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● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Low Profile (<1.1mm)
● Available in Tape & Reel
● 2.5V Rated
S1
G1
S2
G2
PD -93799A
IRF7324
HEXFET® Power MOSFET
1
2
3
4
8
D1
7
D1
6
D2
5
D2
R
DS(on)
V
DSS
= -20V
= 0.018Ω
Description
Top View
New trench HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
SO-8
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -9.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -7.1 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3 W
Linear Derating Factor 16 mW/°C
V
GS
TJ , T
STG
Drain-Source Voltage -20 V
Pulsed Drain Current -71
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
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IRF7324
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.02 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.018 VGS = -4.5V, ID = -9.0A
––– ––– 0.026 VGS = -2.5V, ID = -7.7A
Ω
Gate Threshold Voltage -0.45 ––– -1.0 V VDS = VGS, ID = -250µA
Forward Transconductance 19 ––– ––– S VDS = -10V, ID = -9.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 42 63 ID = -9.0A
Gate-to-Source Charge ––– 7.1 11 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 12 18 VGS = -5.0V
Turn-On Delay Time ––– 17 ––– VDD = -10V
Rise Time ––– 36 ––– ID = -1.0A
Turn-Off Delay Time ––– 170 ––– RG = 6.0Ω
ns
Fall Time ––– 190 ––– RD = 10Ω
Input Capacitance ––– 2940 ––– VGS = 0V
Output Capacitance ––– 6 30 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 420 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-2.0
-71
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 300 450 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t
≤ 10sec.
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D
S
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IRF7324
1000
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
BOTTOM
-0.75V
-0.75V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
1
TOP
BOTTOM
VGS
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
-0.75V
-0.75V
0.1
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.01
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
-9.0A
1.5
1.0
10
°
T = 150 C
J
°
T = 25 C
J
(Normalized)
1
0.5
D
-I , Drain-to-Source Current (A)
V = -15V
DS
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7324
5000
4000
3000
2000
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
f = 1MHz
C
+ C
C
C
+ C
C
iss
C SHORTED
C, Capacitance (pF)
1000
0
1 10 100
-V , Drain-to-Source Voltage (V)
DS
C
oss
C
rss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
-9.0A
D
V =-16V
DS
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10us
100us
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7324
10.0
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
1 2
P
DM
t
1
t
2
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7324
)
0.025
Ω
0.020
ID = -9.0A
0.015
, Drain-to -Source On Resistance (
DS(on)
0.010
R
2.0 2.5 3.0 3.5 4.0 4.5
V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.10
Ω
0.08
0.06
0.04
V
= -2.5V
GS
, Drain-to-Source On Resistance (
0.02
DS (on)
R
0.00
0 102030405060
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
V
GS
= -4.5V
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
I
V
DS
+
D
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 ( .0 1 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C ONTR O L L ING DIM E N S IO N : IN C H .
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O UTL INE CO N F O RM S TO J E DEC OU T L IN E M S-0 1 2 A A .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O LD P R OT R U SIO NS NO T TO E X C E E D 0.2 5 (.0 0 6).
DIM E N S IO NS IS T H E LEN G T H O F LE A D F O R S O L D E RIN G T O A SU BS T R ATE ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7324
IN CH E S MILLIME TERS
DIM
M IN MAX MIN MAX
A .0 532 .0 688 1 .3 5 1 .7 5
A1 .0 040 .0 098 0 .1 0 0 .2 5
B .0 14 .0 18 0.36 0 .4 6
C .0 075 .0 0 9 8 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3.81 3 .9 9
e .0 5 0 BASIC 1 .2 7 BASIC
e1 .0 2 5 BASIC 0.63 5 BASIC
H .2 284 .2 4 4 0 5 .80 6 .2 0
K .0 11 .0 19 0.28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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IRF7324
Tape and Reel
TER M IN AL NU M B ER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIM ENSIONS ARE SHOW N IN M ILLIM ETERS(INCHES).
3. OUT LINE CONFORMS TO E IA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CO NTRO LLING DIMENSIO N : MILLIMETER.
2. OUTLINE CON F O RM S TO EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/00
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