Page 1
Co-packaged HEXFET Power
l
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low V
l SO-8 Footprint
Schottky Rectifier
F
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
PD- 94101
IRF7342D2
FETKY MOSFET & Schottky Diode
A
A
S
G
TM
1
2
3
4
Top View
8
K
V
= -55V
R
DS(on)
DSS
= 105mΩ
7
K
6
D
5
D
Schottky Vf = 0.61V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ -27
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
R
θJA
Notes:
Junction-to-Drain Lead, MOSFET ––– 20
Junction-to-Ambient , MOSFET ––– 62.5 °C/W
Junction-to-Ambient , SCHOTTKY ––– 62.5
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
≤ -3.4A, di/dt ≤ -150A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
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03/09/01
Page 2
IRF7342D2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
If (av) Max. Average Forward Current 3. 0 50% Duty Cycle. Rectangular Wave, TA = 57°C
I
SM
Schottky Diode Electrical Specifications
Vfm Max. Forward Voltage Drop 0.61 If = 3.0A, Tj = 25°C
Vrrm Max. Working Peak Reverse Voltage 60
Irm Max. Reverse Leakage Current 2.0 mA Vr = 60V Tj = 25°C
Ct Max. Junction Capacitance 14 5 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Drain-to-Source Breakdown Voltage -55 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 95 105 VGS = -10V, ID = -3.4A
––– 150 170 V
mΩ
= -4.5V, ID = -2.7A
GS
Gate Threshold Voltage -1.0 ––– ––– VVDS = VGS, ID = -250µA
Forward Transconductance 3.3 ––– ––– SVDS = -10V, ID = -3.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -2.0 VDS = -44V, VGS = 0V
––– ––– -25 VDS = -44V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 26 38 ID = -3.1A
Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 6 & 14
Turn-On Delay Time ––– 14 22 VDD = -28V
Rise Time ––– 10 15 ID = -1.0A
Turn-Off Delay Time ––– 43 64 RG = 6.0Ω
ns
Fall Time ––– 22 32 VGS = -10V,
Input Capacitance ––– 690 ––– VGS = 0V
Output Capacitance ––– 210 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– -2.0
Pulsed Source Current (Body Diode) ––– ––– -27
A
Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 54 80 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs
Parameter Max. Units Conditions
A
See Fig. 21
Max. peak one cycle Non-repetitive 49 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 70 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
0.76 If = 6.0A, Tj = 25°C
V
0.53 If = 3.0A, Tj = 125°C
0.65 If = 6.0A, Tj = 125°C
V
30 Tj = 125°C
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Page 3
Power Mosfet Characteristics
IRF7342D2
100
10
1
, Drain-to-Source Current (A)
D
-I
VGS
TOP -15V
-10V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
BOTTOM -2.5V
-2.5V
20µs PULSE WIDTH
0.1
0.1 1 10 100
Tj = 25°C
-VDS, Drain-to-Source Voltage (V)
100
100
10
1
, Drain-to-Source Current (A)
D
-I
0.1
0.1 1 10 100
VGS
TOP -15V
-10V
- 6.0V
-5.5V
-4.5V
-3.5V
-3.0V
BOTTOM - 2.5V
-2.5V
20µs PULSE WIDTH
Tj = 150°C
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-3.4 A
I =
D
°
T = 25 C
10
J
T = 150 C
°
J
1.5
1.0
(Normalized)
1
0.5
D
-I , Drain-to-Source Current (A)
V = -25V
DS
0.1
2.0 3.0 4.0 5.0 6.0 7.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-
-10V
Vs. Temperature
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Page 4
IRF7342D2
)
Power Mosfet Characteristics
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
-
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
-3.1A
D
16
12
8
4
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
V =-48V
DS
V =-30V
DS
V =-12V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on
10us
10
°
T = 150 C
J
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
Power Mosfet Characteristics
(
)
IRF7342D2
3.5
3.0
2.5
2.0
1.5
D
1.0
-I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100
THERMAL RESPONSE
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 6
IRF7342D2
Power Mosfet Characteristics
0.25
)
Ω
0.20
0.15
ID = -3.4A
0.10
, Drain-to -Source On Resistance (
DS(on)
R
0.05
3.0 5.0 7.0 9.0 11.0 13.0 15.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.35
)
Ω
0.30
0.25
VGS = -4.5V
0.20
0.15
, Drain-to-Source On Resistance (
VGS = -10V
0.10
DS ( on )
R
0.05
0.0 4.0 8.0 12.0 16.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
.2µF
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Fig 14b. Gate Charge Test Circuit
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Page 7
Power Mosfet Characteristics
IRF7342D2
2.0
1.8
1.6
( V )
GS(th)
1.4
-V
1.2
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
ID = -250µA
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
100
80
60
Power (W)
40
20
0
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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Page 8
IRF7342D2
Schottky Diode Characteristics
Re v e r se Curr en t - I (mA)
R
100
T = 150°C
J
10
1
0.1
0.01
0.001
0 102030405060
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - V (V)
R
100
F
T = 150°C
J
T = 125°C
J
10
T = 2 5°C
J
Fig. 18 - Typical Values of
Reverse Current Vs. Reverse Voltage
1000
Instantan e o u s Forward C ur re nt - I (A)
T
T = 25°C
J
100
1
0 0.4 0.8 1 .2 1 .6 2 2.4 2 .8
Fo r ward Voltage Dr op - V (V)
FM
Fig. 17 - Maximum Forward Voltage Drop
Characteristics
Jun ction Cap a citan ce - C (p F)
10
0 102030405060
Reverse Volta g e - V (V)
R
Fig. 19 - Typical Junction Capacitance
Vs. Reverse Voltage
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Page 9
IRF7342D2
Schottky Diode Characteristics
100
D = 0.50
thJA
0.20
10
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
J DM thJA A
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
180
P
DM
t
1
1 2
t
2
160
°C)
140
120
100
80
60
40
Allowable Ambient Temprature - (
20
0
DC
0 1 2 3 4 5 6
Average Forward Current - I
R
= 62.5 °C/W
thJA
see note (4)
quare wave ( D = 0.50)
S
80 % Rated VR applied
(A)
F(AV)
Fig.21 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Note (4) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
F(AV)
x VFM @ (I
REV
) x R
F(AV)
thJA
/ D) ;
;
R1
= 80% rated V
R
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Page 10
IRF7342D2
SO-8 Package Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOTES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFORMS T O JEDE C OU T LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOT PRINT
8X 0.72 [.02 8]
MILLIMETERSINCHE S
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF710 1 (MOSFET)
DATE CODE (Y WW)
Y = LA ST DIGIT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIF IER
LOGO
10 www.irf.com
WW = WEEK
LOT COD E
PART NUMBER
Page 11
(
)
)
)
)
)
)
)
SO-8 Tape and Reel
TER MIN AL N U MBER 1
12.3 ( .484
11.7 ( .461
IRF7342D2
8.1 ( .318
7.9 ( .312
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMEN SIO NS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUT LINE CO N F O RMS TO E IA-481 & EIA-541.
330.00
12.992
MAX.
NOTES :
1. CO NTRO LLING DIMENSIO N : MILLIM ETER.
2. OU TL INE CO NF O R M S TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
FEED DIREC TION
14.40 ( .566
12.40 ( .488
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
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