Datasheet irf7343 Datasheet

l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

S1

G1

S2

G2

HEXFET® Power MOSFET

N-CHANNEL MOSFET
1

2

3

4

P-CHANNEL MOSFET

Top View

PD -91709

IRF7343

8

D1

7

D1

6

5

V

D2

D2

R

N-Ch P-Ch

55V -55V

DSS

0.050Ω 0.105Ω

DS(on)

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with

SO-8

dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.

Absolute Maximum Ratings

Parameter

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7
I

DM

PD @TA = 25°C Maximum Power Dissipation  2.0 W
PD @TA = 70°C Maximum Power Dissipation  1.3 W
E

AS

I

AR

E

AR

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 -5.0 V/ns
T

J, TSTG

Drain-Source Voltage 55 -55 V

Pulsed Drain Current  38 -27

Single Pulse Avalanche Energy 72 114 mJ
Avalanche Current 4.7 -3.4 A
Repetitive Avalanche Energy 0.20 mJ
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

N-Channel P-Channel Units

Max.

A

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient  ––– 62.5 °C/W

www.irf.com 1

2/24/99

IRF7343

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage
Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V
Total Gate Charge

Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 55 — — VGS = 0V, ID = 250µA
P-Ch -55 — — VGS = 0V, ID = -250µA
N-Ch — 0.059 — Reference to 25°C, ID = 1mA
P-Ch — 0.054 — Reference to 25°C, I

— 0.043 0.050 VGS = 10V, ID = 4.7A 

N-Ch

— 0.056 0.065 V
— 0.095 0.105 VGS = -10V, ID = -3.4A 

P-Ch

— 0.150 0.170 V
N-Ch 1.0 — — VDS = VGS, ID = 250µA
P-Ch -1.0 — — VDS = VGS, ID = -250µA
N-Ch 7.9 — — V
P-Ch 3.3 — — VDS = -10V, ID = -3.1A 
N-Ch — — 2.0 V
P-Ch — — -2.0 VDS = -55V, VGS = 0V
N-Ch — — 25 VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch — — -25 V

N-Ch — 24 36
P-Ch — 26 38
N-Ch — 2.3 3.4
P-Ch — 3.0 4.5
N-Ch — 7.0 10
P-Ch — 8.4 13
N-Ch — 8.3 12
P-Ch — 14 22
N-Ch — 3.2 4.8
P-Ch — 10 15
N-Ch — 32 48
P-Ch — 43 64
N-Ch — 13 20
P-Ch — 22 32
N-Ch — 740 —
P-Ch — 690 —
N-Ch — 190 — pF
P-Ch — 210 —
N-Ch — 71 —

V

V/°C

= 4.5V, ID = 3.8A 

GS

Ω

= -4.5V, ID = -2.7A 

GS

V

= 10V, ID = 4.5A 

DS

S

= 55V, VGS = 0V

DS

µA

= -55V, VGS = 0V, TJ = 55°C

DS

nA

N-Channel

= 4.5A, VDS = 44V, VGS = 10V

I

D

nC

P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V

N-Channel

= 28V, ID = 1.0A, RG = 6.0Ω,

V

DD

RD = 16Ω

ns

P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 16Ω

N-Channel

= 0V, VDS = 25V, ƒ = 1.0MHz

V

GS

P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz

P-Ch — 86 —

= -1mA

D





Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

 N-Channel I

P-Channel I

 N-Channel Starting T

P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, I

≤ 4.7A, di/dt ≤ 220A/µs, V

SD

≤ -3.4A, di/dt ≤ -150A/µs, V

SD

= 25°C, L = 6.5mH RG = 25Ω, I

J

DD

DD

N-Ch — — 2.0
P-Ch — — -2.0
N-Ch — — 38

A

P-Ch — — -27
N-Ch — 0.70 1.2 T
P-Ch — -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V 
N-Ch — 60 90
P-Ch — 54 80
N-Ch — 120 170
P-Ch — 85 130

= 25°C, IS = 2.0A, VGS = 0V 

J

V

N-Channel

ns

T

= 25°C, IF =2.0A, di/dt = 100A/µs

J

P-Channel 

nC

T

= 25°C, IF = -2.0A, di/dt = 100A/µs

J

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

≤ V

≤ V

(BR)DSS

(BR)DSS

AS

AS

, TJ ≤ 150°C

, TJ ≤ 150°C

= 4.7A.

= -3.4A.

 Surface mounted on FR-4 board, t ≤ 10sec.

