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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD - 94225
IRF7331
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
20V 30@VGS = 4.5V 7.0A
45@VGS = 2.5V 5.6A
Ω)Ω)
Ω) I
Ω)Ω)
D
Description
These N-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
power MOSFETs from
S1
G1
S2
G2
1
2
3
4
8
D1
7
D1
6
D2
5
D2
and load management applications.
Top View
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 7.0
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.5 A
I
DM
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 28
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
W
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 62.5 °C/W
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IRF7331
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 30 VGS = 4.5V, ID = 7.0A
––– ––– 45 VGS = 2.5V, ID = 5.6A
mΩ
Gate Threshold Voltage 0.6 ––– 1.2 V VDS = VGS, ID = 250µA
Forward Transconductance 14 ––– –– – S VDS = 10V, ID = 7.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 13 20 ID = 7.0A
Gate-to-Source Charge ––– 3.7 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 2.1 ––– VGS = 4.5V
Turn-On Delay Time ––– 7.6 ––– VDD = 10V
Rise Time ––– 22 ––– ID = 1.0A
Turn-Off Delay Time ––– 110 ––– RG = 53Ω
ns
Fall Time ––– 50 ––– VGS = 4.5V
Input Capacitance ––– 1340 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = 16V
Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
2.0
28
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V
Reverse Recovery Time ––– 31 47 ns TJ = 25°C, IF = 2.0A
Reverse Recovery Charge ––– 15 23 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7331
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 25 C
V , Drain-to-Source Voltage (V)
DS
°
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
7.0A
°
T = 25 C
J
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 15V
DS
1
1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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IRF7331
2400
2000
1600
1200
800
C, Capacitance(pF)
400
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
8
I =
7.0A
D
V = 10V
DS
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
°
T = 150 C
J
1
°
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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IRF7331
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7331
)
0.05
Ω
0.04
0.03
ID = 7.0A
0.02
, Drain-to -Source On Resistance (
DS(on)
0.01
R
2.0 4.0 6.0 8.0
V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.12
Ω
0.10
0.08
0.06
V
= 2.5V
0.04
GS
, Drain-to-Source On Resistance (
0.02
V
DS (on)
R
0.00
GS
0 5 10 15 20 25 30
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
= 4.5V
Current Regulator
Same Type as D.U.T.
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
12V
V
GS
Fig 14b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T .
I
G
DS
-
I
D
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IRF7331
1.2
1.1
1.0
0.9
0.8
Gate threshold Voltage (V)
0.7
GS(th)
0.6
V
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
ID = 250µA
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
60
50
40
30
Power (W)
20
10
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7331
SO-8 Package Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONFORMS T O JE DE C OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBST RATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOT PRINT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF71 01 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIFIER
LOGO
8 www.irf.com
WW = WEEK
LOT CODE
PART NUMBER
Page 9
SO-8 Tape and Reel
TE R M IN AL NUM B E R 1
12.3 ( .484 )
11.7 ( .461 )
IRF7331
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIM ENSIONS ARE SHOWN IN MILLIM ETERS(INCHES).
3. OUT LINE CONFO RMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CO NTRO LLING DIMENSIO N : MILLIMETER.
2. OU TL INE CO N FO R M S TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/01
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