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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD -94056
IRF7433
HEXFET® Power MOSFET
V
DSS
-12V 24mΩ@VGS = -4.5V -8.7A
R
max I
DS(on)
D
30mΩ@VGS = -2.5V -7.4A
46mΩ@VGS = -1.8V -6.3A
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -8.9
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -7.1 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
V
GS
TJ , T
STG
Drain-Source Voltage -12 V
Pulsed Drain Current -36
Gate-to-Source Voltage ±8 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7433
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
V
GS(th)
g
fs
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
(BR)DSS
DS(on)
g
gs
gd
iss
oss
rss
Drain-to-Source Breakdown Voltage -12 –– – ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 24 VGS = -4.5V, ID = -8.7A
––– ––– 30 VGS = -2.5V, ID = -7.4A
mΩ
––– ––– 46 VGS = -1.8V, ID = -6.3A
Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
Forward Transconductance 22 ––– ––– S VDS = -10V, ID = -8.7A
Drain-to-Source Leakage Current
––– ––– -1.0 VDS = -9.6V, VGS = 0V
µA
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
nA
Total Gate Charge ––– 20 ––– ID = -8.7A
Gate-to-Source Charge ––– 4.5 ––– nC VDS = -6V
Gate-to-Drain ("Miller") Charge ––– 4.0 ––– VGS = -4.5V
Turn-On Delay Time ––– 8 .8 13 VDD = -6V, VGS = -4.5V
Rise Time ––– 8.2 12 ID = -1.0A
ns
Turn-Off Delay Time ––– 272 408 RD = 6Ω
Fall Time ––– 175 263 RG = 6Ω
Input Capacitance ––– 1877 ––– VGS = 0V
Output Capacitance ––– 51 2 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-2.5
-36
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 28 42 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7433
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.2V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
100
10
-1.2V
1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-8.7A
I =
D
VGS
TOP -10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
1.5
°
T = 150 C
J
10
1.0
(Normalized)
°
T = 25 C
D
-I , Drain-to-Source Current (A)
1
1.0 1.5 2.0 2.5
-V , Gate-to-Source Voltage (V)
GS
J
V = -10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7433
3200
2800
2400
2000
1600
1200
C, Capacitance(pF)
800
400
0
1 10 100
Ciss
Coss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
ds
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
6
I =
-8.7A
D
5
4
3
2
GS
1
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V =-9.6V
DS
V =-6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
°
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF7433
9.0
7.5
6.0
4.5
3.0
D
-I , Drain Current (A)
1.5
0.0
25 50 75 100 125 150
T , Case Temperature( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7433
0.050
)
Ω
0.040
0.030
ID = -8.7A
0.020
, Drain-to -Source On Resistance (
DS(on)
R
0.010
0.0 2.0 4.0 6.0 8.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.15
Ω
0.12
V
= -1.8V
GS
0.09
0.06
V
= -2.5V
GS
0.03
V
= -4.5V
RDS ( on ) , Drain-to-Source On Resistance (
0
GS
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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IRF7433
1.0
0.8
( V )
0.6
GS(th)
-V
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
300
200
ID = -250µA
Power (W)
100
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7433
SO-8 Packag e Details
D B
8X b
5
65
4312
e1
CAB
A1
H
0.25 [.010] A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010]
NOT ES:
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS TO JE DEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.050]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOTPRINT
8X 0.72 [.028]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF71 01 ( MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT O F THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIFIER
LOGO
8 www.irf.com
WW = WEEK
LOT CODE
PART NUMBER
Page 9
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .48 4 )
11.7 ( .46 1 )
IRF7433
8.1 ( .31 8 )
7.9 ( .31 2 )
NOTES:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETERS(INCHES).
3. OUTLINE C ON FORM S TO EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONT ROLLING DIMENS IO N : MILLIM ETER.
2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the commercial market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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