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l Generation V Technology
A
l Ultra Low On-Resistance
l N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
S
S
S
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
1
2
3
4
Top V iew
PD - 93851A
IRF7402
HEXFET® Power MOSFET
A
8
D
V
= 20V
R
DS(on)
DSS
= 0.035Ω
7
D
6
D
5
DG
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.4 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 54
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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2/22/00
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IRF7402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.035 VGS = 4.5V, ID = 4.1A
––– 0.050 VGS = 2.7V, ID = 3.5A
Ω
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 6.1 ––– ––– S VDS = 10V, ID = 1.9A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 14 22 ID = 3.8A
Gate-to-Source Charge ––– 2.0 3.0 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12
Turn-On Delay Time ––– 5.1 ––– VDD = 10V
Rise Time ––– 47 – –– ID = 3.8A
Turn-Off Delay Time ––– 24 ––– RG = 6.2Ω
ns
Fall Time ––– 32 ––– RD = 2.6Ω
Input Capacitance ––– 650 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
2.5
––– ––– 54
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 3.8A, VGS = 0V
Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 3.8A
Reverse Recovery Charge ––– 69 100 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
≤ 3.8A, di/dt ≤ 96A/µs, V
SD
TJ ≤ 150°C
DD
≤ V
(BR)DSS
,
This data sheet has curves & data from IRF7601
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com
D
S
Page 3
IRF7402
)
A
)
A
)
A
)
A
100
VGS
TO P 7. 5V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
BOTTOM 1.5V
10
1
D
I , Drain-to-Source C urrent (A)
20µs PULSE WIDTH
1.5V
T = 25° C
0.1
0.1 1 10
V , Dra in- to -S o u rc e V o ltage (V
DS
100
J
100
VGS
TO P 7. 5V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
BOTTOM 1.5V
10
1
D
I , Drain-to-Source C urrent (A)
1.5V
20µs PULSE WIDTH
T = 150°C
0.1
0.1 1 10
V , Dra in- to -S o u rc e V o ltage (V
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I = 3.8 A
D
1.5
10
T = 150°C
J
1.0
T = 25°C
1
D
I , D rain-to- S ou rce C u rren t (A )
0.1
1.5 2.0 2.5 3.0 3.5
J
V = 10V
DS
20µs PULSE WIDTH
V , Gate -to-S o urce Vo ltage (V
GS
Fig 3. Typical Transfer Characteristics
(Norm alized)
0.5
DS(on)
R , D r ain -to- S ou r c e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C
J
Fig 4. Normalized On-Resistance
V = 4.5 V
GS
Vs. Temperature
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Page 4
IRF7402
)
A
g
g
g
A
)
A
1200
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss
C = C
C = C + C
C
iss
C
oss
C
rss
V , Drai n-to -So urce Voltage (V
DS
s gd d s
rss
d
oss ds
d
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I = 3.8 A
D
V = 16 V
DS
8
6
4
2
GS
V , G a te-to -S o u rc e Volta g e (V)
FOR TEST CIRCU IT
0
0 4 8 12 16 20 24
Q , To ta l Ga te C h a rge (nC
G
SE E F IG U R E 9
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150°C
J
T = 25°C
J
1
SD
I , Re ve r se D r ain Curren t ( A )
0.1
0.4 0.8 1.2 1.6 2.0 2.4
V , Source-to-Drain V oltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
GS
100
100us
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
IRF7402
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
R
V
DS
V
GS
R
G
D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
-
DD
100
D = 0.50
thJC
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 6
IRF7402
0.02
0.03
0.04
0.05
2468
A
D
GS
V , Gate-to-Source Voltage (V)
I = 5.7A
4.5V
Q
GS
V
G
Current Regulator
Same Type as D.U.T .
50KΩ
Q
G
Q
GD
12V
.2µF
V
GS
3mA
.3µF
D.U.T .
+
V
DS
-
Charge
Fig 12a. Basic Gate Charge Waveform
0.3
0.2
0.1
, Drain-to-Source On Resistance ( Ω )
DS(on)
R
0.0
03691215
I , Drain Current (A)
D
VGS = 2.5V
VGS =5V
, Drain-to-Source On Resistance ( Ω )
DS(on)
R
A
I
G
Current Sampling Resistors
I
D
Fig 12b. Gate Charge Test Circuit
D
Fig 13. Typical On-Resistance Vs. Drain
Current
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Fig 14. Typical On-Resistance Vs. Gate
Voltage
Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.01 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS AR E SHO W N IN MILLIMET ER S (INCHES).
4. OUTL INE C ON FO R M S TO J E DE C OUTL IN E M S-01 2AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D P ROT RU SION S N OT T O EX C EED 0 .2 5 (.0 06).
DIMENSIONS IS THE LE NG TH O F LE AD FOR SOLD ER ING TO A SUBSTRATE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7402
IN CHES M IL L IME TERS
DIM
MIN MA X MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .007 5 .0 0 9 8 0 .1 9 0 . 2 5
D .189 .196 4.80 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .2 7 B A S IC
e1 .02 5 B ASIC 0 .635 BASIC
H .228 4 .2 4 4 0 5 .8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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Page 8
IRF7402
(
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
INC HES).
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
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