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PD - 9.1480A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S1
G1
S2
G2
2
3
4
T o p V iew
IRF7313
HEXFET® Power MOSFET
81
D1
7
D1
6
D2
5
D2
SO-8
R
DS(on)
V
DSS
= 0.029Ω
= 30V
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I
Maximum Power Dissipation
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range T
dv/d t 5.8 V/ ns
TA = 25°C 6.5
TA = 70°C 5.2
TA = 25°C 2.0
TA = 70°C 1.3
DS
GS
I
D
DM
S
P
D
AS
AR
AR
J, TSTG
30
± 20
30
2.5
82 mJ
4.0 A
0.20 mJ
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
V
A
W
°C/W
8/25/97
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IRF7313
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 – – – – – – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.023 0.029 V
––– 0.032 0.046 V
Ω
= 10V, ID = 5.8A
GS
= 4.5V, ID = 4.7A
GS
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance ––– 14 ––– S VDS = 15V, ID = 5.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 1.0 V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 55°C
µA
nA
= 24V, VGS = 0V
DS
= 20V
GS
Total Gate Charge ––– 22 33 ID = 5.8A
Gate-to-Source Charge ––– 2.6 3.9 nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 6.4 9.6 VGS = 10V, See Fig. 10
Turn-On Delay Time ––– 8.1 12 VDD = 15V
Rise Time ––– 8.9 13 ID = 1.0A
Turn-Off Delay Time ––– 26 39 RG = 6.0Ω
ns
Fall Time ––– 17 26 RD = 15Ω
Input Capacitance ––– 650 ––– VGS = 0V
Output Capacitance ––– 320 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 130 – –– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 30
Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 1.7A
Reverse RecoveryCharge ––– 58 87 nC di/dt = 100A/µs
I
≤ 4.0A, di/dt ≤ 74A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 10mH
J
= 4.0A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2.5
D
A
DD
≤ V
(BR)DSS
,
G
S
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IRF7313
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
100
J
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
D
I , Drain-to-Source Current (A)
3.0V
20µs PULSE WIDTH
T = 150°C
A
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
VDS
100
T = 25°C
J
T = 150°C
J
10
D
I , Drain-to-Source Current (A)
1
3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Voltage (V)
GS
V = 10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
T = 150°C
10
SD
I , Reverse Drain Current (A)
A
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
J
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
SD
A
Fig 4. Typical Source-Drain Diode
Forward Voltage
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IRF7313
2.0
1.5
1.0
I =
D
5.8A
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.12
0.10
V =
GS
°
10V
0.040
V = 4.5V
GS
V = 10V
GS
I , Drain Current (A)
D
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.036
0.032
0.028
0.024
0.020
0 10203040
Fig 6. Typical On-Resistance Vs. Drain
Current
200
160
I
TOP 1.8A
3.2A
BOTTOM 4.0A
A
I
D
D
0.08
0.06
I = 5.8A
0.04
0.02
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.00
03691215
V , Gate-to-Source Voltage (V)
GS
D
Fig 7. Typical On-Resistance Vs. Gate
Voltage
120
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
A
0
25 50 75 100 125 150
Starting T , Junction Temperature (°C)
J
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
A
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IRF7313
1200
900
600
V = 0V , f = 1M H z
GS
C = C + C , C SH O RT ED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, C apac itance (pF)
300
0
1 10 100
C
rss
V , Drai n-to -Sourc e Voltag e ( V)
DS
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =D5.8A
V = 15V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
A
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.50
thJA
0.20
10
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7313
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
1.27 ( .050 )
3X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CT IFIE R
L OGO
F7 101
TOP
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AF E R
PART NUMBER
LOT CODE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 7
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERM INAL NU MBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7313
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTR OLL IN G DIMENSION : MILLIME TE R.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-4 81 & EIA-541.
330.00
(12.992)
MAX.
NOT ES :
1. CO NTROLLING DIME NS ION : MILLIMETER.
2. OUTLIN E CONFORM S TO EIA-481 & EIA-541.
FEED DIRE CTIO N
14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/ 97
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