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PD- 93842B
A
SMPS MOSFET
IRF7455
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
l Ultra-Low R
l Low Charge and Low Gate Impedance to
DS(on)
at 4.5V V
GS
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 120
Junction and Storage Temperature Range -55 to + 150 °C
V
DSS
R
DS(on)
max I
30V 0.0075Ω 15A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
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4/20/00
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IRF7455
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00600.0075 VGS = 10V, ID = 15A
Static Drain-to-Source On-Resistance
––– 0.0069 0.009 VGS = 4.5V, ID = 12A
––– 0.010 0.020 VGS = 2.8V, ID = 3.5A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 20 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 15A
Total Gate Charge ––– 37 56 ID = 15A
Gate-to-Source Charge ––– 8.9 13 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
Turn-On Delay Time ––– 17 ––– VDD = 15V
Rise Time ––– 18 ––– ID = 1.0A
Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
Fall Time ––– 44 ––– VGS = 4.5V
Input Capacitance ––– 3480 ––– VGS = 0V
Output Capacitance ––– 870 ––– VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Ω
VDS = 24V, VGS = 0V
µA
nA
VGS = -12V
ns
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 200 mJ
Avalanche Current ––– 15 A
Repetitive Avalanche Energy ––– 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.5
120
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time – –– 64 96 ns TJ = 25°C, IF = 2.5A
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs
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D
S
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IRF7455
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
15A
1.5
100
D
I , Drain-to-Source Current (A)
10
2.4 2.6 2.8 3.0 3.2 3.4
°
T = 150 C
J
°
T = 25 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF7455
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
iss
oss
rss
C SHORTED
C
C
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
12
I =
15A
D
10
8
6
4
GS
2
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
V = 24V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
100
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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IRF7455
R
D.U.T.
D
+
V
DD
-
16
12
R
V
DS
V
GS
G
10V
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
I , Drain Current (A)
4
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.01
0.10
0.05
0.02
1
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7455
(BR)
A
)
0.008
Ω
V
= 4.5V
GS
0.007
0.006
, Drain-to-Source On Resistance (
DS (on)
R
0.005
V
GS
= 10V
0 20406080100120
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
0.012
Ω
0.010
ID = 15A
0.008
, Drain-to -Source On Resistance (
DS(on)
0.006
R
2.5 3.0 3.5 4.0 4.5
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
500
TOP
400
BOTTOM
I
D
6.7A
9.5A
15A
Fig 13a&b. Basic Gate Charge Test Circuit
300
and Waveform
200
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
°
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIME NSIO NS AR E S HOW N IN MILL IMETERS (INC HES ) .
4. OUTLIN E CON F ORMS TO JEDEC OUT L IN E MS-012A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PROTRUSIO NS N OT TO EX C EED 0 .2 5 ( .0 06 ) .
DIMENSIONS IS TH E LE NGT H OF LE AD FOR SOL DER ING T O A SU B ST RAT E..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7455
IN CH ES M ILL IMETERS
DIM
MIN MAX MIN M A X
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 BAS IC 1 .27 BAS IC
e1 .0 2 5 BAS IC 0 .63 5 BASIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED F OOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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IRF7455
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLIN E CO N FORMS TO EIA-481 & EIA-541.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 1.8mH
J
= 15A.
AS
FEED DIRECTION
INC HES).
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
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