Datasheet irf7434 Datasheet

PD - 9.1709

PRELIMINARY

l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

S1

G1

S2

G2

HEXFET® Power MOSFET

N-CHANNEL MOSFET 1

2

3

4

P-CHANNEL MOSFET

Top View

IRF7343

8

D1

7

D1

6

5

V

D2

R

SO-8

N-Ch P-Ch

55V -55V

DSS

0.050Ω 0.105Ω

DS(on)

Absolute Maximum Ratings

Parameter

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 I

DM

PD @TA = 25°C Maximum Power Dissipation  2.0 W PD @TA = 70°C Maximum Power Dissipation  1.3 W E

AS

I

AR

E

AR

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 -5.0 V/ns T

J, TSTG

Drain-Source Voltage 55 -55 V

Pulsed Drain Current  38 -27

Single Pulse Avalanche Energy 72 114 mJ Avalanche Current 4.7 -3.4 A Repetitive Avalanche Energy 0.20 mJ Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

N-Channel P-Channel Units

Max.

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient  ––– 62.5 °C/W

A

10/29/97

IRF7343

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-P – – — ±100 VGS = ±20V Total Gate Charge

Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 55 — — V P-Ch -55 — — V N-Ch — 0.059 — Reference to 25°C, I P-Ch — 0.054 — Reference to 25°C, I

— 0.0430.050 V

N-Ch

— 0.0560.065 V — 0.0950.105 V

P-Ch

— 0.1500.170 V

V/°C

N-Ch 1.0 — — V P-Ch -1.0 — — V N-Ch 7.9 — — V P-Ch 3.3 — — V N-Ch — — 2.0 V P-Ch — — -2.0 V N-Ch — — 25 V

µA

P-Ch — — -25 V N-Ch — 24 36

P-Ch — 26 38 N-Ch — 2.3 3.4 P-Ch — 3.0 4.5

nC

N-Ch — 7.0 10 P-Ch — 8.4 13 N-Ch — 8.3 12 P-Ch — 14 22 N-Ch — 3.2 4.8 P-Ch — 10 15 N-Ch — 32 48

ns

P-Ch — 43 64 N-Ch — 13 20 P-Ch — 22 32 N-Ch — 740 — P-Ch — 690 — N-Ch — 190 — pF P-Ch — 210 — N-Ch — 71 — P-Ch — 86 —

= 0V, ID = 250µA

GS

V

= 0V, ID = -250µA

GS

= 10V, ID = 4.5A 

GS

= 4.5V, ID = 3.8A 

GS

Ω

= -10V, ID = -3.1A 

GS

= -4.5V, ID = -2.6A 

GS

= VGS, ID = 250µA

DS

V

= VGS, ID = -250µA

DS

= 10V, ID = 4.5A 

DS

S

= -10V, ID = -3.1A 

DS

= 55V, VGS = 0V

DS

= -55V, VGS = 0V

DS

= 55V, VGS = 0V, TJ = 55°C

DS

= -55V, VGS = 0V, TJ = 55°C

DS

nA

N-Channel

= 4.5A, VDS = 44V, VGS = 10V

I

D

P-Channel I

= -3.1A, VDS = -44V, VGS = -10V

D

N-Channel V

= 28V, ID = 1.0A, RG = 6.0Ω,

DD

R

= 16Ω

D

P-Channel V

= -28V, ID = -1.0A, RG = 6.0Ω,

DD

R

= 16Ω

D

N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz

P-Channel

= 0V, VDS = -25V, ƒ = 1.0MHz

V

GS

= 1mA

D

= -1mA

D



Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

 N-Channel I

P-Channel I

 N-Channel Starting T

P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, I

≤ 4.7A, di/dt ≤ 220A/µs, V

SD

≤ -3.4A, di/dt ≤ -150A/µs, V

SD

= 25°C, L = 6.5mH RG = 25Ω, I

J

DD

N-Ch — — 2.0 P-Ch — — -2.0 N-Ch — — 36 P-Ch — — -25 N-Ch — 0.70 1.2 T P-Ch — -0.80 -1.2 T N-Ch — 60 90 P-Ch — 54 80 N-Ch — 120 170 P-Ch — 85 130

≤ V

(BR)DSS

AS

, TJ ≤ 150°C

= 4.7A.

= -3.4A.

, TJ ≤ 150°C

A

= 25°C, IS = 2.0A, VGS = 0V 

J

V

= 25°C, IS = -2.0A, VGS = 0V 

J

N-Channel

ns

= 25°C, IF =2.0A, di/dt = 100A/µs

T

J

P-Channel 

nC

= 25°C, IF = -2.0A, di/dt = 100A/µs

T

J

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  Surface mounted on FR-4 board, t ≤ 10sec.

