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PD -91859
IRF7342
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
S1
G1
S2
G2
1
2
3
4
Top View
8
D1
V
7
D1
6
D2
5
D2
R
DS(on)
= -55V
DSS
= 0.105Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A
I
DM
PD @TC = 25°C Power Dissipation 2.0
PD @TC = 70°C Power Dissipation 1.3
V
GS
V
GSM
E
AS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Drain- Source Voltage -55 V
Pulsed Drain Current -27
W
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 20 V
Gate-to-Source Voltage Single Pulse tp<10µs 30 V
Single Pulse Avalanche Energy 114
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 62.5 °C/W
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IRF7342
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 0.095 0.105 VGS = -10V, ID = -3.4A
––– 0.150 0.170 VGS = -4.5V, ID = -2.7A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -2.0 VDS = -55V, VGS = 0V
––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C
µA
nA
Total Gate Charge ––– 26 38 ID = -3.1A
Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 10
Turn-On Delay Time ––– 14 22 VDD = -28V
Rise Time ––– 10 15 ID = -1.0A
Turn-Off Delay Time ––– 43 64 RG = 6.0Ω
ns
Fall Time ––– 22 32 RD = 16Ω,
Input Capacitance ––– 690 ––– VGS = 0V
Output Capacitance ––– 210 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-2.0
-27
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 54 80 ns TJ = 25°C, IF = -2.0A
Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 20mH
J
= -3.4A. (See Figure 8)
AS
I
≤ -3.4A, di/dt ≤ -150A/µs, V
SD
DD
≤ V
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
When mounted on 1 inch square copper board, t<10 sec
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D
S
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IRF7342
100
10
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
-3.0V
1
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
10
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
-3.0V
-3.0V
1
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
100
°
T = 25 C
J
T = 150 C
J
10
D
-I , Drain-to-Source Current (A)
V = -25V
DS
1
3 4 5 6 7
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
10
°
T = 150 C
J
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 4. Typical Source-Drain Diode
Forward Voltage
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IRF7342
2.0
1.5
1.0
I =
D
-3.4 A
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.45
0.35
V =
GS
°
-10V
0.240
(Ω)
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
DS (on)
0.080
R , Drain-to-Source On Resistance
0 2 4 6 8 10 12
-I , Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Current
300
TOP
250
200
BOTTOM
I
D
-1.5A
-2.7A
-3.4A
0.25
I = -3.4 A
D
0.15
, Drain-to-Source On Resistance ( Ω )
DS(on)
R
0.05
2581114
-V , Ga te-to-Sourc e Vo ltage ( V )
GS
Fig 7. Typical On-Resistance Vs. Gate
Voltage
A
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
°
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IRF7342
gsg
1200
960
720
480
C, Capacitance (pF)
240
0
1 10 100
V
=
0V,
GS
C
=
iss
C
=
rssgd
C
=
oss dsgd
-V , Drain-to-Source Voltage (V)
DS
-
f = 1MHz
C
+ C
C SHORTED
+ C
C
C
C
d , ds
iss
oss
rss
C
C
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
-3.1A
GS
D
16
12
8
4
V =-48V
DS
V =-30V
DS
V =-12V
DS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.1
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7342
SO-8 Pac kage Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIME NS IONS AR E SHO W N IN MILL IMETERS (IN CH ES).
4. OUTLIN E C ONFORM S T O J ED E C O UTLIN E MS-0 1 2A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PROTRUSION S NOT TO EX C EED 0.2 5 (.0 06 ) .
DIMEN S ION S IS TH E LENGTH OF LE AD F OR S OL DER ING T O A S UBS TRA TE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IN CH ES M IL L IME TERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 .2 5
D .18 9 .19 6 4 .8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .27 BA S IC
e1 .0 2 5 BAS IC 0 .63 5 BA SIC
H .22 8 4 .24 4 0 5.8 0 6 .2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7342
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIME NSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCH ES).
3. O U TLINE CONFORM S T O EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OU TL INE CO N FO R MS TO EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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