Page 1
A
PD- 91411C
PRELIMINARY
8
7
6
5
l Co-packaged HEXFET
®
Power
MOSFET and Schottky Diode
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
l SO-8 Footprint
A
S
S
FETKY
1
2
3
4
Top View
Description
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
TM
IRF7421D1
MOSFET / Schottky Diode
A
D
D
D
DG
V
= 30V
DSS
R
DS(on)
= 0.035Ω
Schottky Vf = 0.39V
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS@10V➃ 5.8 A
ID @ TA = 70°C 4.6
I
DM
PD @TA = 25°C Power Dissipation ➃ 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ 46
Linear Derating Factor 16 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
Junction-to-Ambient ➃ 62.5 °C/W
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ I
≤ 4.1A, di/dt ≤ 110A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7421D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance — 0.026 0.035 VGS = 10V, ID = 4.1A
— 0.040 0.060 VGS = 4.5V, ID = 2.1A
Ω
Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
Forward Transconductance 4.6 — — S VDS = 15V, ID = 2.1A
Drain-to-Source Leakage Current — — 1. 0 VDS = 24V, VGS = 0V
——25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — -100 VGS = -20V
Gate-to-Source Reverse Leakage — — 100 VGS = 20V
µA
nA
Total Gate Charge — 18 27 ID = 4.1A
Gate-to-Source Charge — 2.2 3.3 nC VDS = 24V
Gate-to-Drain ("Miller") Charge — 5.9 8.9 VGS = 10V (see figure 10) ➂
Turn-On Delay Time — 6.7 — VDD = 15V
Rise Time — 27 — ID = 4.1A
Turn-Off Delay Time — 20 — RG = 6.2Ω
ns
Fall Time — 16 — RD = 3.7Ω ➂
Input Capacitance — 510 — VGS = 0V
Output Capacitance — 200 — pF VDS = 25V
Reverse Transfer Capacitance — 84 — ƒ = 1.0MHz (see figure 9)
Continuous Source Current (Body Diode) — — 3.1 A
Pulsed Source Current (Body Diode) — — 33
Body Diode Forward Voltage — — 1.0 V TJ = 25°C, IS = 4.1A, VGS = 0V
Reverse Recovery Time (Body Diode) — 57 86 ns TJ = 25°C, IF = 4.1A
Reverse Recovery Charge — 93 140 nC di/dt = 100A/µs ➂
2
Schottky Diode Maximum Ratings
Parameter Max. Units. Conditions
I
F(av)
Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.2 TA = 70°C
I
SM
Max. peak one cycle Non-repetitive 1 20 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
I
RM
C
t
Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C
mA
16 TJ = 125°C
Max. Junction Capacitance 110 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
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A
A
with V
RRM
applied
V
R
Page 3
2
A
A
)
A
A
IRF7421D1
Power Mosfet Characteristics
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
D
I , Dra in -to -S o u rc e C u rre n t (A )
3.0V
20µs PULS E WIDTH
T = 25°C
1
0.1 1 10
V , Dra in -t o- S o u rc e V o ltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
D
I , Dr ain-to -So u rc e C u r re n t (A )
20µs PULSE W IDTH
T = 150°C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
100
T = 150°C
DS
J
10
T = 150°C
J
T = 25°C
J
SD
I , Reverse Drain Current (A)
V = 0V
1
0.4 0.8 1.2 1.6 2.0 2.4
V , So urce-to-Drain Voltage (V)
SD
GS
Fig 4. Typical Source-Drain Diode
T = 25°C
J
10
D
I , Drain-to-Source Current (A)
1
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Gate -to- S o u rc e Voltage (V
GS
V = 10V
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
Forward Voltage
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IRF7421D1
A
A
0.0
0.1
0.2
0 5 10 15 20 25 30 35
A
I , Drain Current (A)
D
VGS =10V
VGS = 4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
3691215
A
GS
V , Gate-to-Source Voltage (V)
I = 5.8A
2.0
I = 4 . 1 A
D
1.5
1.0
