Page 1
PD - 9.1613A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S
S
S
2
3
4
Top View
IRF7413A
HEXFET® Power MOSFET
A
A
81
D
7
D
6
D
5
DG
SO-8
R
DS(on)
V
= 30V
DSS
= 0.0135Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
@ TA = 70°C Continuous Drain Current, VGS @ 10V 8.4
I
D
I
DM
= 25°C Power Dissipation 2.5
P
D @TA
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 58
Linear Derating Factor 0.02 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 260 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
Maximum Junction-to-Ambient ––– 50
θJA
A
W
°C/W
8/25/97
Page 2
IRF7413A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient – –– 0.034 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.0135 VGS = 10V, ID = 6.6A
––– ––– 0.020 VGS = 4.5V, ID = 3.3A
Ω
Gate Threshold Voltage 1.0 –– – ––– V VDS = VGS, ID = 250µA
Forward Transconductance 10 ––– ––– S VDS = 10V, ID = 3.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– –– – -100 VGS = -20V
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 52 79 ID = 7.3A
Gate-to-Source Charge ––– 6.1 9.2 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 16 23 VGS = 10 V, See Fig. 6 and 9
Turn-On Delay Time ––– 8.6 ––– VDD = 15V
Rise Time ––– 50 ––– ID = 7.3A
Turn-Off Delay Time ––– 52 ––– RG = 6.2Ω
ns
Fall Time ––– 46 ––– RD = 2.0Ω, See Fig. 10
Input Capacitance ––– 1800 ––– VGS = 0V
Output Capacitance ––– 680 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 24 0 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 3.1
––– ––– 58
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 6.6A, VGS = 0V
Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 7.3A
Reverse RecoveryCharge ––– 200 300 nC di/dt = 100A/µs
= 25°C, L =9.8mH
J
=7.3A. (See Figure 12)
AS
≤ 7.3A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
A
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
Page 3
IRF7413A
100
10
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TO M 3. 0V
100
10
3.0V
3.0V
D
I , Drain-to-Source Cu rrent (A)
20µs PULSE WIDT H
T = 25 °C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
A
D
I , Drain-to-Source Current (A)
20µs PULSE WIDT H
T = 150°C
1
0.1 1 10
V , Drain-to -Sou rce Vo ltage ( V)
DS
J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
2.0
I = 7.3 A
D
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
A
T = 150°C
J
T = 25°C
J
10
D
I , Dra in -to -So u rce Cu rrent (A)
1
3.0 3.5 4.0 4.5
V , Ga te-to-So urce Voltage (V)
GS
V = 10 V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e O n R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em perat u re ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRF7413A
3200
2800
2400
2000
1600
1200
C, C apac itance (pF)
800
400
0
1 10 100
V = 0 V , f = 1 MHz
GS
C = C + C , C SHO RT ED
iss gs gd ds
C = C
rss gd
C
C = C + C
iss
oss ds gd
C
oss
C
rss
V , Drai n-to -Sourc e Voltage ( V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 7.3A
D
16
12
8
4
GS
V , Gate- to -S ou rce V oltag e (V )
A
0
0 102030405060
Q , Total Ga te Ch arg e (nC)
G
V = 24 V
DS
V = 15 V
DS
FOR TEST CIRCUIT
SEE FIGURE 9
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
J
T = 150°C
J
10
SD
I , Rev ers e Dr ain C u rren t (A)
V = 0V
1
0.4 1.2 2.0 2.8 3.6
V , Sour c e-to-D rain Voltage ( V )
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100us
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
A
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
+
-
10V
IRF7413A
R
D.U.T.
D
V
DD
V
Q
G
Q
GS
V
G
Q
GD
R
DS
V
GS
G
10V
Pulse Width ≤ 1 µs
Charge
Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
D
Fig 9b. Gate Charge Test Circuit
100
D = 0.50
+
V
DS
-
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
thJA
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
J DM thJA A
Page 6
IRF7413A
15V
DRIVER
+
-
R
V
G
20V
DS
L
D.U.T
I
AS
Ω
t
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
600
TOP
500
400
300
V
DD
A
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
I
3.3A
6.0A
7.3A
o
D
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Page 7
IRF7413A
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
Period
P.W.
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 13. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRF7413A
Package Outline
SO8 Outline
Dimensions are shown in millimeters (inches)
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IR F7101
INTERNATIONAL
RECTIFIER
LOGO
F7101
TOP
312
DATE CODE (YW W )
Y = LAST DIGIT OF THE YEAR
WW = WEEK
WAFE R
PART NUMBER
LOT CO DE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINATION
NUMBER 1
2.05 (.080)
1.95 (.077)
4.10 (.161)
3.90 (.154)
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
IRF7413A
0.35 (.013)
0.25 (.010)
1
FEED DIRECTION
330.00
(13.000)
MAX.
NOTES:
1 CONFORMS TO EIA-481-1
2 INCLUDES FLANGE DISTORTION @ OUTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CONTRO LLING DIMENSION : METRIC
8.10 (.318)
7.90 (.311)
13.20 (.519)
12.80 (.504)
5.55 (.218)
5.45 (.215)
6.50 (.255)
6.30 (.248)
2.60 (.102)
1.50 (.059)
15.40 (.607)
11.90 (.469)
2
14.40 (.566)
12.40 (.448)
3
5.30 (.208)
5.10 (.201)
18.40 (.724)
MAX
50.00
(1.969)
M IN.
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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