Datasheet irf7379 Datasheet

l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

S1

G1

S2

G2

HEXFET® Power MOSFET

N-CHANNEL MOSFET
1

2

3

4
P-CHANNEL MOSFET

Top View

PD - 91625

IRF7379

8

D1

7

D1

6

5

V

D2

D2

R

SO-8

N-Ch P-Ch

30V -30V

DSS

0.045Ω 0.090Ω

DS(on)

Absolute Maximum Ratings

Parameter

V

SD

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.8 -4.3

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.6 -3.4

I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 -5.0 V/ns
T

J, TSTG

Drain-to-Source Voltage 30 -30

Pulsed Drain Current  46 -34

Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

N-Channel P-Channel

Max.

Units

Thermal Resistance Ratings

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 50

°C/W

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A

12/8/98

IRF7379

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

t

V
∆V

R

V
g

I

DSS

I

GSS

Q
Q
Q

d(on)

t

r

t

d(off)

t

f

L
L

C
C
C

Parameter Min. Typ. Max. Units Conditions

(BR)DSS

(BR)DSS

DS(ON)

GS(th)

fs

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage
Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N- P –– — ±100 VGS = ± 20V

g

gs

gd

Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

D
S

iss

oss

rss

Internal Drain Inductace N - P — 4.0 — Between lead, 6mm (0.25in.) from
Internal Source Inductance N-P — 6.0 — package and center of die contact

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

N-Ch 30 — — V
P-Ch -30 — — V
N-Ch — 0.032 — Reference to 25°C, I
P-Ch — -0.037 — Reference to 25°C, I

— 0.038 0.045 V

N-Ch

— 0.055 0.075 VGS = 4.5V, ID = 4.9A 
— 0.070 0.090 V

P-Ch

— 0.130 0.180 V

V/°C

N-Ch 1.0 — — V
P-Ch -1.0 — — V
N-Ch 5.2 — — V
P-Ch 2.5 — — VDS = -24V, ID = -1.8A 
N-Ch — — 1.0 V
P-Ch — — -1.0 V
N-Ch — — 25 V

µA

P-Ch — — -25 V
N-Ch — — 25

P-Ch — — 25
N-Ch — — 2.9
P-Ch — — 2.9

nC

N-Ch — — 7.9
P-Ch — — 9.0
N-Ch — 6.8 —
P-Ch — 11 —
N-Ch — 21 —
P-Ch — 17 —
N-Ch — 22 —

ns

P-Ch — 25 —
N-Ch — 7.7 —
P-Ch — 18 —

nH

N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —

pF

N-Ch — 72 —
P-Ch — 93 —

= 0V, ID = 250µA

GS

V

= 0V, ID = -250µA

GS

= 10V, ID = 5.8A 

GS

Ω

= -10V, ID =- 4.3A 

GS

= -4.5V, ID =- 3.7A 

GS

= VGS, ID = 250µA

DS

V

= VGS, ID = -250µA

DS

= 15V, ID = 2.4A 

DS

S

= 24V, VGS = 0V

DS

= -24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

DS

= -24V, VGS = 0V, TJ = 125°C

DS

N-Channel
I

= 2.4A, VDS = 24V, VGS = 10V

D

P-Channel
I

= -1.8A, VDS = -24V, VGS = -10V

D

N-Channel

= 15V, ID = 2.4A, RG = 6.0Ω,

V

DD

= 6.2Ω

R

D

P-Channel
V

= -15V, ID = -1.8A, RG = 6.0Ω,

DD

RD = 8.2Ω

N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz

P-Channel
V

= 0V, VDS = -25V, ƒ = 1.0MHz

GS

= 1mA

D

= -1mA

D







Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 10 )

