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MOSFET / Schottky Diode
● Co-Pack HEXFET
®
Power MOSFET and
Schottky Diode
● Ideal For Buck Regulator Applications
● N-Channel HEXFET power MOSFET
● Low V
● Generation 5 Technology
● SO-8 Footprint
Schottky Rectifier
F
A
A
S
G
FETKY
1
2
3
4
Top View
Description
The FETKY family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
PD- 93809
IRF7353D2
8
K
7
K
6
D
5
D
V
DSS
R
DS(on)
= 0.029Ω
Schottky V
SO-8
= 30V
= 0.52V
F
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current ➃ 6.5 A
ID @ TA = 70°C 5.2
I
DM
PD @TA = 25°C Power Dissipation ➃ 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ 52
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
Junction-to-Ambient 62.5 °C/W
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ Starting T
➂ I
SD
= 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
J
≤ 4.0A, di/dt ≤ 74A/µs, V
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
➃ Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7353D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
I
F (av)
I
SM
Schottky Diode Electrical Specifications
V
FM
I
rm
C
t
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance — 0.023 0.029 VGS = 10V, ID = 5.8A
— 0.032 0.046 VGS = 4.5V, ID = 4.7A
Ω
Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
Forward Transconductance — 14 — S VDS = 24V, ID = 5.8A
Drain-to-Source Leakage Current — — 1.0 VDS = 24V, VGS = 0V
——25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage — — 100 VGS = 20V
Gate-to-Source Reverse Leakage — — -100 VGS = -20V
µA
nA
Total Gate Charge — 22 33 ID = 5.8A
Gate-to-Source Charge — 2.6 3.9 nC VDS = 24V
Gate-to-Drain ("Miller") Charge — 6.4 9.6 VGS = 10V (see figure 8)
Turn-On Delay Time — 8.1 12 VDD = -5V
Rise Time — 8.9 13 ID = 1.0A
Turn-Off Delay Time — 26 39 RG = 6.0Ω
ns
Fall Time — 18 26 RD = 15Ω
Input Capacitance — 650 — VGS = 0V
Output Capacitance — 320 — pF VDS = 25V
Reverse Transfer Capacitance — 130 — ƒ = 1.0MHz (see figure 7)
Continuous Source Current (Body Diode) — — 2.5 A
Pulsed Source Current (Body Diode) — — 30
Body Diode Forward Voltage — 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time (Body Diode) — 45 68 ns TJ = 25°C, IF = 1.7A
Reverse Recovery Charge — 58 87 nC di/dt = 100A/µs ➂
Parameter Max. Units Conditions
Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25°C
A
2.0 50% Duty Cycle. Rectangular Wave, Tc = 70°C
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
0.77 If = 6.0, Tj = 25°C
V
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C .
Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C
mA
37 Tj = 125°C
Max. Junction Capacitance 310 pF Vr = 5Vdc (100kHz to 1 MHz) 25°C
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Power MOSFET Characteristics
A
A
ge (V)
A
IRF7353D2
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
D
I , Drain-to-Source Current (A)
3.0V
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
2.0
I =
D
5.8A
1.5
1.0
10
T = 25°C
J
T = 150°C
J
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
1
3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Volta
GS
Fig 3. Typical Transfer Characteristics
V = 10V
DS
20µs PULSE WIDTH
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
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V =
GS
°
10V
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IRF7353D2
A
A
)
A
g
g
g
Power MOSFET Characteristics
0.040
V = 4.5V
GS
V = 10V
GS
I , Drain Current (A)
D
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.036
0.032
0.028
0.024
0.020
0 10203040
Fig 5. Typical On-Resistance Vs. Drain
Current
1200
900
V = 0V, f = 1MHz
GS
C = C + C , C S H O RT E D
C = C
C = C + C
s gd d s
is s
rss
d
oss ds
C
iss
d
0.12
0.10
0.08
0.06
I = 5.8A
0.04
0.02
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.00
0 3 6 9 12 15
V , Gate-to-Source Voltage (V)
GS
D
Fig 6. Typical On-Resistance Vs. Gate
Voltage
20
I =D5.8A
V = 15V
DS
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12
8
600
C
oss
C, Capacitance (pF)
300
0
1 10 100
C
rss
V , Dra in -to -So ur c e V o ltage (V
DS
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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100
A
IRF7353D2
Power MOSFET Characteristics
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
T = 150°C
10
SD
I , Reverse Drain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
J
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D2
)
)
Schottky Diode Characteristics
100
10
F
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
100
T = 150 °C
10
(mA)
R
1
0.1
0.01
Reverse Current - I
0.001
0 5 10 15 20 25 30
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
160
140
120
100
80
60
D = 3/4
D = 1/2
40
D =1/3
D = 1/4
20
D = 1/5
Allowable Am bient Temperature - (°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forwa rd Curren t - I (A
J
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - V (V)
R
Voltage
V = 80 % Rated
r
R = 62.5° C /W
thJA
Square wave
A
DC
A
F(AV)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIME NS IONS AR E SH OW N IN M IL L IMETERS ( IN CH ES).
4. OUTLIN E C ONFORM S T O JEDE C O UTLIN E MS-0 1 2A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PRO T RUS ION S NO T TO EX C EED 0.25 ( .0 06 ).
DIMEN S IO NS IS THE L ENG T H OF LE AD F OR S OL D E RIN G TO A S UBS TR AT E..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7353D2
IN CH ES MILLIMETE RS
DIM
MIN MAX MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4 .8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .27 BA SIC
e1 .0 2 5 BAS IC 0 .6 3 5 BAS IC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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IRF7353D2
SO-8 Tape and Reel
NOTES:
1. CONTROLLING DIM ENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN M ILLIMETER S(IN CHES).
3. OUTLINE CON FO R M S TO EIA-481 & EIA-541.
TERMINAL NUMBER 1
8.1 ( .318 )
7.9 ( .312 )
330.00
(12.992)
MAX.
12.3 ( .484 )
11.7 ( .461 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
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14.40 ( .566 )
12.40 ( .488 )
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 11/99
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