Page 1
PD- 93840B
A
SMPS MOSFET
IRF7456
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
l Ultra-Low R
l Low Charge and Low Gate Impedance to
DS(on)
at 4.5V V
GS
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 16
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 130
Junction and Storage Temperature Range -55 to + 150 °C
V
DSS
R
DS(on)
max I
20V 0.0065Ω 16A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
www.irf.com 1
4/20/00
Page 2
IRF7456
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00470.0065 VGS = 10V, ID = 16A
Static Drain-to-Source On-Resistance
––– 0.00570.0075 VGS = 4.5V, ID = 13A
––– 0.011 0.020 VGS = 2.8V, ID = 3.5A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 16A
Total Gate Charge ––– 41 62 ID = 16A
Gate-to-Source Charge ––– 9 .7 15 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 18 27 VGS = 5.0V,
Turn-On Delay Time ––– 20 ––– VDD = 10V
Rise Time ––– 25 ––– ID = 1.0A
Turn-Off Delay Time ––– 50 ––– RG = 6.0Ω
Fall Time ––– 52 ––– VGS = 4.5V
Input Capacitance ––– 3640 – –– VGS = 0V
Output Capacitance ––– 1570 ––– VDS = 15V
Reverse Transfer Capacitance ––– 330 ––– pF ƒ = 1.0MHz
Ω
VDS = 16V, VGS = 0V
µA
nA
VGS = -12V
ns
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 250 mJ
Avalanche Current ––– 16 A
Repetitive Avalanche Energy ––– 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.5
130
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time – –– 48 72 ns TJ = 25°C, IF = 2.5A
Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs
2 www.irf.com
D
S
Page 3
IRF7456
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100.0
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 C
J
TJ = 150°C
)
(Α
10.0
TJ = 25°C
1000
100
10
D
I , Drain-to-Source Current (A)
°
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
1.5
1.0
I =
D
16A
1.0
, Drain-to-Source Current
D
I
0.1
2.0 2.2 2.4 2.6 2.8 3.0 3.2
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
Vs. Temperature
www.irf.com 3
10V
Page 4
IRF7456
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
iss
C
oss
C
rss
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
12
I =
16A
D
10
8
6
4
GS
2
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
V = 16V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
100
BY R
DS(on)
13
10us
100us
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
Fig 6. On-Resistance Vs. Drain Current
IRF7456
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
V
DS
V
GS
R
G
D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
P
1 2
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRF7456
(BR)
A
)
0.0062
Ω
V
= 4.5V
GS
0.0058
0.0054
0.0050
, Drain-to-Source On Resistance (
DS (on)
R
0.0046
V
GS
= 10V
0 20406080100
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.012
Ω
0.010
0.008
ID = 16A
0.006
, Drain-to -Source On Resistance (
DS(on)
0.004
R
0 4 8 12 16
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
600
TOP
500
400
BOTTOM
I
D
7.2A
10A
16A
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
t
p
I
AS
DSS
R
V
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
6 www.irf.com
Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 ( .0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O NTR O L LING D IME N SION : IN C H .
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. O U T LINE C O N F OR M S TO JE D EC O U TLINE M S - 0 12 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD PR O T RU SION S N OT T O E X C EE D 0 .2 5 (.0 06 ).
DIM E N S IO N S IS T H E L E N G TH O F LE AD F O R SO LD ER IN G T O A S U B S T R A T E ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7456
IN CHES MIL L IMETERS
DIM
M IN MAX MIN MAX
A .0 53 2 .0 6 8 8 1 .35 1 .7 5
A1 .0 04 0 .0 0 9 8 0 .10 0 .2 5
B .0 14 .0 1 8 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 5 7 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BASIC
e1 .0 2 5 BAS IC 0.6 3 5 B ASIC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 1 9 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070 )
8X
SO-8 Part Marking
www.irf.com 7
Page 8
IRF7456
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CO N FORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 2.0mH
J
= 16A.
AS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8 www.irf.com
Loading...