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PD- 91789
PRELIMINARY
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
A
A
S
G
FETKY
1
2
3
4
Top View
Description
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
TM
IRF7324D1
MOSFET / Schottky Diode
8
K
7
K
6
D
5
D
V
= -20V
DSS
R
DS(on)
= 0.18Ω
Schottky Vf = 0.39V
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
DM
PD @TA = 25°C Power Dissipation ➃ 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ -23
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ I
≤ -2.2A, di/dt ≤ -50A/µs, V
SD
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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Junction-to-Ambient ➃ 62.5 °C/W
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
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IRF7324D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-to-Source Breakdown Voltage -20 — — V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance — 0.070 0.180 VGS = -4.5V, ID = -2.9A
— 0.115 0.375 VGS = -2.7V, ID = -2.5A
Ω
Gate Threshold Voltage -0.70 — — V VDS = VGS, ID = -250µA
Forward Transconductance 4.0 — — S VDS = -16V, ID = -2.2A
Drain-to-Source Leakage Current — — -1.0 VDS = -16V, VGS = 0V
— — -25 VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — -100 VGS = -12V
Gate-to-Source Reverse Leakage — — 100 VGS = 12V
µA
nA
Total Gate Charge — 15 22 ID = -2.2A
Gate-to-Source Charge — 2.2 3.3 nC VDS = -16V
Gate-to-Drain ("Miller") Charge — 6.0 9.0 VGS = -4.5V (see figure 10) ➂
Turn-On Delay Time — 8.4 — VDD = -10V
Rise Time — 26 — ID = -2.2A
Turn-Off Delay Time — 51 — RG = 6.0Ω
ns
Fall Time — 33 — RD = 4.5Ω ➂
Input Capacitance — 610 — VGS = 0V
Output Capacitance — 310 — pF VDS = -15V
Reverse Transfer Capacitance — 170 — ƒ = 1.0MHz (see figure 9)
Continuous Source Current (Body Diode) — — -2.0 A
Pulsed Source Current (Body Diode) — — -23
Body Diode Forward Voltage — — -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time (Body Diode) — 43 65 n s TJ = 25°C, IF = -2.3A
Reverse Recovery Charge — 44 66 nC di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter Max. Units. Conditions
I
F(av)
Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.2 TA = 70°C
I
SM
Max. peak one cycle Non-repetitive 1 20 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
V
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
I
RM
C
t
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
Max. Reverse Leakage current 0.05 VR = 20V TJ = 25°C
mA
10 TJ = 125°C
Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
R
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Power Mosfet Characteristics
A
)
A
)
A
)
A
)
IRF7324D1
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
D
-I , Drain-to-Source Current (A)
-1.5 V
20µs PULS E WIDTH
T = 25°C
0.1
0.01 0.1 1 10 100
-V , Dr a in-to -So u rc e V o ltage (V
DS
100
J
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
D
-I , Drain-to-Source Current (A)
-1.5 V
20µs PULSE W IDTH
T = 150°C
0.1
0.01 0.1 1 10 10 0
-V , Dra in -t o-So u rc e V o ltage (V
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
100
10
J
T = 150°C
J
10
T = 150°C
J
T = 25°C
T = 25°C
1
D
-I , D rain -to-S o u rce Cu rre n t (A )
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V , Gate- to -S ou r ce V o ltage (V
GS
V = - 1 5 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1
SD
-I , R e v ers e D ra in C u rre n t (A )
0.1
0.3 0.6 0.9 1.2 1.5
-V , Source-to-Drain Voltage (V
SD
Fig 4. Typical Source-Drain Diode
Forward Voltage
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J
V = 0 V
GS
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IRF7324D1
A
)
A
A
)
A
)
Power Mosfet Characteristics
2.0
I = -3.6 A
D
1.5
1.0
(Normalized)
0.5
DS(on)
R , D ra in -to-So u rc e On R es is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem perature (°C
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.14
0.12
V = - 4 .5V
GS
0.10
0.09
VGS =-5.0V
0.08
0.07
0.06
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.05
0123
-I , Drain Current (A
D
Fig 6. Typical On-Resistance Vs. Drain
Current
100
O P E R A T IO N IN TH IS A R EA L IM IT E D
BY R
DS(on)
0.10
0.08
0.06
(on) , Drain-to-Source On Resistance (Ω)
DS
0.04
R
2468
Fig 7. Typical On-Resistance Vs. Gate
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I = -2.9 A
D
-V , Gate-t o- S o u rc e Voltage (V
GS
Voltage
10
1
D
-I , Drain Current (A)
T = 25 ° C
A
T = 100°C
J
Single Pulse
0.1
1 10 100
-V , Dr ain -to - S o ur c e V o ltage (V)
DS
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
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Power Mosfet Characteristics
A
g
g
g
A
IRF7324D1
1500
1000
500
C, Capacitance (pF)
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SHO RT E D
iss
C = C
C = C + C
C
iss
C
oss
C
rss
-V , Dr ain -to - S o ur c e V o ltage (V)
DS
s gd ds
rss
d
oss d s
d
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I = - 2 .2 A
D
V = -1 6V
DS
8
6
4
2
GS
-V , Ga te- to-Sourc e Voltag e (V)
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , To ta l Gate Ch a rge (nC)
G
SEE FIGURE 12
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
D = 0.50
thJA
10
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
0.1
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
2. Peak T = P x Z + T
1 2
J DM thJA A
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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t
1
t
2
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IRF7324D1
A
Schottky Diode Characteristics
10
100
10
T = 150°C
J
125°C
1
(mA)
R
0.1
100°C
75°C
50°C
0.01
F
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
Instantaneous Forward Current - I (A)
0.001
Reverse Current - I
0.0001
0 4 8 12 16 20
1000
T
25°C
Reverse Voltage - V (V)
R
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
A
T = 25°C
J
R
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V (V)
FM
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
100
Junction Capacitance - C (pF)
10
0 5 10 15 20
Reverse Voltage - V (V)
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TO LE RA N CING PE R A N SI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. O UT L INE CONF ORMS TO J EDEC OUT L INE MS-0 12 AA .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PR O TRU SIONS N O T TO E XCEE D 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7324D1
IN CHES MILLIME TE R S
DIM
M IN MAX MIN MAX
A .0 53 2 . 0 6 8 8 1 .35 1 .7 5
A1 .0 04 0 . 0 0 9 8 0 .10 0 .2 5
B .0 14 . 0 1 8 0 .36 0 .4 6
C .00 7 5 .0 0 98 0 .1 9 0 . 2 5
D .18 9 .1 9 6 4 .8 0 4 . 9 8
E .1 50 . 1 5 7 3 .81 3 .9 9
e .0 5 0 B AS IC 1 .27 BAS IC
e1 .0 2 5 B AS IC 0 .63 5 BAS IC
H .22 8 4 .2 4 40 5 .8 0 6 . 2 0
K .0 11 . 0 1 9 0 .28 0 .4 8
L 0 .1 6 . 0 5 0 0 .41 1 . 2 7
θ
0 ° 8 ° 0 ° 8 °
RECOMME NDED F OOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
(IRF7101 example )
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IRF7324D1
Tape and Reel
TERMINAL NUMBER 1
12 .3 ( . 4 8 4 )
11 .7 ( . 4 6 1 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice.
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