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PD- 91667C
IRF7321D2
FETKY MOSFET & Schottky Diode
TM
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low V
l Generation 5 Technology
l SO-8 Footprint
Schottky Rectifier
F
1
A
2
A
3
S
4
G
8
K
V
= -30V
R
DS(on)
DSS
= 0.062Ω
7
K
6
D
5
D
Schottky Vf = 0.52V
Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.7 A
ID @ TA = 70°C -3.8
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ -38
Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Junction-to-Ambient ➃ 62.5 °C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
≤ -2.9A, di/dt ≤ -77A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7321D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25°C
I
SM
Schottky Diode Electrical Specifications
Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance
––– 0.042 0.062 VGS = -10V, ID = -4.9A
––– 0.076 0.098 VGS = -4.5V, ID = -3.6A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance ––– 7.7 ––– S VDS = -15V, ID = -4.9A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 55°C
µA
nA
Total Gate Charge ––– 23 34 ID = -4.9A
Gate-to-Source Charge ––– 3.8 5.7 nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 VGS = -10V, See Fig. 6
Turn-On Delay Time ––– 13 19 VDD = -15V
Rise Time ––– 13 20 ID = -1.0A
Turn-Off Delay Time ––– 34 51 RG = 6.0Ω
ns
Fall Time ––– 32 48 RD = 15Ω,
Input Capacitance ––– 710 ––– VGS = 0V
Output Capacitance ––– 380 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– -2.5
Pulsed Source Current (Body Diode) ––– ––– -30
A
Body Diode Forward Voltage ––– -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 44 66 n s TJ = 25°C, IF = -1.7A
Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs
Parameter Max. Units Conditions
A
2.0 See Fig.14 Tc = 70°C
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
0.77 I f = 6.0, Tj = 25°C
V
0.52 If = 3.0, Tj = 125°C
0.79 I f = 6.0, Tj = 125°C .
mA
37 Tj = 125°C
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A
A
A
Power Mosfet Characteristics
IRF7321D2
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
100
J
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
---4.9A
4.9A
I =
D
1.5
T = 25°C
J
T = 150°C
10
J
1.0
(Normalized)
0.5
D
-I , Drain-to-Source Current (A)
1
3.0 3.5 4.0 4.5 5.0 5.5 6.0
-V , Gate-to-Source Voltage (V)
GS
V = -10V
DS
20µs PULSE WIDTH
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
GS
°
-10V
10V
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRF7321D2
ge (V)
A
ge (V)
Power Mosfet Characteristics
1400
1200
1000
800
600
C, Capacitance (pF)
400
200
0
1 10 100
VGS = 0V f = 1 MHz
Ciss = Cgs + Cgd + Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C
iss
C
oss
C
rss
-
V , Drain-to-Source Volta
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =D-4.9A
V = -15V
DS
16
12
8
4
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
10
T = 25°C
J
SD
-I , Reverse Drain Current (A)
V = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4
-V , Source-to-Drain Volta
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
D
-I , Drain Current (A)I , Drain Current (A)
A
1
°
= 25 C
C
T T= 150 C
Single Pulse
1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
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100
A
A
thJA
10
IRF7321D2
Power Mosfet Characteristics
0.50
0.20
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.6
0.5
0.4
0.3
V = -4.5V
0.2
0.1
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.0
0 102030
GS
V = -10V
GS
-ID , Drain Current (A)
0.16
0.12
0.08
0.04
I = -4.9A
D
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.00
0 3 6 9 12 15
-VGS , Gate -to-Source Voltage (V)
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
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IRF7321D2
)
)
Schottky Diode Characteristics
100
10
F
T = 150°C
T = 125°C
T = 25°C
1
Instantaneous Forward Current - I (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V (V)
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
100
T = 150°C
J
10
125°C
100°C
(mA)
1
R
0.1
0.01
J
J
J
Reverse Current - I
0.001
0102030
75°C
50°C
25°C
Revers e Voltage - V (V)
R
A
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
FM
160
140
120
100
80
60
D = 3/4
D = 1/2
40
D =1/3
D = 1/4
20
D = 1/5
Allowable Ambient Temperature - (°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forwa rd Cur rent - I (A
V = 80% R a ted
r
R = 62.5° C/W
thJA
Square wave
DC
F(AV)
A
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.01 0 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS AR E SHO W N IN MILL IME T ER S ( IN CHES) .
4. OUTL INE C ON FO R M S TO J E DE C OUTL IN E M S-01 2AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D P ROT RU SION S N OT T O EX C EED 0 .2 5 (.0 06).
DIMENSIONS IS THE LE NG TH O F LE AD FOR SOLD ER ING TO A SUBSTRATE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IRF7321D2
IN CHES M IL L IME TERS
DIM
MIN MA X MIN M AX
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .007 5 .0 0 9 8 0 .1 9 0 . 2 5
D .189 .196 4.80 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .2 7 B A S IC
e1 .02 5 B ASIC 0 .635 BASIC
H .228 4 .2 4 4 0 5 .8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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IRF7321D2
Tape and Reel
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIM ETERS(INCHES).
3. OU TLINE CONFORMS TO EIA-481 & EIA-541.
TERMINAL NUMBER 1
8.1 ( .318 )
7.9 ( .312 )
12.3 ( .484 )
11.7 ( .461 )
FEED DIRE CTION
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CO NTRO LLING DIMENS ION : MILLIMETER.
2. OU TLINE CON FORM S T O E IA-481 & E IA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
http://www.irf.com/ Data and specifications subject to change without notice . 3/99
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