Page 1
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S1
G1
S2
G2
1
2
3
4
Top View
PD - 91435C
IRF7311
HEXFET® Power MOSFET
8
D1
7
D1
6
D2
5
D2
SO-8
R
DS(on)
V
DSS
= 20V
= 0.029Ω
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I
Maximum Power Dissipation
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E
Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns
Junction and Storage Temperature Range T
TA = 25°C 6.6
TA = 70°C 5.3
TA = 25°C 2.0
TA = 70°C 1.3
DS
GS
I
D
DM
S
P
D
AS
AR
AR
J, TSTG
20
± 12
26
2.5
100 mJ
4.1 A
0.20 mJ
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
V
A
W
°C/W
5/29/01
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IRF7311
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.023 0.029 VGS = 4.5V, ID = 6.0A
––– 0.030 0.046 VGS = 2.7V, ID = 5.2A
Ω
Gate Threshold Voltage 0.7 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance ––– 20 – –– S VDS = 10V, ID = 6.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 10 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 5.0 VDS = 16V, VGS = 0V, TJ = 55°C
µA
nA
Total Gate Charge ––– 1 8 27 ID = 6.0A
Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 6. 2 9.3 VGS = 4.5V, See Fig. 10
Turn-On Delay Time ––– 8 .1 12 VDD = 10V
Rise Time ––– 17 25 ID = 1.0A
Turn-Off Delay Time ––– 38 57 RG = 6.0Ω
ns
Fall Time ––– 31 47 RD = 10Ω
Input Capacitance ––– 900 ––– VGS = 0V
Output Capacitance ––– 430 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 26
Diode Forward Voltage ––– 0.72 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time ––– 52 77 ns TJ = 25°C, IF = 1.7A
Reverse RecoveryCharge ––– 58 86 nC di/dt = 100A/µs
I
SD
TJ ≤ 150°C
= 25°C, L = 12mH
J
= 4.1A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
2.5
A
≤ 4.1A, di/dt ≤ 92A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
Page 3
IRF7311
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10
100
VGS
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM
1.50V
1.50V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10
VGS
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM
1.50V
1.50V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
100
°
T = 25 C
J
°
T = 150 C
J
10
D
I , Drain-to-Source Current (A)
V = 10V
DS
1
1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
10
°
T = 25 C
SD
I , Reverse Drain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 4. Typical Source-Drain Diode
Forward Voltage
Page 4
IRF7311
)
)
2.0
1.5
1.0
6.0A
I =
D
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.05
0.04
V =
4.5V
GS
°
0.032
V = 2.7 V
GS
0.028
0.024
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.020
0 102030
V = 4.5 V
GS
I , Drain Current (A
D
Fig 6. Typical On-Resistance Vs. Drain
Current
300
250
200
TOP
BOTTOM
I
D
1.8A
3.3A
4.1A
A
0.03
I = 6.6A
D
0.02
(on) , Drain-to-Source On Resistance (Ω)
DS
R
0.01
02468
V , G ate-to - Source Voltage (V
GS
A
Fig 7. Typical On-Resistance Vs. Gate
Voltage
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
°
Page 5
IRF7311
)
A
g
g
g
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V = 0V, f = 1M H z
GS
C = C + C , C S H O RTE D
C = C
C = C + C
C
iss
C
oss
C
rss
V , Drain -to -Sour c e V o ltage (V
DS
s gd d s
iss
rss
d
oss ds
d
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =D6.0A
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V = 10V
DS
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.50
thJA
0.20
10
0.10
0.05
0.02
1
0.01
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Page 6
IRF7311
SO-8 Package Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
y
3X 1.27 [.050]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOTPRINT
8X 0.72 [.028]
MILLIMET ERSINCH E S
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECT IF IER
LOGO
XXXX
F7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YW W
LOT CODE
PART NUMBER
Page 7
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7311
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIME NSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. O U TLIN E C O NFORM S T O EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONT ROLLING DIMENSION : MILLIM ETER.
2. OU TL INE CO N FO R MS TO E IA-481 & EIA-541.
FEED DIRECTION
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 5/01
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