche Current ––– 1.2 A
Repetitive Avalanche Energy ––– 0.25 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 50 °C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
10
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.72A, VGS = 0V
Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 0.72A
Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
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D
S
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IRF7464
10
1
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
6.0V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
10
°
T = 150 C
J
J
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
6.0V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
1.2A
2.0
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
6.0 6.5 7.0 7.5 8.0
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
V = 50V
DS
20µs PULSE WIDTH
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF7464
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
100
Coss
C, Capacitance(pF)
10
1
1 10 100 1000
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
SHORTED
ds
20
I =
0.72A
D
V = 160V
DS
V = 100V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
DS
V = 40V
DS
FOR TEST CIRCUIT
0
0 2 4 6 8 10 12 14
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
°
T = 150 C
J
1
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
°
10
10us
100us
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Fig 6. On-Resistance Vs. Drain Current
IRF7464
1.6
1.2
0.8
D
I , Drain Current (A)
0.4
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
100
°
R
V
DS
V
GS
R
G
D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJA
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7464
(BR)
A
)
0.70
Ω
0.60
V
GS
= 10V
)
0.70
Ω
0.60
ID = 0.72A
, Drain-to-Source On Resistance (
DS (on)
R
0.50
0.0 1.0 2.0 3.0 4.0 5.0
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
DRIVER
, Drain-to -Source On Resistance (
DS(on)
0.50
R
7 8 9 10 11 12 13 14 15
V
GS,
Fig 13. On-Resistance Vs. Gate Voltage
200
160
120
80
40
AS
+
V
-
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
Gate -to -Source Voltage (V)
TOP
BOTTOM
J
I
D
0.5A
0.8A
1.2A
°
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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Page 7
SO-8 Packag e Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O NTR O L LING DIM E NS IO N : IN C H .
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U T LINE C O N F O R M S T O JE D EC OU T L INE M S - 0 1 2 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD PR O T RU S ION S N O T TO E X CEE D 0 .2 5 (.00 6 ).
DIM E N SIO N S IS T H E L EN GTH O F LEAD F OR S O L D ER IN G TO A S UB S T R ATE..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7464
IN CHE S M IL L IME T ERS
DIM
M IN M AX MIN MAX
A .0 532 .0 6 8 8 1 .35 1 .7 5
A1 .0 040 .0 0 9 8 0 .10 0 .2 5
B .0 14 .0 1 8 0 .36 0 .4 6
C .0 075 .0 0 98 0 .1 9 0.2 5
D .1 89 .1 9 6 4.8 0 4.9 8
E .1 50 .1 5 7 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e1 .0 2 5 BAS IC 0 .6 3 5 BAS IC
H .2 284 .2 4 40 5 .80 6 .2 0
K .0 11 .0 1 9 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070 )
8X
SO-8 Part Marking
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Page 8
IRF7464
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CON FORM S TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
= 25°C, L = 94mH
J
= 1.2A.
AS
≤ 0.72A, di/dt ≤ 130A/µs, V
DD
≤ V
(BR)DSS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
When mounted on 1 inch square copper board, t<10 sec
,
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Data and specifications subject to change without notice. 4/00
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