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PD - 94025
IRF7410
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
V
DSS
R
DS(on)
max I
-12V 7mΩ@VGS = -4.5V -16A
9mΩ@VGS = -2.5V -13.6A
13mΩ@VGS = -1.8V -11.5A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -16
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -13 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage -20 V
Pulsed Drain Current -65
W
Linear Derating Factor 20 mW/°C
Gate-to-Source Voltage ±8 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
V
∆V
R
g
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
(BR)DSS
(BR)DSS
DS(on)
GS(th)
fs
g
gs
gd
iss
oss
rss
Drain-to-Source Breakdown Voltage -12 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.006 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 7V
––– ––– 9V
mΩ
= -4.5V, ID = -16A
GS
= -2.5V, ID = -13.6A
GS
––– ––– 13 VGS = -1.8V, ID = -11.5A
Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
Forward Transconductance 55 ––– ––– SVDS = -10V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -1.0 V
µA
= -9.6V, VGS = 0V
DS
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
nA
Total Gate Charge ––– 91 ––– ID = -16A
Gate-to-Source Charge ––– 18 ––– nC VDS = -9.6V
Gate-to-Drain ("Miller") Charge ––– 25 ––– VGS = -4.5V
Turn-On Delay Time ––– 13 20 VDD = -6V, VGS = -4.5V
Rise Time ––– 12 18 ID = -1.0A
ns
Turn-Off Delay Time ––– 271 407 RD = 6Ω
Fall Time ––– 200 300 RG = 6Ω
Input Capacitance ––– 8676 ––– VGS = 0V
Output Capacitance ––– 2344 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 1604 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-65
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 97 145 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 134 201 µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7410
100
10
1
, Drain-to-Source Current (A)
D
-I
-1.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
100
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
100
10
-1.0V
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-16A
I =
D
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
°
T = 150 C
J
10
°
T = 25 C
J
D
-I , Drain-to-Source Current (A)
V = -10V
DS
1
1.0 1.2 1.4 1.6 1.8 2.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7410
)
14000
12000
10000
8000
6000
C, Capacitance(pF)
4000
2000
Coss
0
1 10 100
Ciss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
ds
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
SHORTED
6
I =
-16A
D
5
4
3
2
GS
1
-V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
V =-9.6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
10
°
T = 25 C
J
1
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7410
16
12
8
D
-I , Drain Current (A)
4
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
0.20
10
thJA
Thermal Response(Z )
0.01
0.10
0.05
0.02
1
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7410
0.010
)
Ω
0.008
0.006
ID = -16A
0.004
, Drain-to -Source On Resistance (
DS(on)
R
0.002
0.0 2.0 4.0 6.0 8.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.02
Ω
0.015
V
= -1.8V
GS
0.01
V
= -2.5V
GS
0.005
V
= -4.5V
GS
RDS ( on ) , Drain-to-Source On Resistance (
0
0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF7410
1.0
0.8
( V )
0.6
GS(th)
-V
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
ID = -250µA
700
600
500
400
300
Power (W)
200
100
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7410
SO-8 Packag e Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OU TLINE CONF ORMS T O JE DE C OUT L INE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BAS IC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOTPR INT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 ( MOSFET)
DATE CODE (YWW)
Y = LAST DIG IT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECT IF IER
LOGO
8 www.irf.com
WW = WEEK
LOT COD E
PART NUMBER
Page 9
(
)
)
)
(
)
)
)
)
Tape and Reel
TERMINAL NUMBER 1
.484
12.3
11.7 ( .461
IRF7410
8.1 ( .318
7.9 ( .312
NOTES:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETERS(INCHES).
3. O U TLINE C O N FORM S TO EIA-481 & EIA-541.
330. 00
12.992
MAX.
NOTES :
1. CONT ROLLING DIMENS IO N : MILLIM ETER.
2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .5 6 6
12.40 ( .4 8 8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
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