Page 1
PD- 91705A
IRF7322D1
1
2
3
4
Top View
MOSFET / Schottky Diode
8
K
7
K
6
D
5
D
V
= -20V
DSS
R
DS(on)
= 0.058Ω
Schottky Vf = 0.39V
SO-8
FETKY
● Co-packaged HEXFET
and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET
● Low V
● Generation 5 Technology
● SO-8 Footprint
Schottky Rectifier
F
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.3 A
ID @ TA = 70°C -4.3
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
®
Power MOSFET
A
A
S
G
Pulsed Drain Current ➀ -43
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to +150 °C
Junction-to-Ambient ➃ 62.5 °C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ I
≤ -2.9A, di/dt ≤ -77A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7322D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-to-Source Breakdown Voltage -20 — — V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance — 0.049 0.062 VGS = -4.5V, ID = -2.9A
— 0.082 0.098 VGS = -2.7V, ID = -1.5A
Ω
Gate Threshold Voltage -0.70 — — V VDS = VGS, ID = -250µA
Forward Transconductance — 5.9 — S VDS = -10V, ID = -1.5A
Drain-to-Source Leakage Current — — -1.0 VDS = -16V, VGS = 0V
— — -25 VDS = -16V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage — — 100 VGS = -12.0V
Gate-to-Source Reverse Leakage — — -100 VGS = 12.0V
µA
nA
Total Gate Charge — 19 29 ID = -2.9A
Gate-to-Source Charge — 4.0 6.1 nC VDS = -16V
Gate-to-Drain ("Miller") Charge — 7.7 12 VGS = -4.5V (see figure 6) ➂
Turn-On Delay Time — 15 22 VDD = -10V
Rise Time — 40 60 ID = -2.9A
Turn-Off Delay Time — 42 63 RG = 6.0Ω
ns
Fall Time — 49 73 RD = 3.4Ω ➂
Input Capacitance — 780 — VGS = 0V
Output Capacitance — 470 — pF VDS = -15V
Reverse Transfer Capacitance — 240 — ƒ = 1.0MHz (see figure 5)
Continuous Source Current (Body Diode) — — -2.5 A
Pulsed Source Current (Body Diode) — — -21
Body Diode Forward Voltage — — -1.2 V TJ = 25°C, IS = -2.9A, VGS = 0V
Reverse Recovery Time (Body Diode) — 47 71 n s TJ = 25°C, IF = -2.9A
Reverse Recovery Charge — 49 73 nC di/dt = 100A/µs ➂
2
Schottky Diode Maximum Ratings
Parameter Max. Units. Conditions
I
I
F(av)
SM
Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
A
2 TA = 70°C
See Fig. 14
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
V
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
I
RM
C
t
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
mA
8 T
= 125°C
J
Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
R
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A
IRF7322D1
Power Mosfet Characteristics
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10
VGS
TOP
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM
-1.50V
-1.50V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-1.50V
1
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
2.0
I = -2.9 A
D
10
°
T = 25 C
J
°
T = 150 C
J
1.5
1.0
(Norm alized)
0.5
D
-I , Drain-to-Source Current (A)
V = -10V
DS
1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , D r ain -to- S ou r c e On Res i s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = -4 .5V
GS
Vs. Temperature
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IRF7322D1
A
)
A
)
Power Mosfet Characteristics
1400
1200
1000
800
600
C, Capacitance (pF)
400
200
0
1 10 100
V = 0V, f = 1MH z
GS
C = C + C , C S H O RT E D
is s gs gd d s
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , Dra in -to -S o u rc e V olt age (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
10
I = -2.9A
D
V = -16V
DS
GS
8
6
4
2
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 25 C
J
1
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
1ms
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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100
A
thJA
10
IRF7322D1
Power Mosfet Characteristics
0.50
0.20
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.8
0.6
0.4
V = -2.7V
GS
0.08
0.07
0.06
0.05
I = -5.3A
D
0.2
(on) , Drain-to-Source On Resistance (Ω)
DS
0.0
R
0 4 8 121620
-I , Drain Current (A)
D
V = -4.5V
GS
Fig 10. Typical On-Resistance Vs. Drain
Current
0.04
(on) , Drain-to-Source On Resistance (Ω)
0.03
DS
R
0.0 2.0 4.0 6.0 8.0
V , Gate-to-Source Voltage (V)
GS
Fig 11. Typical On-Resistance Vs. Gate
Voltage
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IRF7322D1
)
Schottky Diode Characteristics
10
100
10
T = 150°C
J
125°C
1
(mA)
R
0.1
0.01
F
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
Instantaneous Forward Current - I (A)
0.001
Reverse Current - I
0.0001
0 4 8 12 16 20
160
140
120
100
100°C
75°C
50°C
25°C
Reverse V oltage - V (V)
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
R
V = 20 V
r
R = 62.5°C/W
thJA
Square wave
A
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V (V)
Forward Voltage Drop - VF (V)
FM
Fig. 12 - Typical Forward Voltage Drop Characteristics
80
D = 3/4
D = 1/2
60
D =1/3
D = 1/4
40
D = 1/5
20
0
Allow able Ambient Tem perature - (°C)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Average Fo rw a rd C u rre nt - I (A
DC
F(AV)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
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Page 7
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.01 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENS ION S A RE S HOWN IN MILLIMETER S ( INC H ES ) .
4. OUT L IN E C ON F ORMS TO J ED EC OUTL IN E MS -012 AA .
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D PR OTRU S ION S N OT TO EXCE E D 0.25 ( .0 06).
DIMEN SIONS IS T HE L E NG T H O F LEA D F OR SO LDERING TO A S UBSTRAT E ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7322D1
IN CHE S M IL L IME T ER S
DIM
MIN MAX MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .00 7 5 .0 0 9 8 0 .1 9 0 . 2 5
D .18 9 .1 9 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B AS IC 1 .27 BA S IC
e1 .0 2 5 B AS IC 0 .635 BA SIC
H .22 8 4 .2 4 4 0 5 .8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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IRF7322D1
Tape and Reel
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OU TLINE CONFORMS TO EIA-481 & EIA-541.
TERMINAL NUMBER 1
8.1 ( .318 )
7.9 ( .312 )
12.3 ( .484 )
11.7 ( .461 )
FEED DIRE CTION
330.00
(12.992)
MA X.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CO NTRO LLING DIMENS ION : M ILLIMETER.
2. OU TLINE CON F ORM S T O E IA-481 & E IA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice . 3/99
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