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PD- 93843A
SMPS MOSFET
IRF7463
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
l Ultra-Low R
l Low Charge and Low Gate Impedance to
DS(on)
at 4.5V V
GS
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Pulsed Drain Current 110
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150
V
DSS
R
DS(on)
max I
30V 0.008Ω 14A
SO-8
D
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 7
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3/30/00
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IRF7463
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.0063 0.0080 VGS = 10V, ID = 14A
Static Drain-to-Source On-Resistance
––– 0.0074 0.0095 VGS = 4.5V, ID = 12A
––– 0.0105 0.020 VGS = 2.8V, ID = 3.5A
Gate Threshold Voltage 0.6 ––– 2. 0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 100°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 31 ––– ––– S VDS = 24V, ID = 14A
Total Gate Charge ––– 34 51 ID = 14A
Gate-to-Source Charge ––– 7.5 11 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
Turn-On Delay Time ––– 20 ––– VDD = 15V,
Rise Time ––– 16 ––– ID = 1.0A
Turn-Off Delay Time ––– 41 ––– RG = 6.0Ω
Fall Time ––– 44 ––– VGS = 4.5V
Input Capacitance ––– 3110 ––– VGS = 0V
Output Capacitance ––– 850 ––– VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Ω
VDS = 24V, VGS = 0V
µA
nA
VGS = -12V
ns
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 320 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.5
110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time ––– 64 96 n s TJ = 25°C, IF = 2.5A
Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/µs
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D
S
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IRF7463
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
2.0V
2.0V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000.00
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
1000
100.00
10.00
, Drain-to-Source Current (A)
D
I
TJ = 150°C
1.00
0.10
2.0 2.5 3.0 3.5 4.0 4.5
TJ = 25°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 4. Typical Source-Drain Diode
Forward Voltage
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IRF7463
2.0
1.5
1.0
I =
D
14A
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
800
TOP
600
BOTTOM
V =
GS
°
I
D
6.3A
11A
14A
10V
)
0.0080
Ω
0.0075
0.0070
0.0065
, Drain-to-Source On Resistance (
DS (on)
R
0.0060
0 20406080100
ID , Drain Current (A)
V
GS
V
= 4.5V
GS
= 10V
Fig 6. On-Resistance Vs. Drain Current
)
0.016
Ω
0.012
400
ID = 14A
0.008
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 7. Maximum Avalanche Energy
°
, Drain-to -Source On Resistance (
DS(on)
0.004
R
2.0 4.0 6.0 8.0 10.0
V
Gate -to -Source Voltage (V)
GS,
Fig 8. On-Resistance Vs. Gate Voltage
Vs. Drain Current
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IRF7463
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C SHORTED
C
C
+ C
C
iss
C
oss
C
rss
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
14A
D
V = 24V
DS
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7463
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIME NSIO NS AR E S HOW N IN MILL IMETERS (IN CHES ) .
4. OUTLIN E CON F ORMS TO JEDEC OUT L IN E MS-012A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PROTRUSIO NS N OT TO EX C EED 0 .2 5 ( .0 06 ) .
DIMENSIONS IS TH E LE NGT H OF LE AD FOR SOL DER ING T O A SU B ST RAT E..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IN CH ES MILL IME T ERS
DIM
MIN MAX MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 BAS IC 1 .27 BAS IC
e1 .0 2 5 BAS IC 0 .63 5 BASIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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Page 7
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7463
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CO N FORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIM ENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
= 25°C, L = 3.3mH
J
= 14A.
AS
≤ 14A, di/dt ≤ 93A/µs, V
DD
≤ V
(BR)DSS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
,
When mounted on 1 inch square copper board, t<10 sec
oss
while V
is rising from 0 to 80% V
DS
14.40 ( .566 )
12.40 ( .488 )
DSS
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Data and specifications subject to change without notice. 3/00
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