Datasheet irf7314q Datasheet

PD -93945A

IRF7314Q

HEXFET® Power MOSFET

Typical Applications

• Anti-lock Braking Systems (ABS)

• Electronic Fuel Injection

• Air bag

Benefits

• Advanced Process Technology

• Dual P-Channel MOSFET

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

• Automotive [Q101] Qualified

Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.

V

DSS

R

DS(on)

max I

-20V 0.058@VGS = -4.5V -5.2A

0.098@VGS = -2.7V -4.42A

S1

G1

S2

G2

1

2

3

4

8

D1

7

D1

6

D2

5

D2

SO-8

Top View

D

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -5.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -4.3 A
I

DM

PD @TA = 25°C Maximum Power DissipationS 2.4 W
PD @TA = 70°C Maximum Power DissipationS 1.7 W

Linear Derating Factor 16 mW/°C

V

GS

E

AS

I

AR

E

AR

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain CurrentQ -43

Gate-to-Source Voltage ± 12 V
Single Pulse Avalanche EnergyR 610 mJ
Avalanche CurrentQ -5.2 A
Repetitive Avalanche Energy See Fig.14, 15, 16 mJ
Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient S 62.5 °C/W

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03/20/02

IRF7314Q

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 0.049 0.058 VGS = -4.5V, ID = -5.2A R
––– 0.082 0.098 VGS = -2.7V, ID = -4.42A R

Ω

Gate Threshold Voltage -0.7 ––– ––– VVDS = VGS, ID = -250µA
Forward Transconductance 6.8 ––– ––– SVDS = 10V, ID = -5.2A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– 19 29 ID = -5.2A
Gate-to-Source Charge ––– 2.1 3.2 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 9.3 14 VGS = -4.5V
Turn-On Delay Time ––– 18 ––– VDD = -10V
Rise Time ––– 26 ––– ID = -1.0A
Turn-Off Delay Time ––– 41 ––– RG = 6.0Ω

ns

Fall Time ––– 38 ––– VGS = -4.5V R
Input Capacitance ––– 913 ––– VGS = 0V
Output Capacitance ––– 512 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 260 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) Q p-n junction diode.

––– –––

–––

–––

-3.0

-43

A

G

Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.0A, VGS = 0V R
Reverse Recovery Time ––– 44 66 ns TJ = 25°C, IF = -3.0A
Reverse Recovery Charge ––– 54 81 nC di/dt = -100A/µs

R

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature.

R Starting T

RG = 25Ω, I

= 25°C, L = 45mH

J

= -5.2A.

AS

S Surface mounted on FR-4 board, t

≤ 10sec.

T Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7314Q

100

10

1

-1.5V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

°

T = 25 C



J

VGS

TOP -7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V
BOTTOM -1.5V

100

10

1

, Drain-to-Source Current (A)

D

-I

-1.5V

20µs PULSE WIDTH
Tj = 175°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-5.2A

I =



D

VGS

TOP -7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V
BOTTOM -1.5V

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

-4.5V



GS

°

T = 175 C



10

1

D

-I , Drain-to-Source Current (A)

0.1

1.0 2.0 3.0 4.0 5.0

-V , Gate-to-Source Voltage (V)

GS

J

V = -15V

DS



20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

Vs. Temperature

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IRF7314Q

)

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,
C
C
C

C



C

iss



oss

C



rss

f = 1MHz

+ C
+ C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

-V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

°

T = 175 C



J

10

I =

-5.2A

D



8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 8 16 24 32 40

Q , Total Gate Charge (nC)

G

V =-16V

DS



Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED



BY R

DS(on

10

°

T = 25 C



J

1

SD

-I , Reverse Drain Current (A)

V = 0 V



0.1

0.2 0.5 0.8 1.1 1.4

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100



100us



10

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C



Single Pulse

1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

1ms



10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF7314Q

6.0

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

10

thJA

Thermal Response (Z )

0.10

0.05

0.02

1

0.01
P

DM

t

SINGLE PULSE

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A



1 2

1

t

2

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7314Q

(

)

0.080

)

Ω

0.070

0.060

ID = -5.2A

0.050

, Drain-to -Source On Resistance (

0.040

DS(on)

R

0.030

2.0 4.0 6.0 8.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 11. Typical On-Resistance Vs.

Gate Voltage

Q

G

10 V

Q

GS

V

G

Q

GD

0.430

)

Ω

0.330

VGS = -2.7V

0.230

0.130

, Drain-to-Source On Resistance (

VGS = -4.5V

DS ( on )

R

0.030
0 1020304050

-ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs.

Drain Current

1600

1200

I

TOP



BOTTOM

D

-2.1A

-4.4A

-5.2A

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

800

400

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature

C

°

Fig 14. Maximum Avalanche Energy

Vs. Drain Current

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100

IRF7314Q

10

Duty Cycle = Single Pulse

Allowed avalanche Current vs
avalanche pulsewidth, tav

0.01

assuming ∆Tj = 25°C due to
avalanche losses

1

0.05

0.10

- Avalanche Current (A)

0.1

0.01

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

700

TOP Single Pulse

600

500

400

300

, Avalanche Energy (mJ)

200

AR

E

100

0

25 50 75 100 125 150 175

BOTTOM 10% Duty Cycle
ID = -5.2A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T
every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT
not exceeded.

3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t
Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

D (ave)·tav

∆∆

∆T/ Z

∆∆

thJC

Fig 16. Maximum Avalanche Energy

Vs. Temperature

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

I

av =

E

AS (AR)

∆∆

2

∆T/ [1.3·BV·Zth]

∆∆

= P

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IRF7314Q

SO-8 Package Details

D B

A

87

6

E

e

6X

0.25 [.010] C A B

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: M ILLIMETER

3. DIMENSIONS ARE SHO WN IN MILLIMETERS [INCHES].

4. OUTLINE CO NFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

5

65

4312

e1

8X b

8X c

.0688
.0098
.020

.1968
.1574

.2440
.0196
.050

8°

MILLIMETERSINCHES

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 BASIC

5.80

6.20

0.25

0.50

0.40

1.27

0°

8°

DIM

MIN MAX

A

.0532

A1

.0040

b

.013

H

0.25 [.010]

A

A1

C

0.10 [.004]

A

θ

y

c .0075 .0098 0.19 0.25
D

.189

E

.1497
.050 BASIC

e

e1

.025 BASIC 0.635 BA SIC

H

.2284

K

.0099

L

.016

y

0°

K x 45°

8X L

7

FOOT PRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

8X 1.78 [.070]

Part Marking

8 www.irf.com

(

)

)

)

(

)

)

)

)

Tape and Reel

TERMINAL NUMBER 1

.484

12.3

11.7 ( .461

IRF7314Q

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENS ION : M ILLIMETER.

2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).

3. O UTLINE CO NFORMS TO EIA-481 & EIA-541.

330. 00

12.992

MAX.

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

FEED DIRECTION

14.40 ( .5 6 6

12.40 ( .4 8 8

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.03/02

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