Datasheet irf7350 Datasheet

PD - 94226B

IRF7350

HEXFET® Power MOSFET

l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape and Reel

S1

G1

S2

G2

N-CHANNEL MOSFET 1

2

3

4

P-CHANNEL MOSFET

8

D1

7

D1

6

5

V

D2

R

N-Ch P-Ch

100V -100V

DSS

0.21Ω 0.48Ω

DS(on)

Top View

Description

These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET

®

power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be

SO-8

used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings

Parameter

V

DS

Drain-to-Source Voltage 100 -100

N-Channel P-Channel

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.1 -1.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.7 -1.2 I

DM

Pulsed Drain Current  8.4 -6.0

PD @TA = 25°C Power Dissipation 2.0 W

Linear Derating Factor 0.016 W/°C

E

AS

V

GS

Single Pulse Avalanche Energy 35 51 mJ Gate-to-Source Voltage ± 20 ± 20 V

dv/dt Peak Diode Recovery dv/dt  4.0 4.3 V/ns

T

J, TSTG

Junction and Storage Temperature Range

Max.

-55 to + 150

Units

°C

A

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 62.5 °C/W

www.irf.com 1

08/09/01

IRF7350

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V Total Gate Charge

Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 100 —— V P-Ch -100 —— VGS = 0V, ID = -250µA N-Ch — 0.12 — Reference to 25°C, ID = 1mA P-Ch — -0.11 — Reference to 25°C, I

N-Ch P-Ch

—

——— 0.48

V/°C

0.21

N-Ch 2.0 — 4.0 V P-Ch -2.0 — -4.0 VDS = VGS, ID = -250µA N-Ch 2.4 —— V P-Ch 1.1 —— V N-Ch ——25 V P-Ch ——-25 VDS = -100V, VGS = 0V  N-Ch ——250 VDS = 80 V , VGS = 0V, TJ = 70°C

µA

P-Ch ——-250 V N-Ch — 19 28

P-Ch — 21 31 N-Ch — 3.0 4.5 P-Ch — 3.4 5.1

nC

N-Ch — 8.8 13 P-Ch — 10 16 N-Ch — 6.7 — P-Ch — 25 — N-Ch — 11 — P-Ch — 13 — N-Ch — 35 —

ns

P-Ch — 30 — N-Ch — 20 — P-Ch — 40 — N-Ch — 380 — P-Ch — 360 — N-Ch — 100 — P-Ch — 110 —

pF

N-Ch — 54 — P-Ch — 65 —

= 0V, ID = 250µA

GS

V

= 10V, ID = 2.1A 

V

GS

Ω

V

= -10V, ID = -1.5A 

GS

= VGS, ID = 250µA

DS

V

= 50V, ID = 2.1A

DS

S

= -50V, ID = -1.5A

DS

= 100V, VGS = 0V 

DS

= -80V, VGS = 0V, TJ = 70°C

DS

N-Channel

= 2.1A, VDS = 80V, VGS = 10V

I

D

P-Channel ID = -1.5A, VDS = -80V, VGS = -10V

N-Channel

= 50V, ID = 1.0A, RG = 22Ω,

V

DD

RD = 50Ω, VGS = 10V P-Channel

VDD = -50V, ID = -1.0A, RG = 22Ω, RD = 50Ω, VGS = -10V

N-Channel

= 0V, VDS = 25V, ƒ = 1.0MHz

V

GS

P-Channel V

= 0V, VDS = -25V, ƒ = 1.0MHz

GS

= -1mA

D



Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in square Cu board

N-Ch ——1.8 P-Ch ——-1.4 N-Ch ——8.4

A

P-Ch ——-6.0 N-Ch ——1.3 T P-Ch ——-1.6 TJ = 25°C, IS = -1.4A, VGS = 0V  N-Ch — 72 110 P-Ch — 77 120 N-Ch — 205 310 P-Ch — 240 360

 N channel: Starting T

P channel: Starting T

= 25°C, IS = 1.8A, VGS = 0V 

J

V

N-Channel

ns

T

= 25°C, IF = 1.8A, di/dt = 100A/µs

J

P-Channel 

nC

T

= 25°C, IF = -1.4A, di/dt = -100A/µs

J

= 25°C, L = 4.0mH, RG = 25Ω, I

J

= 25°C, L = 11mH, RG = 25Ω, I

J

AS

= -3.0A

AS

= 4.2A

2 www.irf.com

(

)

N-CHANNEL

IRF7350

100

10

1

0.1

, Drain-to-Source Current (A)

D

I

VGS TOP 15V 10V

7.0V

6.0V

5.5V

5.0V

4.5V BOTTOM 4.0V

4.0V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10.00

100

10

1

VGS TOP 15V 10V

7.0V

6.0V

5.5V

5.0V

4.5V BOTTOM 4.0V

4.0V

0.1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 150°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

