Datasheet irf7317 Datasheet

PD - 9.1568B

PRELIMINARY

l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.

S1

G1

S2

G2

HEXFET® Power MOSFET

N-CHANNEL MOSFET
1

2

3

4
P-CHANNEL MOSFET

Top View

IRF7317

8

D1

7

D1

6

5

V

D2

D2

R

SO-8

N-Ch P-Ch

20V -20V

DSS

0.029Ω 0.058Ω

DS(on)

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Symbol Maximum Units

N-Channel P-Channel

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current

TA = 25°C 6.6 -5.3

TA = 70°C 5.3 -4.3
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I

Maximum Power Dissipation 

TA = 25°C 2.0

TA = 70°C 1.3
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E

DS
GS

I

D

DM

S

P

D

AS

AR

AR

Peak Diode Recovery dv/dt  dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range T

J, TSTG

20 -20

± 12

26 -21

2.5 -2.5

100 150 mJ

4.1 -2.9 A

0.20 mJ

-55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units

Maximum Junction-to-Ambient  R

θJA

62.5

°C/W

V

A

W

12/9/97

IRF7317

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage
Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±12V
Total Gate Charge

Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 20 — — V
P-Ch -20 — — V
N-Ch — 0.027 — Reference to 25°C, I
P-Ch — 0.031 — Reference to 25°C, I

— 0.023 0.029 V

N-Ch

— 0.030 0.046 VGS = 2.7V, ID = 5.2A 
— 0.049 0.058 V

P-Ch

— 0.082 0.098 V

V/°C

N-Ch 0.7 — — V
P-Ch -0.7 — — V
N-Ch — 20 — V
P-Ch — 5.9 — VDS = -10V, ID = -1.5A 
N-Ch — — 1.0 V
P-Ch — — -1.0 V
N-Ch — — 5.0 V

µA

P-Ch — — -25 V
N-Ch — 1 8 27

P-Ch — 19 2 9
N-Ch — 2.2 3.3
P-Ch — 4.0 6.1

nC

N-Ch — 6.2 9.3
P-Ch — 7.7 12
N-Ch — 8.1 12
P-Ch — 15 2 2
N-Ch — 1 7 25
P-Ch — 40 6 0
N-Ch — 3 8 57

ns

P-Ch — 42 6 3
N-Ch — 3 1 47
P-Ch — 49 7 3
N-Ch — 90 0 —
P-Ch — 780 —
N-Ch — 43 0 — pF
P-Ch — 470 —
N-Ch — 20 0 —
P-Ch — 240 —

= 0V, ID = 250µA

GS

V

= 0V, ID = -250µA

GS

= 4.5V, ID = 6.0A 

GS

Ω

= -4.5V, ID = -2.9A 

GS

= -2.7V, ID = -1.5A 

GS

= VGS, ID = 250µA

DS

V

= VGS, ID = -250µA

DS

= 10V, ID = 6.0A 

DS

S

= 16V, VGS = 0V

DS

= -16V, VGS = 0V

DS

= 16V, VGS = 0V, TJ = 55°C

DS

= -16V, VGS = 0V, TJ = 55°C

DS

nA

N-Channel
I

= 6.0A, VDS = 10V, VGS = 4.5V

D

P-Channel
ID = -2.9A, VDS = -16V, VGS = -4.5V

N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,

= 10Ω

R

D

P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0Ω,
RD = 3.4Ω

N-Channel

= 0V, VDS = 15V, ƒ = 1.0MHz

V

GS

P-Channel
V

= 0V, VDS = -15V, ƒ = 1.0MHz

GS

= 1mA

D

= -1mA

D





Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

 N-Channel I

P-Channel I

 N-Channel Starting T

P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, I

≤ 4.1A, di/dt ≤ 92A/µs, V

SD

≤ -2.9A, di/dt ≤ -77A/µs, V

SD

= 25°C, L = 12mH RG = 25Ω, I

J

DD

DD

≤ V

≤ V

N-Ch — — 2.5
P-Ch — — -2.5
N-Ch — — 26
P-Ch — — -21
N-Ch — 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V 
P-Ch — -0.78 -1.0 T
N-Ch — 52 77
P-Ch — 47 71
N-Ch — 58 86
P-Ch — 49 73

, TJ ≤ 150°C

(BR)DSS

, TJ ≤ 150°C

(BR)DSS

= 4.1A. (See Figure 12)

AS

= -2.9A.

AS

A

V

= 25°C, IS = -2.9A, VGS = 0V 

J

N-Channel

ns

T

= 25°C, IF =1.7A, di/dt = 100A/µs

J

P-Channel 

nC

= 25°C, IF = -2.9A, di/dt = 100A/µs

T

J

 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 Surface mounted on FR-4 board, t ≤ 10sec.

