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PD - 94278
IRF7420
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
V
DSS
R
DS(on)
max I
-12V 14mΩ@VGS = -4.5V -11.5A
17.5mΩ@VGS = -2.5V -9.8A
26mΩ@VGS = -1.8V -8.1A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage -20 V
Pulsed Drain Current -46
W
Linear Derating Factor 20 mW/°C
Gate-to-Source Voltage ±8 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7420
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
V
∆V
R
g
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
(BR)DSS
(BR)DSS
DS(on)
GS(th)
fs
g
gs
gd
iss
oss
rss
Drain-to-Source Breakdown Voltage -12 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 14 V
––– ––– 17.5 VGS = -2.5V, ID = -9.8A
mΩ
= -4.5V, ID = -11.5A
GS
––– ––– 26 VGS = -1.8V, ID = -8.1A
Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
Forward Transconductance 32 ––– ––– SVDS = -10V, ID = -11.5A
Drain-to-Source Leakage Current
––– ––– -1.0 V
µA
= -9.6V, VGS = 0V
DS
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
nA
Total Gate Charge ––– 38 ––– ID = -11.5A
Gate-to-Source Charge ––– 8.1 ––– nC VDS = -6V
Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = -4.5V
Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V
Rise Time ––– 8.8 13 ID = -1.0A
ns
Turn-Off Delay Time ––– 291 437 RD = 6Ω
Fall Time ––– 225 338 RG = 6Ω
Input Capacitance ––– 3529 ––– VGS = 0V
Output Capacitance ––– 1013 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 656 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-46
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 61 92 µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7420
100
10
1
0.1
, Drain-to-Source Current (A)
D
-I
-1.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
100
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-11.5A
I =
D
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1.5
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.5 1.0 1.5 2.0 2.5
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = -10V
DS
20µs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
GS
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7420
)
5500
5000
4500
4000
3500
3000
2500
2000
C, Capacitance(pF)
1500
1000
500
0
1 10 100
Ciss
Coss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
ds
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
6
I =
-11.5A
D
5
4
3
2
GS
1
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
V =-9.6V
DS
V =-6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
10
°
T = 150 C
J
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
100us
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7420
12
9
6
D
-I , Drain Current (A)
3
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
0.20
10
0.10
0.05
P
0.02
1
0.01
Thermal Response(Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7420
0.025
)
Ω
0.020
0.015
ID = -11.5A
0.010
, Drain-to -Source On Resistance (
DS(on)
R
0.005
0.0 2.0 4.0 6.0 8.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.08
Ω
0.06
V
= -1.8V
GS
0.04
V
= -2.5V
0.02
RDS ( on ) , Drain-to-Source On Resistance (
0
GS
V
GS
= -4.5V
0.0 10.0 20.0 30.0 40.0 50.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF7420
1.0
0.9
0.8
0.7
( V )
0.6
GS(th)
0.5
-V
0.4
0.3
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
ID = -250µA
400
350
300
250
200
Power (W)
150
100
50
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7420
SO-8 Packag e Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOTES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT L INE CONFORMS T O JEDE C OU T LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING T O
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOT P RINT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BAS IC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7 101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIG IT OF THE YEAR
YW W
XXXX
INTERNAT IONAL
F7101
RECTIFIER
LOGO
8 www.irf.com
WW = WEEK
LOT CODE
PART NUMBER
Page 9
(
)
)
)
(
)
)
)
)
Tape and Reel
TERMINAL NUMBER 1
.484
12.3
11.7 ( .461
IRF7420
8.1 ( .318
7.9 ( .312
NOTES:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETERS(INCHES).
3. O U TLINE C O N FORM S TO EIA-481 & EIA-541.
330. 00
12.992
MAX.
NOTES :
1. CONT ROLLING DIMENS IO N : MILLIM ETER.
2. OU TL INE CO N FO R MS TO E IA-481 & EIA -541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .5 6 6
12.40 ( .4 8 8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
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