2.1A

I =



D

)

(Α

TJ = 150°C

1.00

TJ = 25°C

0.10

, Drain-to-Source Current

D

I

0.01

3.0 4.5 6.0 7.5 9.0

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

C

Vs. Temperature

www.irf.com 3

IRF7350

)

N-CHANNEL

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

Ciss

100

C, Capacitance(pF)

10

1 10 100

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10.00

SHORTED

ds

12

D

I =

2.1A



10

7

5

2

GS

V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20

Q , Total Gate Charge (nC

G

V = 80V

DS

V = 50V

DS



V = 20V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

TJ = 150°C

1.00

100µsec

TJ = 25°C

1msec

10msec

, Reverse Drain Current (A)

SD

I

0.10

0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

1

, Drain-to-Source Current (A)

D

I

Tc = 25°C Tj = 150°C Single Pulse

0.1 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

N-CHANNEL

IRF7350

2.5

2.0

1.5

1.0

D

I , Drain Current (A)

0.5

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)



0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

P

DM

t



1 2

1

t

2

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7350

N-CHANNEL

)

0.40

Ω

0.30

0.20

0.10

, Drain-to -Source On Resistance (

DS(on)

0.00

R

4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0

V

Gate -to -Source Voltage (V)

GS,

ID = 2.1A

Fig 12. Typical On-Resistance Vs. Gate

Voltage

4.0

)

0.18

Ω

0.17

V

= 10V

GS

0.16

, Drain-to-Source On Resistance (

DS (on)

R

0.15 0246810

ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

70

60

3.5

3.0

Gate threshold Voltage (V)

2.5

GS(th)

V

2.0

-75 -50 -25 0 25 50 75 100 125 150

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Typical Threshold Voltage Vs.

50

40

30

Power (W)

20

10

0

1.00 10.00 100.00 1000.00

Time (sec)

Fig 15. Typical Power Vs. Time

Junction Temperature

6 www.irf.com

A

N-CHANNEL

IRF7350

100

TOP

80

60

40

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J



BOTTOM

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

I

D

1.9A

3.4A

4.2A

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

15V

DRIVER

+

-

V

DD

Fig 16c. Unclamped Inductive Test Circuit

°

V

(BR)DSS

t

p

I

AS

Fig 16d. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

Fig 17. Gate Charge Test Circuit

V

GS

+

V

DS

-

Q

GS

V

G

Fig 18. Basic Gate Charge Waveform

G

Q

GD

Charge

www.irf.com 7

IRF7350

10

Duty Cycle = Single Pulse

N-CHANNEL

1

0.01

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to

0.1

Avalanche Current (A)

0.01

0.001

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

0.05

0.10

avalanche losses

tav (sec)

Fig 19. Typical Avalanche Current Vs.Pulsewidth

40

TOP Single Pulse BOTTOM 10% Duty Cycle ID = 4.2A

30

20

, Avalanche Energy (mJ)

10

AR

E

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

Fig 20. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

∆∆

I

2

∆T/ [1.3·BV·Zth]

∆∆

av =

E

AS (AR)

= P

·f

av

D (ave)·tav

∆∆

∆T/ Z

∆∆

thJC

jmax

is

8 www.irf.com

P-CHANNEL

(

)

IRF7350

100

10

1

0.1

, Drain-to-Source Current (A)

0.01

D

-I

VGS

TOP -15V

-10V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V BOTTOM -4.0V

-4.0V

20µs PULSE WIDTH Tj = 25°C

0.001

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 21. Typical Output Characteristics

10.00

100

10

1

0.1

, Drain-to-Source Current (A)

D

-I

VGS

TOP -15V

-10V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V BOTTOM -4.0V

-4.0V

20µs PULSE WIDTH Tj = 150°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 22. Typical Output Characteristics

2.5

-1.5A

I =



D

)

(Α

1.00

TJ = 25°C

0.10

, Drain-to-Source Current

D

-I

0.01

4.0 6.0 8.0 10.0

-VGS, Gate-to-Source Voltage (V)

Fig 23. Typical Transfer Characteristics

TJ = 150°C

V

= -25V

DS

20µs PULSE WIDTH

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature

J

Fig 24. Normalized On-Resistance

V =

C

-10V

GS

°



Vs. Temperature

www.irf.com 9

IRF7350

)

P-CHANNEL

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

oss

ds

+ Cgd, C

+ C

gd

Ciss

Coss

100

C, Capacitance(pF)

10

1 10 100

Crss

-VDS, Drain-to-Source Voltage (V)

Fig 25. Typical Capacitance Vs.