 N-Channel I

P-Channel I

≤ 2.4A, di/dt ≤ 73A/µs, V

SD

≤ -1.8A, di/dt ≤ 90A/µs, V

SD

DD

DD

≤ V

≤ V

N-Ch — — 3.1
P-Ch — — -3.1
N-Ch — — 46
P-Ch — — -34
N-Ch — — 1.0 T
P-Ch — — -1.0 T
N-Ch — 47 71
P-Ch — 53 80
N-Ch — 56 84
P-Ch — 66 99

, TJ ≤ 150°C

(BR)DSS

, TJ ≤ 150°C

(BR)DSS

A

= 25°C, IS = 1.8A, VGS = 0V 

J

V

= 25°C, IS = -1.8A, VGS = 0V 

J

N-Channel

ns

T

= 25°C, IF = 2.4A, di/dt = 100A/µs

J

P-Channel 

nC

= 25°C, IF = -1.8A, di/dt = -100A/µs

T

J

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 10sec.

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N-Channel

A

A

)

A

µ

A

IRF7379

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

4.5V

10

D

I , Dra in-to -S o urc e C u rren t (A )

20µs PULSE WIDTH
T = 25 °C

1

0.1 1 10 100

V , Drain-to -Sourc e V o lta ge (V )

DS

J

Fig 1. Typical Output Characteristics

100

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

4.5V

10

D

I , D ra in- to-Sou rc e C u rre n t (A)

20µs PULSE WIDTH
T = 150°C

1

0.1 1 10 100

V , Dra in-t o- S o u rc e V o ltage (V )

DS

J

Fig 2. Typical Output Characteristics

100

T = 25°C

J

T = 150°C

J

D

I , Dr a in-to - S ou rce Cu r rent (A)

10

45678910

V , Gate-to-Source Voltage (V

GS

V = 1 5V

DS

20

s PULSE W IDTH

Fig 3. Typical Transfer Characteristics

10

T = 150°C

J

1

SD

I , R e v er s e Dra in Cu rre n t (A )

0.1

0.0 0.5 1.0 1.5 2.0 2.5

V , Source-to-Drain Voltage (V)

SD

T = 25°C

J

V = 0V

Fig 4. Typical Source-Drain Diode

GS

Forward Voltage

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IRF7379

A

N-Channel

2.0

I = 4 . 0 A

D

1.5

1.0

(N or m a liz ed )

0.5

DS(on)

R , D ra in- to-Sou rc e On R e s ista nc e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

Fig 5. Normalized On-Resistance

Vs. Temperature

0.08

( Ω )

V = 10 V

GS

0.20

( Ω )

0.16

0.12

VGS = 4.5V

0.08

VGS = 10V

0.04

DS (on)

0.00

R , Drain-to-Source On Resistance

2 4 6 8 10

I , Drain Current (A)

D

Fig 6. Typical On-Resistance Vs. Drain

Current

0.07

0.06

0.05

ID = 5.8A

0.04

DS (on)

0.03

R , Drain-to-Source On Resistance

0 4 8 12 16

V , Gate-to-Source Voltage (V)

GS

Fig 7. Typical On-Resistance Vs. Gate

Voltage

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N-Channel

A

A

)

IRF7379

1000

800

600

400

V = 0 V , f = 1M H z

GS

C = C + C , C SHORT ED

iss gs gd d s

C = C

rss gd

C = C + C

oss ds g d

C

iss

C

oss

C, Capacitance (pF)

200

0

1 10 100

C

rss

V , Drain-to-Source V oltage (V)

DS

Fig 8. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = 2.4A

D

V = 24 V

DS

16

12

8

4

GS

V , Ga te -to- S o u rc e Volta ge (V)

FOR TEST CIRCU IT

0

0 5 10 15 20 25

Q , T ota l Gate C h a rg e ( n C )

G

SE E FIG U R E 1 1

Fig 9. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

0.20

10

0.10

0.05
P

1 2

DM

t

1

t

2

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7379

A

)

A

)

A

)

A

)

