Page 1
PD - 93763
IRF7326D2
1
2
3
4
Top View
MOSFET / Schottky Diode
8
K
7
K
6
D
5
D
V
= -30V
DSS
R
DS(on)
= 0.10Ω
Schottky Vf = 0.52V
SO-8
FETKY
● Co-packaged HEXFET
and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET
● Low V
● Generation 5 Technology
● SO-8 Footprint
Schottky Rectifier
F
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current ➃ -3.6 A
ID @ TA = 70°C -2.9
I
DM
PD @TA = 25°C Power Dissipation ➃ 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
®
Power MOSFET
A
A
S
G
Pulsed Drain Current ➀ -29
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Junction-to-Ambient ➃ 62.5 °C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ I
≤ -1.8A, di/dt ≤ -90A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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8/19/99
Page 2
IRF7326D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C
I
SM
Schottky Diode Electrical Specifications
Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C
Ct Max. Junction Capacitance 310 p F Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2 www.irf.com
Drain-to-Source Breakdown Voltage -30 — — V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance — 0.073 0.10 VGS = -10V, ID = -1.8A
— 0.13 0.16 VGS = -4.5V, ID = -1.5A
Ω
Gate Threshold Voltage -1.0 — — V VDS = VGS, ID = -250µA
Forward Transconductance 2.5 — — S VDS = -24V, ID = -1.8A
Drain-to-Source Leakage Current — — -1.0 VDS = -24V, VGS = 0V
— — -25 VDS = -24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage — — 100 VGS = -20V
Gate-to-Source Reverse Leakage — — -100 VGS = 20V
µA
nA
Total Gate Charge — — 25 ID = -1.8A
Gate-to-Source Charge — — 2.9 nC VDS = -24V
Gate-to-Drain ("Miller") Charge — — 9. 0 VGS = -10V (see figure 6) ➂
Turn-On Delay Time — 11 — VDD = -15V
Rise Time — 17 — ID = -1.8A
Turn-Off Delay Time — 25 — RG = 6.0Ω
ns
Fall Time — 18 — RD = 8.2Ω ➂
Input Capacitance — 440 — VGS = 0V
Output Capacitance — 200 — pF VDS = -25V
Reverse Transfer Capacitance — 93 — ƒ = 1.0MHz (see figure 5)
Continuous Source Current (Body Diode) — — -2.5 A
Pulsed Source Current (Body Diode) — — -29
Body Diode Forward Voltage — — -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
Reverse Recovery Time (Body Diode) — 53 80 ns TJ = 25°C, IF = -1.8A
Reverse Recovery Charge — 66 99 nC di/dt = 100A/µs ➂
Parameter Max. Units Conditions
A
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
0.77 If = 6.0, Tj = 25°C
V
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C .
mA
37 Tj = 125°C
Page 3
Power Mosfet Characteristics
A
A
)
A
)
)
A
IRF7326D2
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
D
-I , Drain-to -S ou rce C urre nt (A )
-4.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
D
-I , Drain -to-S o urc e Curren t (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 100
-V , Dra in -to -S o u rc e V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
2.0
I = -3.0A
D
T = 25°C
10
J
T = 150°C
J
1.5
1.0
(Normalized)
0.5
D
-I , Dra in-to -So u rce C urre nt (A )
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Dra in- to -Sou r ce On R esis ta n c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C
J
Fig 4. Normalized On-Resistance
V = -1 0 V
GS
Vs. Temperature
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Page 4
IRF7326D2
A
)
)
A
A
)
Power Mosfet Characteristics
1000
800
600
400
V = 0 V , f = 1M Hz
GS
C = C + C , C SHOR T E D
iss gs gd ds
C = C
rss gd
C = C + C
oss d s g d
C
iss
C
oss
C, Capacitance (pF)
200
0
1 10 100
C
rss
-V , Drain-to-Source Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = -3.0A
D
V = -24 V
DS
16
12
8
4
GS
-V , G a te -to -S o u rc e V o ltag e (V)
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , To ta l Gate Ch arge (nC
G
SEE FIGURE 12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150°C
J
T = 25°C
J
1
SD
-I , Reverse Drain Current (A)
0.1
0.0 0.3 0.6 0.9 1.2 1.5
-V , Source-to-Drain Voltage (V
SD
V = 0V
Fig 7. Typical Source-Drain Diode
GS
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
100
IRF7326D2
Power Mosfet Characteristics
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.50
( Ω )
0.40
0.30
0.14
( Ω )
0.12
VGS = -4.5V
0.20
0.10
DS (on)
0.00
R , Drain-to-Source On Resistance
0 2 4 6 8 10 12 14
-I , Drain Current (A)
D
VGS = -10V
Fig 10. Typical On-Resistance Vs. Drain
Current
0.10
ID = -3.6A
0.08
DS (on)
0.06
R , Drain-to-Source On Resistance
4 6 8 10 12 14 16
-V , Gate-to-Source Voltage (V)
GS
Fig 11. Typical On-Resistance Vs. Gate
Voltage
www.irf.com 5
Page 6
IRF7326D2
)
)
Schottky Diode Characteristics
100
10
F
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
100
T = 150 °C
10
(mA)
R
1
0.1
0.01
Reverse Current - I
0.001
0 5 10 15 20 25 30
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
160
140
120
100
80
60
D = 3/4
D = 1/2
40
D =1/3
D = 1/4
20
D = 1/5
Allowable Ambient Temperature - (°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forward Current - I (A
J
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - V (V)
R
Voltage
V = 80% Rated
r
R = 62.5° C /W
thJA
Square wave
A
DC
A
F(AV)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6 www.irf.com
Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIMENSIO NS ARE SH OWN IN MILL IMET ER S ( INCH ES).
4. OUTL IN E CONFORMS TO J EDEC OUT L INE MS-012AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D P ROTRU S IONS NOT TO EX C E ED 0.2 5 ( .0 06).
DIMENSION S IS T HE LEN GTH OF L EAD FOR S OLD E R IN G TO A SUBSTR ATE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7326D2
IN CHES MILL IME TERS
DIM
MIN MA X MIN MAX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .007 5 .00 9 8 0 .1 9 0 .25
D .189 .196 4.80 4 .98
E .150 .157 3 .81 3.99
e .0 5 0 BASIC 1 .27 BAS IC
e1 .02 5 BASIC 0 .635 BASIC
H .228 4 .24 4 0 5 .8 0 6 .20
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
(IRF7101 example )
312
INTERN ATIONA L
F7101
R EC TIF IER
LOGO
TOP
XXXX
WA FE R
LOT COD E
(LAST 4 DIGITS)
BOTTO M
www.irf.com 7
DATE CODE (YW W )
Y = LAST DIGIT OF THE YEAR
WW = WEEK
PART NUMBER
a
Page 8
IRF7326D2
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUTLINE CONFORM S TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING D IMENSION : MILLIMETER.
2. OU TLINE CONF ORM S TO E IA-481 & E IA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 8/99
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