Drain-to-Source Voltage

10.00

SHORTED

ds

12

D

I =

-1.5A



10

7

5

2

GS

-V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25

Q , Total Gate Charge (nC

G

V = 80V

DS

V = 50V

DS



V = 20V

DS

Fig 26. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

TJ = 150°C

1.00

100µsec

TJ = 25°C

, Reverse Drain Current (A)

SD

-I

0.10

0.2 0.4 0.6 0.8 1.0 1.2

-VSD, Source-toDrain Voltage (V)

Fig 27. Typical Source-Drain Diode

1

, Drain-to-Source Current (A)

D

Tc = 25°C

-I

0.1

Tj = 150°C Single Pulse

V

= 0V

GS

1 10 100 1000

-V

, Drain-toSource Voltage (V)

DS

Fig 28. Maximum Safe Operating Area

1msec

10msec

Forward Voltage

10 www.irf.com

P-CHANNEL

IRF7350

2.0

1.6

1.2

0.8

D

-I , Drain Current (A)

0.4

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 29. Maximum Drain Current Vs.

Case Temperature

100

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)



0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

P

DM

t



1 2

1

t

2

Fig 30. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 11

IRF7350

P-CHANNEL

)

0.80

Ω

0.70

0.60

ID = -1.5A

0.50

0.40

, Drain-to -Source On Resistance (

DS(on)

0.30

R

5.0 7.0 9.0 11.0 13.0 15.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 31. Typical On-Resistance Vs. Gate

Voltage

4.0

0.500

)

Ω

0.475

0.450

V

= -10V

, Drain-to-Source On Resistance (

0.425

DS (on)

R

0.400 0 1 2 3 4 5 6

GS

-ID , Drain Current (A)

Fig 32. Typical On-Resistance Vs. Drain

Current

70

60

3.5

ID = -250µA

3.0

Gate threshold Voltage (V)

2.5

GS(th)

-V

2.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 33. Typical Threshold Voltage Vs.

50

40

30

Power (W)

20

10

0

1.00 10.00 100.00 1000.00

Time (sec)

Fig 34. Typical Power Vs. Time

Junction Temperature

12 www.irf.com

A

P-CHANNEL

(

)

IRF7350

120

TOP

96

72

48

24

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature

J



BOTTOM

Fig 35a. Maximum Avalanche Energy

Vs. Drain Current

C

I

-1.3A

-2.4A

-3.0A

°

D

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 35c. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 35d. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

Fig 36. Gate Charge Test Circuit

V

GS

+

V

DS

-

Q

GS

V

G

Fig 37. Basic Gate Charge Waveform

G

Q

GD

Charge

www.irf.com 13

IRF7350

10

Duty Cycle = Single Pulse

P-CHANNEL

1

0.01

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

0.1

0.05

0.10

- Avalanche Current (A)

0.01

0.001

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02

tav (sec)

Fig 38. Typical Avalanche Current Vs.Pulsewidth

60

TOP Single Pulse

50

40

30

20

, Avalanche Energy (mJ)

AR

E

10

0

25 50 75 100 125 150

BOTTOM 10% Duty Cycle ID = -3.0A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

D (ave)·tav

∆∆

∆T/ Z

∆∆

thJC

Fig 39. Maximum Avalanche Energy

Vs. Temperature

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

I

av =

E

AS (AR)

∆∆

2

∆T/ [1.3·BV·Zth]

∆∆

= P

14 www.irf.com

SO-8 Package Details

IRF7350

D B

8X b

5

65

4312

e1

A1

H

0.25 [.010]

A

C

0.10 [.004]

A

87

6

E

e

6X

0.25 [.010] C A B

NOTES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT LINE CONFORMS T O JE DEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0 .15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0 .25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

y

3X 1.27 [.050]

DIM

MIN MAX

A

.0532 A1 b c .0075 .0098 0.19 0.25 D E e

e1

H K L y

K x 45°

8X L

7

6.46 [.255]

.0688

.0040

.0098

.013

.020

.189

.1968

.1497

.1574 .050 BASIC .025 BASIC 0.635 BASIC .2284

.2440 .0099

.0196 .016

.050

0°

8°

8X c

FOOTPRINT

8X 0.72 [.028]

MILLIMETERSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27

0°

8°

8X 1.78 [.070]

SO-8 Part Marking

EXAM PLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (Y WW)

Y = LA ST DIGIT OF THE YEAR

YW W XXXX

INTER NATIONAL

F7101

RECT IFIER

LOGO

www.irf.com 15

WW = WEEK

LOT CODE

PART NUM BER

IRF7350

(

)

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENS ION : M ILLIMETER.

2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).

3. O UTLINE CON FORM S T O EIA-481 & EIA-541.

330. 00

12.992

MAX.

NOTES :

1. CO NTROLLING DIMENSION : MILLIM ETER.

2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

FEED DIRECTION

14.40 ( .5 6 6

12.40 ( .4 8 8

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 08/01

16 www.irf.com