N-Channel

IRF7317

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10

VGS

TOP

7.50V

4.50V

4.00V

3.50V

3.00V

2.70V

2.00V

BOTTOM

1.50V

1.50V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS

7.50V

4.50V

4.00V

3.50V

3.00V

2.70V

2.00V

1.50V

1.50V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

J

10

D

I , Drain-to-Source Current (A)

V = 10V

DS

1

1.5 2.0 2.5 3.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

T = 150 C

J

10

°

T = 25 C

SD

I , Reverse Drain Current (A)

1

0.4 0.6 0.8 1.0 1.2 1.4 1.6

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 4. Typical Source-Drain Diode

Forward Voltage

IRF7317

)

)

N-Channel

2.0

1.5

1.0

I =

D

6.0A

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 5. Normalized On-Resistance

Vs. Temperature

0.05

0.04

V =

GS

°

4.5V

0.032

V = 2.7 V

GS

0.028

0.024

(on) , Drain-to-Source On Resistance (Ω)

DS

R

0.020
0 102030

V = 4.5 V

GS

I , D rain C u rrent (A

D

A

Fig 6. Typical On-Resistance Vs. Drain

Current

300

250

200

TOP
BOTTOM

I

D

1.8A

3.3A

4.1A

0.03

I = 6.6A

D

0.02

(on) , Drain-to-Source On Resistance (Ω)

DS

R

0.01
02468

V , Ga te-to-Source Voltage (V

GS

Fig 7. Typical On-Resistance Vs. Gate

Voltage

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

A

0

25 50 75 100 125 150

Starting T , Junction Temperature( C)

J

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

°

N-Channel

A

)

IRF7317

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V = 0V, f = 1M Hz

GS

C = C + C , C SH OR T E D

iss g s gd d s

C = C

rss g d

C = C + C

oss d s g d

C

iss

C

oss

C

rss

V , D rain-to-Source V oltage (V)

DS

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

GS

I =D6.0A

8

6

4

2

V = 10V

DS

-V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

0.50

thJA

0.20

10

0.10

0.05

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7317

P-Channel

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10

VGS

TOP

-7.50V

-4.50V

-4.00V

-3.50V

-3.00V

-2.70V

-2.00V

BOTTOM

-1.50V

-1.50V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 12. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS

-7.50V

-4.50V

-4.00V

-3.50V

-3.00V

-2.70V

-2.00V

-1.50V

-1.50V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.1

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 13. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

J

10

D

-I , Drain-to-Source Current (A)

V = -10V

DS

1

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 14. Typical Transfer Characteristics

°

T = 150 C

J

10

°

T = 25 C

J

1

SD

-I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

A

A

IRF7317

2.0

I = -2 .9 A

D

1.5

1.0

(N o rma lize d )

0.5

DS(on)

R , D ra in -to -S o u rc e On R e s is tan c e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Tem pe rature (°C)

J

Fig 16. Normalized On-Resistance

Vs. Temperature

0.08

0.07

V = -4.5 V

GS

0.8

, Drain-to-Source On Resistance ( Ω )

DS(on)

R

0.6

0.4

0.2

0.0
048121620

-ID , Drain Current (A)

-I , Drain Current (A)

D

V = -2.7V

GS

V = -4.5V

GS

Fig 17. Typical On-Resistance Vs. Drain

Current

400

TOP

300

BOTTOM

I

D

-1.3A

-2.3A

-2.9A

0.06

I = -5.3A

D

, Drain-to-Source On Resistance ( Ω )

)

DS(on

R

0.05

0.04

0.03

0.0 2.0 4.0 6.0 8.0

V , G a t e - to - So u r c e Voltage (V)

GS

Fig 18. Typical On-Resistance Vs. Gate

Voltage

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

A

0

25 50 75 100 125 150

Starting T , Junction Temperature( C)

J

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

°

IRF7317

A

A

)

P-Channel

1400

1200

1000

800

600

C, Capacitance (pF)

400

200

0

1 10 100

V = 0V, f = 1M Hz

GS

C = C + C , C S H O RTED

iss g s g d d s

C = C

rss g d

C = C + C

oss d s g d

C

iss

C

oss

C

rss

-

-V , Drain-to-Source Voltage (V)

DS

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I = -2.9A

D

V = -16V

DS

GS

8

6

4

2

-V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

0.50

thJA

0.20

10

0.10

0.05

0.02

1

0.01

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec

1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Package Outline

SO8 Outline

D

5

- B -

8 7 6 5

5

E

- A ­1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004)

K x 45°

θ

6

L
8X

C
8X

IRF7317

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028 )
8X

6.46 ( .255 )

1.27 ( .050 )
3X

1.78 (.070)
8X

Part Marking Information

SO8

E X A MPL E : T HIS IS A N IR F 7 10 1

312
INTERNA TIONA L
R E CT IFIE R
L OGO

F7101

TOP

DATE CODE (YW W )
Y = LAST DIGIT OF THE YEAR
WW = WEEK

W A F ER

PART NUMBER

LOT CODE
(LAST 4 DIGITS)

XXXX

BOTTOM

IRF7317

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUM B ER 1

12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFOR MS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

NOTES :

1. CONTRO LLING DIMENSION : MILLIMETER.

2. OUTLINE CO NFOR M S T O EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 12/97