Datasheet irf7341q Datasheet

PD - 94391A

IRF7341Q

Typical Applications

• Anti-lock Braking Systems (ABS)

• Electronic Fuel Injection

• Air bag

Benefits

• Advanced Process Technology

• Dual N-Channel MOSFET

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

• Automotive [Q101] Qualified

Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

HEXFET® Power MOSFET

V

DSS

55V 0.050@VGS = 10V 5.1A

1

S1

2

G1

3

S2

4

G2

Top View

R

max I

DS(on)

0.065@VGS = 4.5V 4.42A

8

D1

7

D1

6

D2

5

D2

SO-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.2 A I

DM

PD @TA = 25°C Maximum Power DissipationS 2.4 W PD @TA = 70°C Maximum Power DissipationS 1.7 W

Linear Derating Factor 16 mW/°C

V

GS

E

AS

I

AR

E

AR

TJ , T

STG

Drain-Source Voltage 55 V

Pulsed Drain CurrentQ 42

Gate-to-Source Voltage ± 20 V Single Pulse Avalanche EnergyR 140 mJ Avalanche CurrentQ 5.1 A Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient S 62.5 °C/W

www.irf.com 1

03/14/02

IRF7341Q

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– 0.043 0.050 VGS = 10V, ID = 5.1A R ––– 0.056 0.065 VGS = 4.5V, ID = 4.42A R

Ω

Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA Forward Transconductance 10.4 ––– ––– SVDS = 10V, ID = 5.2A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 2.0 VDS = 44V, VGS = 0V ––– ––– 25 VDS = 44V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– 29 44 ID = 5.2A Gate-to-Source Charge ––– 2.9 4.4 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– 7.3 11 VGS = 10V Turn-On Delay Time ––– 9.2 ––– VDD = 28V Rise Time ––– 7.7 ––– ID = 1.0A Turn-Off Delay Time ––– 31 ––– RG = 6.0Ω

ns

Fall Time ––– 12.5 ––– VGS = 10V R Input Capacitance ––– 780 ––– VGS = 0V Output Capacitance ––– 190 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 66 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode) Q p-n junction diode.

––– –––

––– ––– 42

2.4 A

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.6A, VGS = 0V R Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 2.6A Reverse Recovery Charge ––– 76 114 nC di/dt = 100A/µs

R

Notes:

Q Repetitive rating; pulse width limited by

S Surface mounted on FR-4 board, t

≤ 10sec.

max. junction temperature.

R Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF7341Q

100

10

2.7V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP 15.0V

10.0V

7.0V

5.5V

4.5V

4.0V

3.5V BOTTOM 2.7V

100

10

2.7V

1

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 175°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

5.2A

I =



D

VGS

TOP 15.0V

10.0V

7.0V

5.5V

4.5V

4.0V

3.5V BOTTOM 2.7V

°

T = 25 C



J

°

T = 175 C



J

10

D

I , Drain-to-Source Current (A)

V = 25V

DS



1

2.0 3.0 4.0 5.0 6.0 7.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

Vs. Temperature

www.irf.com 3

IRF7341Q

)

1400

1200

1000

800

600

C, Capacitance(pF)

400

200

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

SHORTED C

= C

rss

C

= C

oss

VDS, Drain-to-Source Voltage (V)

gd ds

+ C

Ciss

Coss

Crss

+ Cgd, C

gs

gd

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

°

T = 175 C



J

10

ds

20

I =

5.2A

D



16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

G

V = 44V

DS

V = 27V

DS



V = 11V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on



10us



°

T = 25 C



J

1

SD

I , Reverse Drain Current (A)

V = 0 V



0.1

0.2 0.5 0.8 1.1 1.4

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

10

D

I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

C

T T= 175 C



Single Pulse

0.1

0.1 1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100us



1ms



10ms

Forward Voltage

4 www.irf.com

IRF7341Q

(

)

6.0

5.0

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

10

thJA

Thermal Response (Z )

0.10

0.05

0.02

1

0.01 P

DM

SINGLE PULSE



0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

THERMAL RESPONSE

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

1 2

J DM thJA A

t



1

t

2

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7341Q

(

)

0.070

)

Ω

0.060

0.050

0.040

, Drain-to -Source On Resistance (

0.030

DS(on)

R

0.020

2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0

V

Gate -to -Source Voltage (V)

GS,

ID = 7.1A

Fig 11. Typical On-Resistance Vs.