P-Channel

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BOTTOM - 4.5V

10

D

-I , Dra in- to -Sou rc e Cur re n t ( A )

-4.5V

20µs PULSE WIDTH
T = 25°C

1

0.1 1 1 0 100

-V , D ra in-to -So u rce V oltage (V

DS

J

Fig 11. Typical Output Characteristics

100

100

VGS
TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V
BOTTO M - 4.5V

10

D

-I , D rain-to-Source Current (A)

-4 .5V

20µs PULSE W IDTH
T = 150°C

1

0.1 1 10 10 0

-V , D ra in -to -Sour c e V o ltage (V

DS

J

Fig 12. Typical Output Characteristics

100

T = 2 5 °C

J

T = 15 0°C

J

10

D

-I , D ra in-to -Sou rc e C u rre n t (A )

1

45678910

-V , G a te -to -S o u rc e V o ltage (V

GS

V = -15 V

DS

20µs PULSE W IDTH

Fig 13. Typical Transfer Characteristics

10

T = 150°C

J

T = 25°C

J

1

SD

-I , Re ve rs e D ra in C u rre n t (A )

0.1

0.0 0.3 0.6 0.9 1.2 1.5

-V , So u rc e -to -D ra in V o ltage (V

SD

V = 0V

Fig 14. Typical Source-Drain Diode

GS

Forward Voltage

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P-Channel

)

A

IRF7379

2.0

I = -3 .0A

D

1.5

1.0

(N o rma lized)

0.5

DS (on)

R , Dra in-to -Sourc e On R e sis ta n ce

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C

J

Fig 15. Normalized On-Resistance

Vs. Temperature

0.16

( Ω )

V = - 1 0 V

GS

0.50

( Ω )

0.40

0.30

VGS = -4.5V

0.20

0.10

DS (on)

0.00

R , Drain-to-Source On Resistance

0 2 4 6 8 10 12 14

-I , Drain Current (A)

D

VGS = -10V

Fig 16. Typical On-Resistance Vs. Drain

Current

0.14

0.12

0.10

ID = -4.3A

0.08

DS (on)

0.06

R , Drain-to-Source On Resistance

0 4 8 12 16

-V , Gate-to-Source Voltage (V)

GS

Fig 17. Typical On-Resistance Vs. Gate

Voltage

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IRF7379

A

)

g

g

g

A

)

P-Channel

1000

800

600

400

V = 0 V, f = 1 MHz

GS

C = C + C , C S HO R T E D

iss

C = C
C = C + C

s gd d s

d

rss
os s d s

C

iss

C

oss

d

C, Capacitance (pF)

200

0

1 10 100

C

rss

-

-V , Drain-to-Source Voltage (V

DS

Fig 18. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = - 3.0A

D

V = -24V

DS

16

12

8

4

GS

-V , G a te -to- S ou rc e V o lta ge (V )

FOR TEST CIRCUIT

0

0 5 10 15 20 25

Q , To ta l Gate C h a rg e (n C)

G

SE E F IG U RE 2 2

Fig 19. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

0.20

10

0.10

0.05
P

1 2

DM

t

1

t

2

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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Package Outline

SO8 Outline

D

5

- B -

8 7 6 5

5

E

- A ­1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004)

K x 45°

θ

6

L
8X

C
8X

IRF7379

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028 )
8X

6.46 ( .255 )

1.27 ( .050 )
3X

1.78 (.070)
8X

Part Marking Information

SO8

E X A MP L E : T H IS IS AN IRF 7 1 0 1

DATE CODE (YWW )
Y = LAST DIGIT OF THE YEAR

312

INTERNA TIONA L

F7101

R E CT IF IE R
L OG O

TOP

www.irf.com 9

WW = WEEK

PART NUMBER

W A F E R
LOT CODE
(LAST 4 DIGITS)

XXXX

BOTTOM

IRF7379

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUM B ER 1

12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFOR MS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CO NFORM S TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 12/98

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