(N o rma liz e d)
0.5
Power Mosfet Characteristics
DS(on)
R , D ra in -to -S o u rc e On R e s ista n c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem pe rature (°C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
(on) , Drain-to-Source On Resistance (Ω)
DS
R
V = 10 V
GS
(on) , Drain-to-Source On Resistance (Ω)
DS
R
Fig 6. Typical On-Resistance Vs. Drain
Current
100
O P E R A T IO N IN TH IS A R EA L IM IT E D
BY R
10
1
D
I , Drain Current (A)
T = 25 ° C
A
T = 150°C
J
Single Pulse
0.1
0.1 1 10 100
V , D rain-to-Source V oltage (V)
DS
DS(on)
100µs
1ms
10ms
Fig 7. Typical On-Resistance Vs. Gate
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Voltage
Fig 8. Maximum Safe Operating Area
Page 5
Power Mosfet Characteristics
A
A
IRF7421D1
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C S H O RT E D
iss g s g d ds
C = C
rss g d
C = C + C
oss d s g d
C
iss
C
oss
C
rss
V , D rain-to-Source V oltage (V)
DS
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 4.1A
V , Gate -to -S o ur ce V o lta ge (V)
16
12
GS
D
8
4
V = 2 4V
DS
V = 1 5V
DS
FOR TEST CIRCUIT
0
0 5 10 15 20 25 30
Q , To ta l Gate Ch a rg e (n C)
G
SEE FIGURE 9
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
D = 0.50
thJA
10
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
0.1
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
2. Peak T =P x Z + T
1 2
J DM thJA A
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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t
2
Page 6
IRF7421D1
A
Schottky Diode Characteristics
10
(mA)
R
100
0.1
10
1
T = 150°C
J
125°C
100°C
75°C
50°C
0.01
F
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
Reverse Current - I
0.001
0.0001
0 5 10 15 20 25 30
Instantaneous Forward Current - I (A)
1000
T
25°C
Revers e Voltage - V (V)
R
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
A
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V (V)
FM
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
100
T = 25°C
J
Junction Capacitance - C (pF)
10
0102030
Reverse Voltage - V (V)
R
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TO LE RA N CING PE R A N SI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O UT L INE CONF ORMS TO J EDEC OUT L INE MS-0 12 AA .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PR O TRU SIONS N O T TO E XCEE D 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7421D1
IN CHES MILLIMETE RS
DIM
M IN MAX MIN MAX
A .0 53 2 . 0 6 8 8 1 .35 1 .7 5
A1 .0 04 0 . 0 0 9 8 0 .10 0 .2 5
B .0 14 . 0 1 8 0 .36 0 .4 6
C .00 7 5 .0 0 98 0 .1 9 0 . 2 5
D .18 9 .1 9 6 4 .8 0 4 . 9 8
E .1 50 . 1 5 7 3 .81 3 .9 9
e .0 5 0 B AS IC 1 .27 BAS IC
e1 .0 2 5 B AS IC 0 .63 5 BAS IC
H .22 8 4 .2 4 40 5 .8 0 6 . 2 0
K .0 11 . 0 1 9 0 .28 0 .4 8
L 0 .1 6 . 0 5 0 0 .41 1 . 2 7
θ
0 ° 8 ° 0 ° 8 °
RECOMME NDED F OOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
(IRF7101 example )
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Page 8
IRF7421D1
Tape and Reel
NOTES:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. ALL DIMENSIO NS ARE SHOWN IN MILLIMETERS(INC HES).
3. O UTLINE CONFORMS TO EIA-481 & EIA-541.
TERMINAL NUMBER 1
8.1 ( .318 )
7.9 ( .312 )
12 .3 ( . 4 8 4 )
11 .7 ( . 4 6 1 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OU TLINE CONFORM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 8/98
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7421d1.p65 8/20/98, 4:07 PM8
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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