Gate Voltage

Q

G

10 V

Q

GS

V

G

Q

GD

0.100

)

Ω

0.080

0.060 VGS = 4.5V

0.040

, Drain-to-Source On Resistance (

VGS = 10V

DS ( on )

R

0.020

0 102030405060

ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs.

Drain Current

400

320

I

TOP



BOTTOM

D

2.1A

4.3A

5.1A

Charge

240

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

160

80

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature

°

C

Fig 14. Maximum Avalanche Energy

Vs. Drain Current

6 www.irf.com

100

IRF7341Q

10

Allowed avalanche Current vs avalanche pulsewidth, tav

Duty Cycle = Single Pulse

0.01

1

assuming ∆Tj = 25°C due to avalanche losses

0.05

0.1

0.10

Avalanche Current (A)

0.01

0.001

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

140

TOP Single Pulse

120

100

80

60

, Avalanche Energy (mJ)

40

AR

E

20

0

25 50 75 100 125 150 175

BOTTOM 10% Duty Cycle ID = 5.1A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

∆∆

∆T/ Z

∆∆

thJC

Fig 16. Maximum Avalanche Energy

Vs. Temperature

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

I

av =

E

AS (AR)

∆∆

2

∆T/ [1.3·BV·Zth]

∆∆

= P

D (ave)·tav

www.irf.com 7

IRF7341Q

SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.2 5 (.01 0 ) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIM ENSION : INCH.

3. DIMENSION S A R E S HO W N IN MILLIME T ER S (INCH ES) .

4. OUT L IN E CON F ORMS TO J EDEC OU TLINE M S-0 1 2AA. DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 MO L D P RO T RU SIO N S N OT TO EXC EED 0 .2 5 ( .0 06). DIMENS IO NS IS T HE L EN GTH OF L E AD FOR SOLDER ING T O A SUB S TRATE..

6

B 8X

e1

A1

H

0.2 5 ( .0 1 0) M A M

A

0.10 (.004)

θ

L 8X

K x 45°

6

C 8X

IN CHE S M IL L IME TE RS

DIM

MIN MA X MIN M AX A .0532 .0688 1 .35 1.75 A1 .0040 .0098 0 .10 0.25 B .014 .018 0 .36 0.46 C .00 7 5 .00 9 8 0.1 9 0 . 2 5 D .18 9 .19 6 4.8 0 4 . 9 8 E .150 .157 3 .81 3.99 e .0 5 0 B AS IC 1 .27 BA S IC e1 .0 2 5 BAS IC 0 .635 BA SIC H .22 8 4 .24 4 0 5.8 0 6 . 2 0 K .011 .019 0 .28 0.48 L 0.16 .050 0.41 1.27

θ

0 ° 8 ° 0° 8 °

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.070) 8X

Part Marking

8 www.irf.com

(

)

(

)

Tape and Reel

TERMINAL NUMBER 1

.484

12.3

11.7 ( .461

IRF7341Q

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OU TLINE CON FORM S TO EIA-4 81 & EIA-541.

330. 00

12.992

MAX.

NOTES :

1. CO NTROLLING DIMENSION : MILLIMET ER.

2. OU TL INE CO N FO R M S T O E IA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Autyomotivr [Q101] market.

Qualification Standards can be found on IR’s Web site.

FEED DIRECTION

14.40 ( .5 6 6

12.40 ( .4 8 8

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/02

www.irf.com 9