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PD- 94024A
IRF7424
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω) I
Ω)Ω)
-30V 13.5@VGS = -10V -11A
22@VGS = -4.5V -8.8A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -11
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -9.3 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage -30 V
Pulsed Drain Current -47
W
Linear Derating Factor 20 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7424
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– – –– 13.5 VGS = -10V, ID = -11A
––– ––– 22 VGS = -4.5V, ID = -8.8A
mΩ
Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -11A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 75 110 ID = -11A
Gate-to-Source Charge ––– 14 21 nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 12 18 VGS = -10V
Turn-On Delay Time ––– 15 ––– VDD = -15V
Rise Time ––– 23 ––– ID = -1.0A
Turn-Off Delay Time ––– 1 50 ––– RG = 6.0Ω
ns
Fall Time ––– 76 ––– VGS = -10V
Input Capacitance ––– 4030 ––– VGS = 0V
Output Capacitance ––– 5 80 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 410 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-47
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 47 71 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7424
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM
-2.5V
-2.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
-I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM
-2.5V
-2.5V
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 150 C
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-11A
I =
D
J
10
°
T = 25 C
J
1
D
-I , Drain-to-Source Current (A)
V = -15V
DS
0.1
2.5 3.0 3.5 4.0 4.5 5.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
°
T = 150 C
Vs. Temperature
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IRF7424
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
12
I =
-11A
D
10
8
6
4
GS
2
-V , Gate-to-Source Voltage (V)
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
V =-24V
DS
V =-15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
10
1
SD
-I , Reverse Drain Current (A)
0.1
J
°
T = 25 C
J
V = 0 V
GS
0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF7424
12
10
8
6
4
D
-I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.10
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7424
)
0.035
Ω
0.030
0.025
0.020
ID = -11A
0.015
, Drain-to -Source On Resistance (
DS(on)
0.010
R
2.0 4.0 6.0 8.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.030
Ω
0.025
V
= -4.5V
GS
0.020
0.015
, Drain-to-Source On Resistance (
DS (on)
R
0.010
0 102030405060
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
V
GS
= -10V
Current Regulator
Same T ype as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF7424
2.2
2.0
1.8
1.6
1.4
Gate Threshold Voltage(V)
1.2
GS(th)
-V
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
ID = -250µA
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
120
100
80
60
Power (W)
40
20
0
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7424
SO-8 Packag e Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOT ES :
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU TL INE CONFORMS TO JE DE C OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BAS IC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOTPRINT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF71 0 1 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIF IER
LOGO
8 www.irf.com
WW = WEEK
LOT CODE
PART NUMBER
Page 9
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .48 4 )
11.7 ( .46 1 )
IRF7424
8.1 ( .31 8 )
7.9 ( .31 2 )
NOTES:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETERS(INCHES).
3. OU TLINE CO N FORM S TO EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONT ROLLING DIMENS IO N : MILLIM ETER.
2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.
FEED DIRECTION
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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