Page 1
A
PD- 93882D
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
HEXFET® Power MOSFET
V
DSS RDS(on)
20V 7.0mΩ 15A
IRF7457
max I
Computer Processor Power
Benefits
l Ultra-Low R
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 120
Junction and Storage Temperature Range -55 to + 150 °C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
3/25/01
Page 2
IRF7457
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Avalanche Characteristics
E
AS
I
AR
Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
––– 5.5 7.0 VGS = 10V, ID = 15A
––– 8.0 10.5 VGS = 4.5V, ID = 12A
mΩ
Gate Threshold Voltage 1.0 –– – 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 30 ––– ––– S VDS = 16V, ID = 12A
Total Gate Charge ––– 28 42 ID = 12A
Gate-to-Source Charge ––– 11 17 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 10 15 VGS = 4.5V,
Output Gate Charge ––– 25 38 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 14 ––– VDD = 10V,
Rise Time ––– 16 ––– ID = 12A
Turn-Off Delay Time ––– 16 ––– RG = 1.8Ω
ns
Fall Time ––– 7.5 ––– VGS = 4.5V
Input Capacitance ––– 3100 ––– VGS = 0V
Output Capacitance ––– 1600 ––– VDS = 10V
Reverse Transfer Capacitance ––– 270 ––– pF ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 265 mJ
Avalanche Current ––– 15 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.8 1.3 V TJ = 25°C, IS = 12A, VGS = 0V
––– 0.67 ––– TJ = 125°C, IS = 12A, VGS = 0V
2.5
120
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 50 75 n s TJ = 25°C, IF = 12A, VR= 15V
Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs
Reverse Recovery Time – –– 50 75 n s TJ = 125°C, IF = 12A, VR=15V
Reverse Recovery Charge ––– 74 110 nC di/dt = 100A/µs
2 www.irf.com
D
S
Page 3
IRF7457
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
V , Drain-to-Source Voltage (V)
DS
°
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
15A
100
10
1
D
I , Drain-to-Source Current (A)
0.1
2.5 3.0 3.5 4.0 4.5
°
T = 150 C
J
°
T = 25 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
Page 4
IRF7457
gsg
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
C
C
C
iss
oss
rss
f = 1MHz
+ C
+ C
d , ds
C SHORTED
GS
C
=
iss
C
=
rssgd
C
=
oss dsgd
C
C
C
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10
I =
12A
D
V = 10V
DS
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRF7457
)
R
D.U.T.
D
+
V
DD
-
16
13
V
DS
V
GS
R
G
10
6
D
I , Drain Current (A)
3
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
thJA
0.10
0.05
0.02
1
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec
1
Fig 10b. Switching Time Waveforms
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
d(on)tr
P
DM
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
t
1
t
d(off)tf
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7457
(BR)
A
)
0.030
Ω
0.025
VGS = 4.5V
0.020
0.015
0.010
, Drain-to-Source On Resistance (
0.005
VGS = 10V
DS ( on )
0.000
R
0 20 40 60 80 100 120
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.020
Ω
0.018
0.016
0.014
ID = 15A
0.012
0.010
, Drain-to -Source On Resistance (
0.008
DS(on)
0.006
R
3.0 3.5 4.0 4.5 5.0 5.5
V
Gate -to -Source Voltage (V)
GS,
Fig 14. On-Resistance Vs. Gate Voltage
700
600
500
TOP
BOTTOM
I
D
5.4A
9.6A
12A
Fig 13a&b. Basic Gate Charge Test Circuit
400
and Waveform
300
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
6 www.irf.com
Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIME NS IONS AR E S HOW N IN MILL IMETERS ( INC H E S).
4. OUT L INE CO NFORMS TO J E DEC OUTL INE MS-0 1 2A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PRO T RUSION S NO T TO E XCEED 0.25 ( .0 06) .
DIMEN SIO NS IS TH E LENG T H O F L EA D FO R S OL DE RIN G TO A S UBSTRA TE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7457
IN CHES M ILLIME TE RS
DIM
MIN MAX MIN MAX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .27 BA S IC
e1 .0 2 5 B ASIC 0 .63 5 BA SIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
www.irf.com 7
Page 8
IRF7457
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE C ONFORMS TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 3.7mH
J
= 12A.
AS
This product has been designed and qualified for the Industrial market.
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8 www.irf.com
Loading...