Page 1
PD - 9.1247C
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S
S
S
1
2
3
4
Top V ie w
IRF7406
HEXFET® Power MOSFET
A
8
D
7
D
6
D
5
DG
SO-8
R
DS(on)
V
DSS
= -30V
= 0.045Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -10V -6.7
@ TA = 25°C Continuous Drain Current, VGS @ -10V -5.8
I
D
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.7
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt -1.3 V/ns
T
J, TSTG
Pulsed Drain Current -23
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 50
°C/W
A
8/8/97
Page 2
IRF7406
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.020 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 3.1 ––– ––– S VDS = -15V, ID = -2.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– –– – -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
Total Gate Charge ––– ––– 59 ID = -2.8A
Gate-to-Source Charge ––– ––– 5.7 nC VDS = -2.4V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = -10V, See Fig. 6 and 12
Turn-On Delay Time ––– 1 6 ––– VDD = -15V
Rise Time ––– 3 3 ––– ID = -2.8A
Turn-Off Delay Time ––– 4 5 ––– RG = 6.0Ω
Fall Time ––– 47 ––– RD = 5.3Ω, See Fig. 10
Internal Drain Inductance ––– 2.5 –––
Internal Source Inductance ––– 4.0 –––
Input Capacitance ––– 1100 ––– VGS = 0V
Output Capacitance ––– 490 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz, See Fig. 5
= 25°C (unless otherwise specified)
J
––– ––– 0.045 V
––– ––– 0.070 VGS = -4.5V, ID = -2.4A
––– ––– -1.0 V
––– ––– -25 V
Ω
µA
nA
= -10V, ID = -2.8A
GS
= -24V, VGS = 0V
DS
= -24V, VGS = 0V, TJ = 125°C
DS
= 20V
GS
ns
Between lead tip
nH
and center of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -3.1
––– ––– -23
Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -2.8A
Reverse RecoveryCharge – –– 64 96 µ C di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ -2.8A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
Page 3
IRF7406
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BO T T OM - 4. 5V
100
-4.5V
10
D
-I , D rain-to-Sou rce C urrent (A)
20 µs P ULSE WIDT H
T = 25 °C
1
0.1 1 10 10 0
-V , Drain - to-S o urc e Voltag e (V )
DS
J
A
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT O M - 4.5V
100
-4.5V
10
D
-I , Dra in-to-S ou rc e C u rren t (A )
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 100
-V , Drain-to-So urc e V oltag e (V )
DS
J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1000
2.0
I = -4. 7 A
D
A
T = 25°C
100
D
-I , D rain-to -So urce Current (A)
10
45678910
-V , Gate-to-Source Voltage (V)
GS
J
T = 150°C
J
V = -1 5 V
DS
20µs PULSE WID TH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rma lized )
0.5
DS(on)
R , Dra in-to-So urc e O n R e s istan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em peratu re ( °C )
J
V = -10 V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRF7406
2500
2000
1500
1000
V = 0V, f = 1MH z
GS
C = C + C , C S HORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, C apac itance (pF)
C
500
0
1 10 100
rs s
-V , D rain- to-Sourc e V oltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = -2.8A
D
V = -2 4V
DS
16
12
8
4
GS
-V , Ga te-to-Sourc e V oltage (V)
FOR TEST CIRCUIT
A
0
0204060
Q , Total Ga te C harg e (nC)
G
SEE FIGUR E 1 2
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150°C
J
1
SD
-I , R eve rse D ra in C u rren t (A)
0.1
0.3 0.6 0.9 1.2
-V , Source-to-Drain Voltage (V )
SD
T = 25 °C
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100us
10
1ms
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
A
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRF7406
+
-
6.0
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJA A
Page 6
IRF7406
-10V
Q
GS
V
G
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GD
12V
.2µF
V
GS
-3mA
.3µF
D.U.T .
V
DS
+
I
D
Charge
I
G
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Page 7
IRF7406
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
**
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
R
G
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
-
D =
G
P.W.
Period
+
VGS=10V
[ ] ***
*
V
DD
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Diode Recovery
Body Diode Forward Drop
Fig 13. For P-Channel HEXFETS
di/dt
dv/dt
V
DD
[ ]
I
[ ]
SD
Page 8
IRF7406
IRF7406
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
DIM
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
6.46 ( .255 )
1.27 ( .050 )
3X
INCHES MILLIMETERS
MIN MAX MIN MAX
0.72 (.028 )
8X
1.78 (.070)
8X
Part Marking Information
SO-8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CTIFIE R
L OG O
F7 101
TOP
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W A F E R
PART NUMBER
LOT C OD E
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
IRF7406
TERMIN ATION
NUMBER 1
1
FE ED DIRECTION
330.00
(13.000)
MAX.
2.05 (.080)
1.95 (.077)
8.10 (.318)
7.90 (.311)
13.20 (.519)
12.80 (.504)
4.10 (.161)
3.90 (.154)
1.60 (.062)
1.50 (.059)
6.50 (.255)
6.30 (.248)
1.85 (.072)
1.65 (.065)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
1 5.40 ( . 60 7)
1 1.90 ( . 46 9)
2
5.30 (.208)
5.10 (.201)
50.00
(1.969)
MIN.
0.35 (.013)
0.25 (.010)
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
18.40 (.724)
NOTE S:
1 CONFORMS TO EIA -481- 1
2 INCLUDES FLANGE DISTORTION @ OUTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CON TROLLING DIMENSION : METRIC
14.40 (.566)
12.40 (.448)
3
M AX
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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