Page 1
Co-packaged HEXFET Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
Generation 5 Technology
SO-8 Footprint
Schottky Rectifier
F
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
FETKY
1
A
2
A
3
S
4
Top View
PD- 91412L
IRF7422D2
TM
MOSFET & Schottky Diode
A
A
8
D
7
D
6
D
5
DG
SO-8
V
= -20V
DSS
R
DS(on)
= 0.09Ω
Schottky Vf = 0.52V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
Parameter Maximum Units
ID @ TA = 25°C -4.3
ID @ TA = 70°C -3.4
I
DM
PD @TA = 25°C 2.0
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀ -33
Power Dissipation
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to +150 °C
A
W
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
Junction-to-Ambient ➃ 62.5 °C/W
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
≤ -2.2A, di/dt ≤ -50A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com 1
11/27/01
Page 2
IRF7422D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C
I
SM
Schottky Diode Electrical Specifications
Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
Irm Max. Reverse Leakage current 0.13 Vr = 20V Tj = 25°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2 www.irf.com
Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance
––– 0.07 0.09 V
––– 0.115 0.14 V
Ω
= -4.5V, ID = -2.2A
GS
= -2.7V, ID = -1.8A
GS
Gate Threshold Voltage -0.70 ––– ––– VVDS = VGS, ID = -250µA
Forward Transconductance 4.0 ––– ––– SVDS = -16V, ID = -2.2A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
µA
nA
= -12V
GS
Total Gate Charge ––– 15 22 ID = -2.2A
Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 6.0 9.0 VGS = -4.5V, See Fig. 6 and 9
Turn-On Delay Time ––– 8.4 ––– VDD = -10V
Rise Time ––– 26 ––– ID = -2.2A
Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
ns
Fall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10
Input Capacitance ––– 610 ––– VGS = 0V
Output Capacitance ––– 310 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– -2.5
Pulsed Source Current (Body Diode) ––– ––– -17
A
Body Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 56 84 ns TJ = 25°C, IF = -2.2A
Reverse RecoveryCharge ––– 71 110 nC di/dt = -100A/µs
Parameter Max. Units Conditions
A
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
0.77 If = 6.0, Tj = 25°C
V
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C.
mA
18 Tj = 125°C
Page 3
Power Mosfet Characteristics
IRF7422D2
100
10
1
D
-I , Drain-to-SourceCurrent (A )
VGS
TOP -7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
BOTTOM - 1.5V
-1.5V
20µs PULSEW IDTH
T=25°C
0.1
0.01 0.1 1 10 100
-V , Drain-to-SourceVoltage (V)
DS
100
J
100
10
1
D
-I , Drain-to-Source Current (A)
VGS
TOP - 7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
BOTTOM - 1.5V
-1.5V
20µs PULSE WIDTH
A
0.1
0.01 0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
T=150°C
J
A
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I=-3.6A
D
T=25°C
10
1
D
-I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
J
-V , Gate-to-Source Voltage (V)
GS
T=150°C
J
V=-15V
DS
20µsPULSE WIDTH
A
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
V=-4.5V
GS
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
A
Page 4
IRF7422D2
Power Mosfet Characteristics
1500
1000
500
C, Capacitance (pF)
0
1 10 100
V=0V, f=1MHz
GS
C =C+C,CSHORTED
iss gs gd ds
C=C
rss gd
C=C+C
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I=-2.2A
D
V=-16V
DS
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
A
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
SEE FIGURE 12
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.3 0.6 0.9 1.2 1.5
Fig 7. Typical Source-Drain Diode
T = 150°C
J
T=25°C
J
V=0V
GS
-V , Source-to-Drain Voltage (V)
SD
100us
10
1ms
D
-I , Drain Current (A)I , Drain Current (A)
°
=25 C
C
TT= 150 C
A
Single Pulse
1
1 10 100
°
J
-V , Drain-to-SourceVoltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
Page 5
IRF7422D2
Power Mosfet Characteristics
100
0.50
thJA
0.20
10
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMALRESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t/t
2. Peak T =P xZ +T
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.4
0.3
0.2
V=-2.5V
GS
0.14
0.12
0.10
0.08
I=-4.3A
D
0.1
(on) , Drain-to-Source On Resistance (Ω)
DS
R
V=-5.0V
0.0
GS
02468
I , Drain Current (A)
D
Fig 10. Typical On-Resistance Vs. Drain
Current
A
0.06
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.04
234567
V , Gate-to-Source Voltage (V)
GS
Fig 11. Typical On-Resistance Vs. Gate
Voltage
www.irf.com 5
A
Page 6
IRF7422D2
100
Schottky Diode Characteristics
100
T = 150°C
10
(mA)
1
R
J
125°C
100°C
75°C
10
F
T=150°C
J
T=125°C
J
T= 25°C
J
1
InstantaneousForward Current- I (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward VoltageDrop- V (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
FM
0.1
0.01
Reverse Current - I
0.001
0 4 8 12 16 20
Reverse Voltage- V (V)
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
1000
T
Junction Capacitance - C (pF)
100
0 5 10 15 20
Reverse Voltage - V (V)
50°C
25°C
Voltage
R
T=25°C
J
R
A
A
Fig.14 - Typical Junction
Capacitance Vs. Reverse Voltage
6 www.irf.com
Page 7
SO-8 Package Details
E
X
A
M
P
L
E
:
T
H
I
S
I
S
A
N
I
R
F
7
1
0
1
(
M
O
S
F
E
T
)
I
N
T
E
R
N
A
T
I
O
N
A
L
R
E
C
T
I
F
I
E
R
L
O
G
O
F
7
1
0
1
Y
W
W
X
X
X
X
P
A
R
T
N
U
M
B
E
R
L
O
T
C
O
D
E
W
W
=
W
E
E
K
Y
=
L
A
S
T
D
I
G
I
T
O
F
T
H
E
Y
E
A
R
D
A
T
E
C
O
D
E
(
Y
W
W
)
D B
A
87
6
E
e
6X
5
65
4312
e1
0.25 [.010] A
IRF7422D2
.0688
.0098
.020
.1968
.1574
.2440
.0196
.050
8°
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
8°
0°
DIM
MIN MAX
A
.0532
A1
.0040
b
.013
H
A
C
y
c .0075 .0098 0.19 0.25
D
.189
E
.1497
e
.050 BASIC
e1
.025 BASIC 0.635 BASIC
H
.2284
K
.0099
L
.016
y
0°
Kx45°
8X b
0.25 [.010]
NOTES:
1. DIMENSIONING & TOLERANCING PERASMEY14.5M-1994.
2. CONTROLLINGDIMENS ION: MILLIMETER
3. DIMENSIONSARESHOWN IN MILLIMETER S[INCHES].
4. OUTLINECONFORMSTO JEDECOUTLINEMS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
A1
CAB
SO-8 Part Marking
0.10 [.004]
8X L
7
6.46 [.255]
3X 1.27 [.050]
8X c
FOOTPRINT
8X0.72 [.028]
8X1.78 [.070]
www.irf.com 7
Page 8
IRF7422D2
Tape and Reel
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481& EIA-541.
TERMINAL NUMBER 1
8.1 ( .318 )
7.9 ( .312 )
12.3 ( .484 )
11.7 ( .461 )
FEED DIRECTION
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINECONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/01
8 www.irf.com
Loading...