N-Channel

IRF7343

100

10

TOP

BOTTOM

VGS 15V 12V 10V

8.0V

6.0V

4.5V

4.0V

3.5V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

10

TOP

BOTTOM

VGS 15V 12V 10V

8.0V

6.0V

4.5V

4.0V

3.5V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

100

°

T = 25 C

J

T = 150 C

J

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

3 4 5 6

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

T = 150 C

°

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4

J

°

T = 25 C

J

V = 0 V

GS

V ,Source-to-Drain Voltage (V)

SD

Fig 4. Typical Source-Drain Diode

Forward Voltage

IRF7343

N-Channel

2.5

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

4.7A

I =

D

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 5. Normalized On-Resistance

Vs. Temperature

0.130

0.110

V =

GS

°

10V

0.120

(Ω)

0.100

0.080

VGS = 4.5V

0.060

VGS = 10V

DS (on)

0.040

R , Drain-to-Source On Resistance

0 10 20 30 40

I , Drain Current (A)

D

Fig 6. Typical On-Resistance Vs. Drain

Current

200

TOP

160

BOTTOM

I

D

2.1A

3.8A

4.7A

0.090

I = 4.7 A

0.070

0.050

, Drain-to-Source On Resistance ( Ω )

DS(on)

R

0.030 24681012

D

-V , Gate-to-Source Voltage (V)

GS

Fig 7. Typical On-Resistance Vs. Gate

Voltage

120

80

40

AS

E , Single Pulse Avalanche Energy (mJ)

A

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

°

N-Channel

IRF7343

1200

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED C C

+ C

C

iss

C

oss

C

rss

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

4.5A

D

V = 48V

DS

V = 30V

G

DS

V = 12V

DS

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7343

P-Channel

100

10

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.5V

-4.0V

-3.5V

-3.0V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 12. Typical Output Characteristics

100

10

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-4.5V

-6.0V

-4.0V

-3.5V

-3.0V

1

D

-I , Drain-to-Source Current (A) 20µs PULSE WIDTH

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 13. Typical Output Characteristics

100

°

T = 25 C

J

T = 150 C

J

10

D

-I , Drain-to-Source Current (A)

V = -25V

DS

1

3 4 5 6 7

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 14. Typical Transfer Characteristics

10

°

1

SD

-I , Reverse Drain Current (A)

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

°

T = 150 C

J

SD

T = 25 C

J

V = 0 V

°

GS

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

IRF7343

2.0

1.5

1.0

I =

D

-3.4 A

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 16. Normalized On-Resistance

Vs. Temperature

0.45

0.35

V =

GS

°

-10V

0.240

(Ω)

0.200

VGS = -4.5V

0.160

0.120

VGS = -10V

DS (on)

0.080

R , Drain-to-Source On Resistance

0 2 4 6 8 10 12

-I , Drain Current (A)

D

Fig 17. Typical On-Resistance Vs. Drain

Current

300

TOP

250

200

BOTTOM

I

D

-1.5A

-2.7A

-3.4A

0.25

I = -3.4 A

D

0.15

, Drain-to-Source On Resistance ( Ω )

DS(on)

R

0.05 2 5 8 11 14

-V , Gate-to-Source Voltage (V)

GS

Fig 18. Typical On-Resistance Vs. Gate

Voltage

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

A

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

°

IRF7343

P-Channel

1200

960

720

480

C, Capacitance (pF)

240

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

-V , Drain-to-Source Voltage (V)

DS

-

f = 1MHz

C

+ C

C SHORTED C C

+ C

C

iss

C

oss

C

rss

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

-3.1A

GS

D

16

12

8

4

V =-48V

DS

V =-30V

DS

V =-12V

DS

-V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Package Outline

SO8 Outline

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004)

K x 45°

θ

6

L 8X

C 8X

IRF7343

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC

H .2284 .2440 5.80 6.20 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.070) 8X

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

312

INTERNATIONAL R E CT IF IER L OGO

F7 101

TOP

DATE CODE (YW W) Y = LAST DIGIT OF THE YEAR WW = WEEK

W A FE R

PART NUMBER

LOT CODE (LAST 4 DIGITS)

XXXX

BOTTOM

IRF7343

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .48 4 )

11.7 ( .46 1 )

8.1 ( .3 18 )

7.9 ( .3 12 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIO NS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330. 00 (12.99 2) M A X .

NOT ES :

1. CO NTRO LLING DIME NS ION : MILLIME TER .

2. OUTLINE CON FORMS TO EIA-481 & EIA-541.

FEED D IRECT ION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Data and specifications subject to change without notice. 10/97