2 www.irf.com

N-Channel

IRF7343

100

10

TOP

BOTTOM

VGS
15V
12V
10V

8.0V

4.5V

6.0V

4.0V

3.5V

3.0V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS
15V
12V
10V

8.0V

6.0V

4.5V

4.0V

3.5V

3.0V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

T = 150 C

J

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

3 4 5 6

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4

Fig 4. Typical Source-Drain Diode

J

°

T = 25 C

J

V = 0 V

GS

V ,Source-to-Drain Voltage (V)

SD

Forward Voltage

www.irf.com 3

IRF7343

N-Channel

2.5

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

4.7A

I =

D

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 5. Normalized On-Resistance

Vs. Temperature

0.12

0.10

V =

GS

°

10V

0.120

(Ω)

0.100

0.080

VGS = 4.5V

0.060

VGS = 10V

DS (on)

0.040

R , Drain-to-Source On Resistance

0 10 20 30 40

I , Drain Current (A)

D

Fig 6. Typical On-Resistance Vs. Drain

Current

200

TOP

160

BOTTOM

I

D

2.1A

3.8A

4.7A

120

0.08

80

I = 4.7A

0.06

, Drain-to-Source On Resistance ( Ω )

DS(on)

R

0.04
0246810

V , Ga te -t o - S ource V o ltage (V)

GS

Fig 7. Typical On-Resistance Vs. Gate

D

Voltage

40

AS

E , Single Pulse Avalanche Energy (mJ)

A

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

°

4 www.irf.com

N-Channel

IRF7343

1200

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED
C
C

+ C

C

iss

C

oss

C

rss

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

4.5A

D

V = 48V

DS

V = 30V

G

DS

V = 12V

DS

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7343

P-Channel

100

10

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-4.5V

-6.0V

-4.0V

-3.5V

-3.0V

-3.0V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 12. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-4.5V

-6.0V

-4.0V

-3.5V

-3.0V

-3.0V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 13. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

J

10

D

-I , Drain-to-Source Current (A)

V = -25V

DS

1

3 4 5 6 7

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 14. Typical Transfer Characteristics

10

°

T = 150 C

J

°

T = 25 C

1

SD

-I , Reverse Drain Current (A)

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 15. Typical Source-Drain Diode

Forward Voltage

6 www.irf.com

P-Channel

IRF7343

2.0

1.5

1.0

I =

D

-3.4 A

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 16. Normalized On-Resistance

Vs. Temperature

0.45

0.35

V =

GS

°

-10V

0.240

(Ω)

0.200

VGS = -4.5V

0.160

0.120

VGS = -10V

DS (on)

0.080

R , Drain-to-Source On Resistance

0 2 4 6 8 10 12

-I , Drain Current (A)

D

Fig 17. Typical On-Resistance Vs. Drain

Current

300

TOP

250

200

BOTTOM

I

D

-1.5A

-2.7A

-3.4A

0.25

I = -3.4 A

D

0.15

, Drain-to-Source On Resistance ( Ω )

DS(on)

R

0.05
2581114

-V , Gate-to - Sourc e V o lta ge ( V)

GS

Fig 18. Typical On-Resistance Vs. Gate

Voltage

A

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

°

www.irf.com 7

IRF7343

P-Channel

1200

960

720

480

C, Capacitance (pF)

240

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

-V , Drain-to-Source Voltage (V)

DS

-

f = 1MHz

C

+ C

C SHORTED
C
C

+ C

C

iss

C

oss

C

rss

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

-3.1A

GS

D

16

12

8

4

V =-48V

DS

V =-30V

DS

V =-12V

DS

-V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.1

0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

8 www.irf.com

Package Outline

SO8 Outline

D

5

- B -

8 7 6 5

5

E

- A ­1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004)

K x 45°

θ

6

L
8X

C
8X

IRF7343

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028 )
8X

6.46 ( .255 )

1.27 ( .050 )
3X

1.78 (.070)
8X

Part Marking Information

SO8

EXA M P LE : THIS IS AN IR F7 1 01

DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR

312

INTERNATIONAL

F7101

RECTIFIER
LO G O

TOP

www.irf.com 9

W W = W EEK

PART NUMBER

W AF E R
LOT C O D E
(LAST 4 DIGITS)

XXXX

BOTTOM

IRF7343

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .48 4 )

11.7 ( .46 1 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SH O W N IN MILLIMETERS(INCHES).

3. OUTLINE CONFO R M S TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 2/99

10 www.irf.com