Page 1
● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Available in Tape & Reel
PD -94000
IRF7328
HEXFET® Power MOSFET
V
DSS
-30V 21mΩ@VGS = -10V -8.0A
R
DS(on)
max I
D
32mΩ@VGS = -4.5V -6.8A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1
G1
S2
G2
1
2
3
4
Top View
8
D1
7
D1
6
D2
5
D2
SO-8
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3 W
Linear Derating Factor 16 mW/°C
V
GS
TJ , T
STG
Drain-Source Voltage -30 V
Pulsed Drain Current -32
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
www.irf.com 1
10/04/00
Page 2
IRF7328
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 –– – –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.018 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 17 21 VGS = -10V, ID = -8.0A
––– 26.8 32 VGS = -4.5V, ID = -6.8A
mΩ
Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 12 ––– ––– S VDS = -10V, ID = -8.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 52 78 ID = -8.0A
Gate-to-Source Charge ––– 9.8 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 8.3 ––– VGS = -10V
Turn-On Delay Time ––– 13 20 VDD = -15V, VGS = -10.0V
Rise Time ––– 15 23 ID = -1.0A
Turn-Off Delay Time ––– 198 297 RG = 6.0Ω
ns
Fall Time ––– 98 147 RD = 15Ω
Input Capacitance ––– 2675 ––– VGS = 0V
Output Capacitance ––– 409 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 262 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-2.0
-32
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 36 54 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t
≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com
D
S
Page 3
IRF7328
100
10
1
, Drain-to-Source Current (A)
D
-I
-2.7V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP -10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
100
10
-2.7V
1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
-8.0A
I =
D
VGS
TOP -10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
1.5
°
T = 150 C
10
J
1.0
°
T = 25 C
GS
J
V = -15V
DS
20µs PULSE WIDTH
1
D
-I , Drain-to-Source Current (A)
0.1
2.0 3.0 4.0 5.0 6.0
-V , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-10V
Vs. Temperature
www.irf.com 3
Page 4
IRF7328
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
14
I =
-8A
D
V =-24V
12
10
8
6
4
GS
2
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
DS
V =-15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRF7328
10.0
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
100
thJA
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com 5
Page 6
IRF7328
0.060
)
Ω
0.050
0.040
0.030
0.020
, Drain-to -Source On Resistance (
0.010
DS(on)
R
0.000
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
ID = -8.0A
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.100
)
Ω
0.075
0.050
VGS = -4.5V
0.025
, Drain-to-Source On Resistance (
DS ( on )
R
0.000
0 10203040506070
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -10V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6 www.irf.com
Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.01 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSION S A R E S HO W N IN MILLIME T ERS (INC H ES ).
4. OUT L IN E CON F ORMS TO J EDEC OU TLINE M S-0 1 2AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PROTRU S IONS NOT TO EXC EE D 0.2 5 ( .0 06) .
DIMEN SIONS IS T HE L EN GTH O F LEA D FOR SOLDER ING T O A SUBS TRATE..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
K x 45°
θ
θ
6
L
8X
C
8X
IRF7328
IN CHE S M IL L IME TE RS
DIM
MIN MA X MIN MA X
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B AS IC 1 .27 BASIC
e1 .0 2 5 BAS IC 0 .635 B A SIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
www.irf.com 7
Page 8
IRF7328
Tape and Reel
TE R MIN AL NU M B E R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIM ENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUT LINE CONFO RMS TO E IA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CO N FO R M S TO EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8 www.irf.com
Loading...