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PD- 94094
IRF7325
HEXFET® Power MOSFET
● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Low Profile (<1.8mm)
● Available in Tape & Reel
Description
New P-Channel HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω) I
Ω)Ω)
-12V 24@VGS = -4.5V ±7.8A
33@VGS = -2.5V ±6.2A
49@VGS = -1.8V ±3.9A
S1
G1
S2
G2
1
2
3
4
Top View
8
D1
7
D1
6
D2
5
D2
SO-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -7.8
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -6.2 A
I
DM
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
V
GS
T
J, TSTG
Drain- Source Voltage -12 V
Pulsed Drain Current -39
W
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 8.0 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 62.5 °C/W
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IRF7325
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
V
GS(th)
g
fs
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
(BR)DSS
DS(on)
g
gs
gd
iss
oss
rss
Drain-to-Source Breakdown Voltage -12 ––– – –– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 24 VGS = -4.5V, ID = -7.8A
––– ––– 33 VGS = -2.5V, ID = -6.2A
mΩ
––– ––– 49 VGS = -1.8V, ID = -3.9A
Gate Threshold Voltage -0.40 ––– -0.90 V VDS = VGS, ID = -250µA
Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -7.8A
Drain-to-Source Leakage Current
––– ––– -1.0 VDS = -9.6V, VGS = 0V
µA
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
nA
Total Gate Charge ––– 22 33 ID = -7.8A
Gate-to-Source Charge ––– 5.0 7.5 nC VDS = -6.0V
Gate-to-Drain ("Miller") Charge ––– 4.7 7.0 VGS = -4.5V
Turn-On Delay Time ––– 9.4 ––– VDD = -6.0V
Rise Time ––– 9.8 ––– ID = -1.0A
ns
Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω
Fall Time ––– 180 ––– VGS = -4.5V
Input Capacitance ––– 2020 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 33 0 –– – ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
-2.0
––– ––– -39
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 36 54 n s TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 28 42 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7325
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10
100
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-7.8A
I =
D
1.5
10
1
D
-I , Drain-to-Source Current (A)
0.1
1.0 1.5 2.0 2.5 3.0
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = -10V
DS
20µs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
GS
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
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IRF7325
3000
2500
2000
1500
1000
C, Capacitance(pF)
500
0
Ciss
Coss
Crss
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
10
I =
-7.8A
D
GS
8
6
4
2
V =-9.6V
DS
V =-6V
DS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1
°
T = 25 C
SD
J
V = 0 V
GS
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
-V ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF7325
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7325
)
0.05
Ω
Ω)
0.08
0.04
0.03
ID = -7.8A
0.02
, Drain-to -Source On Resistance (
DS(on)
0.01
R
0.0 2.0 4.0 6.0 8.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.06
0.04
V
GS
= -1.8V
V
0.02
V
(on) , Drain-to-Source On Resistance (
DS
0
R
GS
2.0 4.0 6.0 8.0 10.0
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
= -2.5V
GS
= -4.5V
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF7325
1.0
0.8
ID = -250µA
0.6
Gate threshold Voltage (V)
GS(th)
-V
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
100
80
60
40
Power (W)
20
0
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7325
SO-8 Package Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFOR MS T O JE DE C OU T LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS ION S NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS ION S NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BAS IC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOT PRINT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIFIER
LOGO
8 www.irf.com
WW = WEEK
LOT CODE
PART NUMBER
Page 9
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7325
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : M ILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM ETERS(INCHES).
3. OU TLIN E C ON FORM S T O EIA-4 81 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONTRO LLING DIMEN SION : MILLIMET ER.
2. OU TL INE CO N FO R M S T O EIA-481 & EIA-541.
FEED DIRECTION
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/01
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