Page 1
PD - 9.1356D
IRF7416
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S
S
1
2
3
4
Top View
A
8
DS
V
7
D
6
D
5
DG
R
DSS
DS(on)
= -30V
= 0.02Ω
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10
@ TA = 70°C Continuous Drain Current, VGS @ - 10V -7.1
I
D
I
DM
= 25°C Power Dissipation 2.5
P
D @TA
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J, TSTG
Pulsed Drain Current -45
Linear Derating Factor 0.02 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 370 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
Maximum Junction-to-Ambient ––– 50
θJA
A
W
°C/W
8/25/97
Page 2
IRF7416
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-to-Source Reverse Leakage ––– – –– 10 0 VGS = 20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.020 VGS = -10V, ID = -5.6A
––– ––– 0.035 VGS = -4.5V, ID = -2.8A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 5.6 ––– ––– S VDS = -10V, ID = -2.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– – –– -100 VGS = -20V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 61 92 ID = -5.6A
Gate-to-Source Charge ––– 8.0 12 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 and 9
Turn-On Delay Time ––– 18 ––– VDD = -15V
Rise Time ––– 49 ––– ID = -5.6A
Turn-Off Delay Time ––– 59 ––– RG = 6.2Ω
ns
Fall Time ––– 60 ––– RD = 2.7Ω, See Fig. 10
Input Capacitance ––– 1700 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 41 0 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -3.1
––– ––– - 4 5
Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V
Reverse Recovery Time ––– 56 85 ns TJ = 25°C, IF = -5.6A
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs
I
≤ -5.6A, di/dt ≤ 100A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 25mH
J
= -5.6A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
DD
≤ V
(BR)DSS
,
G
S
Page 3
IRF7416
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
-3.0V
20µs PULSE WIDT H
T = 25 °C
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
-3.0V
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
20µs PULSE WIDT H
T = 150°C
A
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = -5 .6A
D
T = 25°C
J
T = 150° C
J
10
D
-I , Drain-to- So u rc e Cur r e n t ( A)
1
3.0 3.5 4.0 4.5 5.0 5.5
-V , G ate - to -S ourc e V o l ta g e (V )
GS
V = -1 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e O n R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em perat u re ( °C )
J
V = -10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRF7416
4000
3000
2000
V = 0V , f = 1 MHz
GS
C = C + C , C S HO RTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, C apac itance (pF)
1000
0
1 10 100
C
rss
V , Dr ain-to-S ou rce V olta ge ( V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = -5.6A
D
V = - 2 4V
16
12
8
4
GS
DS
V = - 1 5V
DS
-V , G ate -to-S ou rce V olta ge (V )
FOR TEST CIRCUIT
A
0
0 20406080100
Q , Tota l Gate Ch arge (nC)
G
SEE FIGURE 9
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
10
SD
-I , R ev er se D rain C u rre nt (A )
1
0.4 0.6 0.8 1.0 1.2
-V , Source-to-Drain Voltage (V)
SD
T = 25 °C
J
V = 0V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
A
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Page 5
+
-
-10V
IRF7416
R
D.U.T.
D
V
DD
V
G
-10V
DS
V
GS
Q
G
Q
GS
V
G
Q
GD
Charge
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
I
D
Fig 9b. Gate Charge Test Circuit
100
D = 0.50
V
DS
+
Fig 10a. Switching Time Test Circuit
t
d(off)tf
V
GS
10%
90%
V
DS
t
d(on)tr
Fig 10b. Switching Time Waveforms
thJA
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
J DM thJA A
Page 6
IRF7416
L
D.U.T
I
AS
0.01
p
DRIVER
Ω
15V
V
DD
R
-20V
V
DS
G
t
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
(BR)DSS
1000
TOP
I
D
-2.5A
-4.5A
800
A
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
-5.6A
o
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Page 7
IRF7416
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
**
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
R
G
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
-
D =
G
P.W.
Period
+
VGS=10V
[ ] ***
*
V
DD
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 13. For P-Channel HEXFETS
di/dt
Diode Recovery
dv/dt
V
DD
[ ]
I
SD
[ ]
Page 8
IRF7416
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
INTERNATIONAL
R E CTIF IER
L OGO
F7 101
TOP
312
DATE CODE (YW W)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AFER
PART NUMBER
LOT C ODE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .48 4 )
11.7 ( .46 1 )
IRF7416
8.1 ( .3 18 )
7.9 ( .3 12 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIO NS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330. 00
(12.99 2)
M A X.
NOT ES :
1. CO NTRO LLING DIMENS ION : MILLIM E TER .
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED D IRECT ION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Loading...